Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS= -10 -0.6 -8 -6 -0.4 D= -4 -0.2 -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 GS- DS 100 50 80 f 70 30 50 40 20 iss 30 20 IB 10 oss 10 rss -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 D ZVN3310F MR G ABSOLUTE MAXIMUM RATINGS.
|
Original
|
PDF
|
ZVN3310F
ZVP3310F
-150mA
-100V
|
P-Channel FET 100v
Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
Text: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics
|
Original
|
PDF
|
ZVP3310F
ZVN3310F
-150mA
P-Channel FET 100v
PARTMARKING mr
ZVP3310
zvp3310f
ZVN3310F
DSA0037411
zvp331
|
Untitled
Abstract: No abstract text available
Text: Product Specification - Nov. 28, 2002 V.03 Supersedes Date of Jul. 04, 2002 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.
|
Original
|
PDF
|
RC0603
RC0603
ynsc001
ynsc002
HBK073
|
Untitled
Abstract: No abstract text available
Text: Product Specification - Jul. 07, 2003 V.05 Supersedes Date of Feb. 13, 2003 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.
|
Original
|
PDF
|
RC0603
RC0603
ynsc001
ynsc002
HBK073
|
Untitled
Abstract: No abstract text available
Text: Product Specification - Feb. 13, 2003 V.04 Supersedes Date of Nov. 28, 2002 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.
|
Original
|
PDF
|
RC0603
RC0603
ynsc001
ynsc002
HBK073
|
Untitled
Abstract: No abstract text available
Text: Product Specification – Sep 19, 2003 V.6 Supersedes Date of Jul. 07, 2003 DATA SHEET CHIP RESISTORS RC0603 5%; 1% 2 Chip Resistor Surface Mount RC 7 0603 SERIES SCOPE This specification describes RC 0603 series chip resistors made by thick film process.
|
Original
|
PDF
|
RC0603
RC0603
ynsc001
ynsc002
HBK073
|
KX18
Abstract: IDT70V5378
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
200MHz
IDT70V5388/78
KX18
IDT70V5378
|
Untitled
Abstract: No abstract text available
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
200MHz
IDT70V5388/78
70V5388
1152K
70V5378
|
FourPortTM STATIC RAM 125 mhz
Abstract: marking p4 a7
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
IDT70V5388/78
200MHz
Glo00
70V5388
1152K
70V5378
FourPortTM STATIC RAM 125 mhz
marking p4 a7
|
IDT70V5378
Abstract: No abstract text available
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
200MHz
IDT70V5388/78
IDT70V5378
|
Untitled
Abstract: No abstract text available
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
200MHz
IDT70V5388/78
|
FourPortTM STATIC RAM 125 mhz
Abstract: 17mm
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
IDT70V5388/78
200MHz
FourPortTM STATIC RAM 125 mhz
17mm
|
FourPortTM STATIC RAM 125 mhz
Abstract: A14P 12 nab 126 v1 70V5388S100
Text: 3.3V 64K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
IDT70V5388
200MHz
272-ball
BG272-1)
256-ball
BG256-1)
70V5388
1152K
FourPortTM STATIC RAM 125 mhz
A14P
12 nab 126 v1
70V5388S100
|
78s10
Abstract: IDT70V5378 P1A13
Text: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation
|
Original
|
PDF
|
64/32K
200MHz
IDT70V5388/78
70V5388
1152K
70V5378
78s10
IDT70V5378
P1A13
|
|
|
Untitled
Abstract: No abstract text available
Text: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER 1995_— — — FEATURES * Extremely low equivalent on-resistance; RCE(Mrt) 44mil at 5A * 6 Amps continuous current (Up to 20 Amps peak)
|
OCR Scan
|
PDF
|
OT223
FZT968
44mil
amtp25Â
|
GNDBH 02
Abstract: No abstract text available
Text: U t Integrated Device Technology, Inc. HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.)
|
OCR Scan
|
PDF
|
IDT70V07S/L
25/35/55ns
IDT70V07S
450mW
IDT70V07L
IDT70V07
IDT70V07S/L
GNDBH 02
|
Untitled
Abstract: No abstract text available
Text: BvNf fdt HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Military: 20/25/35/55ns max.)
|
OCR Scan
|
PDF
|
IDT7026S/L
20/25/35/55ns
15/20/25/35/55ns
IDT7026S
750mW
IDT7026L
IDT7026
MIL-STD-883,
84-pin
|
ral 7016
Abstract: No abstract text available
Text: «ID T HIGH-SPEED 1 6 K X 9 DUAL-PORT STATIC RAM Features ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20/25/35ns max. - Commercial: 12/!5/20/25/35ns (max.) * Low-power operation
|
OCR Scan
|
PDF
|
IDT7016S/L
20/25/35ns
5/20/25/35ns
IDT7016S
750mW
IDT7016L
IDT7016
ral 7016
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT IDT70261S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Industrial 25ns max.
|
OCR Scan
|
PDF
|
IDT70261S/L
15/20/25/35/55ns
IDT70261S
750mW
IDT70261L
IDT70261
IDT70261S/L
100-pin
PN100-1)
|
AH81
Abstract: RA15R DZ60
Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT7008S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous reads of the same memory location • High-speed access — Military: 25/35/55ns max.
|
OCR Scan
|
PDF
|
IDT7008S/L
25/35/55ns
20/25/35/55ns
IDT7008S
750mW
IDT7008L
IDT7008
MIL-STD-883,
100-pin
AH81
RA15R
DZ60
|
Untitled
Abstract: No abstract text available
Text: ST n« HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT My IDT70261S/L integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Industrial 25ns max.
|
OCR Scan
|
PDF
|
IDT70261S/L
15/20/25/35/55ns
IDT70261S
750mW
IDT70261L
IDT70261
IDT70261S/L
100-pin
PN100-1)
|
WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
|
OCR Scan
|
PDF
|
RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
|