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    PART MARKING STMICROELECTRONICS FLASH Search Results

    PART MARKING STMICROELECTRONICS FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    PART MARKING STMICROELECTRONICS FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C1B4

    Abstract: C1B4 20 microsd specification ipad mini
    Text: EMIF06-mSD01F2 IPAD Mini and micro SD Card - EMI filtering and 25 kV ESD protection Main application Mini and micro T-Flash Secure Digital memory card in mobile phones and communication systems Description The EMIF06-mSD01F2 is a highly integrated device based on IPAD technology with the


    Original     		EMIF06-mSD01F2 EMIF06-mSD01F2 C1B4 C1B4 20 microsd specification ipad mini PDF

    EMIF06-SD02F3

    Abstract: No abstract text available
    Text: EMIF06-SD02F3 IPAD 6 line EMI filter and ESD protection for SD card Data Brief Main application • Removable memory cards in mobile phones, communication systems, and portable applications ■ Compliant with: SD standard and high speed /MiniSD/ µSD and MMC/Trans-flash standards


    Original     		EMIF06-SD02F3 EMIF06-SD02F3 PDF

    c1b4

    Abstract: microsd specification EMIF06-MSD01F2 AN1235 AN1751 JESD97
    Text: EMIF06-mSD01F2 IPAD Mini and micro SD Card - EMI filtering and 25 kV ESD protection Main application Mini and micro T-Flash Secure Digital memory card in mobile phones and communication systems Description The EMIF06-mSD01F2 is a highly integrated device based on IPAD technology with the


    Original     		EMIF06-mSD01F2 EMIF06-mSD01F2 c1b4 microsd specification AN1235 AN1751 JESD97 PDF

    C1B4

    Abstract: No abstract text available
    Text: EMIF06-mSD01F2 IPAD Mini and micro SD Card - EMI filtering and 25 kV ESD protection Main application Mini and micro T-Flash Secure Digital memory card in mobile phones and communication systems Description The EMIF06-mSD01F2 is a highly integrated device based on IPAD technology with the


    Original     		EMIF06-mSD01F2 EMIF06-mSD01F2 C1B4 PDF

    uvision

    Abstract: uPSD3212 uPSD3200 uPSD3212C-40T6 uPSD3212CV-24T6 uPSD3212CV-24U6 uPSD3422 PSDSoft uPSD uPSD32
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPA-MIC/06/1938 Notification Date 07/18/2006 uPSD Memory Die Change for 64KB Flash Version of uPSD MIC - MICROCONTROLLERS 1/7 PCN MPA-MIC/06/1938 - Notification Date 07/18/2006 Table 1. Change Identification Product Identification


    Original     		MPA-MIC/06/1938 MPA-MIC/06/1938 uPSD3212 uPSD3312 uPSD3422 MPA-MIC/06/1574 uvision uPSD3200 uPSD3212C-40T6 uPSD3212CV-24T6 uPSD3212CV-24U6 PSDSoft uPSD uPSD32 PDF

    EMIF06-SD02F3

    Abstract: AN1751 AN2348
    Text: EMIF06-SD02F3 IPAD 6 line EMI filter and ESD protection for SD card Data Brief Main application • Removable memory cards in mobile phones, communication systems, and portable applications ■ Compliant with: SD standard and high speed /MiniSD/ µSD and MMC/Trans-flash standards


    Original     		EMIF06-SD02F3 EMIF06-SD02F3 AN1751 AN2348 PDF

    Flash Translation Layer

    Abstract: an1823 STMicroelectronics NAND256W3A NAND512-A AN1819 bad block NAND FLASH TRANSLATION LAYER FTL Part Marking STMicroelectronics flash memory AN1820 NAND01G-A
    Text: AN1819 APPLICATION NOTE Bad Block Management in NAND Flash Memories This Application Note explains how the Bad Block Management module of the Hardware Adaptation Layer HAL software, is used to recognize factory generated Bad Blocks and to manage Bad Blocks that develop during the lifetime of the NAND Flash device.


    Original     		AN1819 Flash Translation Layer an1823 STMicroelectronics NAND256W3A NAND512-A AN1819 bad block NAND FLASH TRANSLATION LAYER FTL Part Marking STMicroelectronics flash memory AN1820 NAND01G-A PDF

    bad block

    Abstract: RAM 2112 256 word st marking BBM code AN1819 bad marking FLASH TRANSLATION LAYER FTL Flash Translation Layer NAND04 NAND01G-B NAND128-A
    Text: AN1819 APPLICATION NOTE Bad Block Management in Single Level Cell NAND Flash Memories This Application Note explains how to recognize factory generated Bad Blocks, and to manage Bad Blocks that develop during the lifetime of the NAND Flash device. INTRODUCTION


    Original     		AN1819 bad block RAM 2112 256 word st marking BBM code AN1819 bad marking FLASH TRANSLATION LAYER FTL Flash Translation Layer NAND04 NAND01G-B NAND128-A PDF

    MLP8 2x3mm

    Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
    Text: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties


    Original     		SGEEFLASH/1204 MLP8 2x3mm MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16 PDF

    Marking STMicroelectronics m27c256

    Abstract: MK48T08 Part Marking STMicroelectronics flash memory marking E5 mk48t18 M27C256 m48t35 mil-std-883* lead fatigue report on PLCC ST24W04
    Text: QRR9801 QUALITY & RELIABILITY REPORT April 1997 to March 1998 - EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9801 Marking STMicroelectronics m27c256 MK48T08 Part Marking STMicroelectronics flash memory marking E5 mk48t18 M27C256 m48t35 mil-std-883* lead fatigue report on PLCC ST24W04 PDF

    FLASH TRANSLATION LAYER FTL

    Abstract: marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A
    Text: AN1820 APPLICATION NOTE How to Use the FTL and HAL Sotfware Modules to Manage Data in Single Level Cell NAND Flash Memories This Application Note gives an overview of the architecture of the Flash Translation Layer FTL and Hardware Adaptation Layer (HAL) software modules, which allow operating systems to read and write to NAND


    Original     		AN1820 FLASH TRANSLATION LAYER FTL marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A PDF

    MK48T08

    Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
    Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9802 MK48T08 mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64 PDF

    STM8 CPU programming manual

    Abstract: STM8AF6266 pm0044 STM8AF6226 PM0044 Programming manual i2c berr stm8 STM8AF6248 STM8A STM8AF612x Date Code Marking STM8
    Text: STM8AF622x/4x/66/68 STM8AF612x/4x/66/68 errata sheet Device limitations for STM8AFxxxx automotive MCUs featuring up to 32 Kbytes of Flash program memory Silicon identification This errata sheet applies to the STMicroelectronics STM8AF622x/4x, STM8AF6266/68,


    Original     		STM8AF622x/4x/66/68 STM8AF612x/4x/66/68 STM8AF622x/4x, STM8AF6266/68, STM8AF612x/4x, STM8AF6166/68 STM8AF622x/4x STM8AF6266/68 STM8AF612x/4x STM8AF6166/68 STM8 CPU programming manual STM8AF6266 pm0044 STM8AF6226 PM0044 Programming manual i2c berr stm8 STM8AF6248 STM8A STM8AF612x Date Code Marking STM8 PDF

    ST M27C256B PART MARKING

    Abstract: M29W080 QRR0003 stmicroelectronics datecode m27C256 Marking STMicroelectronics m27c256 m29w160 reliability report M29W160 QRR000 QRR0001 ST16
    Text: QRR0003 QUALITY & RELIABILITY REPORT October 1999 September 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR0003 ST M27C256B PART MARKING M29W080 QRR0003 stmicroelectronics datecode m27C256 Marking STMicroelectronics m27c256 m29w160 reliability report M29W160 QRR000 QRR0001 ST16 PDF

    BV-1

    Abstract: M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256
    Text: QRR9901 QUALITY & RELIABILITY REPORT April 1998 to March 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9901 BV-1 M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256 PDF

    Marking STMicroelectronics m27c256

    Abstract: M93C06 M27128A M2716 M2732A M2764A QRR9803 m29f002 CMOS E6DM CMOS F4S
    Text: QRR9803 QUALITY & RELIABILITY REPORT October 1997 to September 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9803 Marking STMicroelectronics m27c256 M93C06 M27128A M2716 M2732A M2764A QRR9803 m29f002 CMOS E6DM CMOS F4S PDF

    ram 2015

    Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
    Text: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9804 ram 2015 M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002 PDF

    M96S66

    Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
    Text: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9903 M96S66 tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903 PDF

    M27128

    Abstract: M2764A QRR9902
    Text: QRR9902 QUALITY & RELIABILITY REPORT July 1998 to June 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9902 M27128 M2764A QRR9902 PDF

    RM00016

    Abstract: STM8AF5288 STM8AF6286 pm0044 STM8AF6269 STM8 CPU programming manual i2c berr stm8 STM8AF62 STM8AF5268 STM8AF51A8
    Text: STM8AF51/52xx STM8AF6169/7x/8x/9x/Ax STM8AF6269/8x/Ax errata sheet Device limitations for STM8AFxxxx automotive MCUs featuring up to 128 Kbytes of Flash program memory Silicon identification This errata sheet applies to the STMicroelectronics STM8AF51xx, STM8AF52xx,


    Original     		STM8AF51/52xx STM8AF6169/7x/8x/9x/Ax STM8AF6269/8x/Ax STM8AF51xx, STM8AF52xx, STM8AF6169/7x/8x/9x/Ax, STM8AF51xx STM8AF52xx STM8AF6169/7x/8x/9x/Axy RM00016 STM8AF5288 STM8AF6286 pm0044 STM8AF6269 STM8 CPU programming manual i2c berr stm8 STM8AF62 STM8AF5268 STM8AF51A8 PDF

    Zeonex E48R

    Abstract: makrolon 2405 bayer makrolon 2405 noryl n110 Zeonex e48r BS308 phone 14 pin vga camera pinout bayer makrolon 2405 ir micron VGA
    Text: VS6552 VGA Color CMOS Image Sensor Module FEATURES • Small physical size ■ Ultra low power standby mode ■ SmOP Small Optical Package technology featuring integrated lens ■ Class leading low light performance ■ VGA resolution sensor ■ Compatible with STV0974 companion mobile


    Original     		VS6552 STV0974 STV0974 10-bit VS6552 Zeonex E48R makrolon 2405 bayer makrolon 2405 noryl n110 Zeonex e48r BS308 phone 14 pin vga camera pinout bayer makrolon 2405 ir micron VGA PDF

    QRR0001

    Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
    Text: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR0001 QRR0001 ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000 PDF

    25X25

    Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
    Text: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		QRR9904 25X25 Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320 PDF

    TS4973

    Abstract: TS4973IJT TSDC05IJT ohmeter Dynamic Measurements
    Text: TS4973 1.2W TWO AUDIO INPUTS WITH GAIN CONTROL POWER AMPLIFIER WITH STANDBY MODE ACTIVE LOW ADVANCE DATA • OPERATING FROM VCC = 2.8V to 5.5V ■ RAIL TO RAIL OUTPUT ■ 1.2W OUTPUT POWER @ Vcc=5V, THD=1%, PIN CONNECTIONS top view F=1kHz, with 8Ω Load


    Original     		TS4973 TS4973IJT 217Hz TS4973 400mW TSDC05IJT ohmeter Dynamic Measurements PDF