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    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS= -10 -0.6 -8 -6 -0.4 D= -4 -0.2 -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 GS- DS 100 50 80 f 70 30 50 40 20 iss 30 20 IB 10 oss 10 rss -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 D ZVN3310F MR G ABSOLUTE MAXIMUM RATINGS.


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    PDF ZVN3310F ZVP3310F -150mA -100V

    P-Channel FET 100v

    Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
    Text: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics


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    PDF ZVP3310F ZVN3310F -150mA P-Channel FET 100v PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331

    Untitled

    Abstract: No abstract text available
    Text: Product Specification - Nov. 28, 2002 V.03 Supersedes Date of Jul. 04, 2002 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.


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    PDF RC0603 RC0603 ynsc001 ynsc002 HBK073

    Untitled

    Abstract: No abstract text available
    Text: Product Specification - Jul. 07, 2003 V.05 Supersedes Date of Feb. 13, 2003 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.


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    PDF RC0603 RC0603 ynsc001 ynsc002 HBK073

    Untitled

    Abstract: No abstract text available
    Text: Product Specification - Feb. 13, 2003 V.04 Supersedes Date of Nov. 28, 2002 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.


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    PDF RC0603 RC0603 ynsc001 ynsc002 HBK073

    Untitled

    Abstract: No abstract text available
    Text: Product Specification – Sep 19, 2003 V.6 Supersedes Date of Jul. 07, 2003 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.


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    PDF RC0603 RC0603 ynsc001 ynsc002 HBK073

    KX18

    Abstract: IDT70V5378
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K 200MHz IDT70V5388/78 KX18 IDT70V5378

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K 200MHz IDT70V5388/78 70V5388 1152K 70V5378

    FourPortTM STATIC RAM 125 mhz

    Abstract: marking p4 a7
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K IDT70V5388/78 200MHz Glo00 70V5388 1152K 70V5378 FourPortTM STATIC RAM 125 mhz marking p4 a7

    IDT70V5378

    Abstract: No abstract text available
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K 200MHz IDT70V5388/78 IDT70V5378

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K 200MHz IDT70V5388/78

    FourPortTM STATIC RAM 125 mhz

    Abstract: 17mm
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K IDT70V5388/78 200MHz FourPortTM STATIC RAM 125 mhz 17mm

    FourPortTM STATIC RAM 125 mhz

    Abstract: A14P 12 nab 126 v1 70V5388S100
    Text: 3.3V 64K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF IDT70V5388 200MHz 272-ball BG272-1) 256-ball BG256-1) 70V5388 1152K FourPortTM STATIC RAM 125 mhz A14P 12 nab 126 v1 70V5388S100

    78s10

    Abstract: IDT70V5378 P1A13
    Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


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    PDF 64/32K 200MHz IDT70V5388/78 70V5388 1152K 70V5378 78s10 IDT70V5378 P1A13

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER 1995_— — — FEATURES * Extremely low equivalent on-resistance; RCE(Mrt) 44mil at 5A * 6 Amps continuous current (Up to 20 Amps peak)


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    PDF OT223 FZT968 44mil amtp25Â

    GNDBH 02

    Abstract: No abstract text available
    Text: U t Integrated Device Technology, Inc. HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.)


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    PDF IDT70V07S/L 25/35/55ns IDT70V07S 450mW IDT70V07L IDT70V07 IDT70V07S/L GNDBH 02

    Untitled

    Abstract: No abstract text available
    Text: BvNf fdt HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Military: 20/25/35/55ns max.)


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    PDF IDT7026S/L 20/25/35/55ns 15/20/25/35/55ns IDT7026S 750mW IDT7026L IDT7026 MIL-STD-883, 84-pin

    ral 7016

    Abstract: No abstract text available
    Text: «ID T HIGH-SPEED 1 6 K X 9 DUAL-PORT STATIC RAM Features ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20/25/35ns max. - Commercial: 12/!5/20/25/35ns (max.) * Low-power operation


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    PDF IDT7016S/L 20/25/35ns 5/20/25/35ns IDT7016S 750mW IDT7016L IDT7016 ral 7016

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT IDT70261S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial 25ns max.


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    PDF IDT70261S/L 15/20/25/35/55ns IDT70261S 750mW IDT70261L IDT70261 IDT70261S/L 100-pin PN100-1)

    AH81

    Abstract: RA15R DZ60
    Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT7008S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Military: 25/35/55ns max.


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    PDF IDT7008S/L 25/35/55ns 20/25/35/55ns IDT7008S 750mW IDT7008L IDT7008 MIL-STD-883, 100-pin AH81 RA15R DZ60

    Untitled

    Abstract: No abstract text available
    Text: ST n« HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT My IDT70261S/L integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial 25ns max.


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    PDF IDT70261S/L 15/20/25/35/55ns IDT70261S 750mW IDT70261L IDT70261 IDT70261S/L 100-pin PN100-1)

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


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    PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A