2sk170 FET
Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch
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2SK246
2SJ103
2SK117
2SK362
2SK363
2SK364
2SJ104
2SK30ATM
2SK170
2SJ74
2sk170 FET
Junction-FET
fet to92
2SK118
2SJ74
2sk879
2sj105
2SJ14
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ROHM QS6J1
Abstract: QS6J1
Text: QS6J1 Transistors 2.5V Drive Pch+Pch MOS FET QS6J1 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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Untitled
Abstract: No abstract text available
Text: QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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6AM14
Abstract: No abstract text available
Text: 6AM14 Silicon N Channel / P Channel Power MOS FET Array Application SP-12TA Hgh speed power switching 1 : Nch Source 2, 8, 9 : Nch Gate 3, 7,10 : Nch Drain : Pch Drain 4, 6,11 : Pch Gate 5, 12 : Pch Source Features • • • • Low on–resistance Low drive current
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6AM14
SP-12TA
6AM14
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).
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QS6J11
R0039A
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor Small switching −30V, −1A QS6U24 zFeatures 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: SP8J1FRA SP8J1 Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J1 SP8J1FRA zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark Each lead has same dimensions zApplications Power switching
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AEC-Q101
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Untitled
Abstract: No abstract text available
Text: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with
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QS5U28
QS5U28
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS5U27
Abstract: No abstract text available
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
QS5U27
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Untitled
Abstract: No abstract text available
Text: US6J2 Transistors 2.5V Drive Pch+Pch MOS FET US6J2 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. 1.7 (3) 0.77 1pin mark 0.2 (2) (1) 0.17 0.3 zInner circuit (6) (5) Package Taping Basic ordering unit (pieces) ∗2
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85Max.
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS5U27
Abstract: IR 240 FET
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
QS5U27
IR 240 FET
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QS5U23
Abstract: ONM10
Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a
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QS5U23
QS5U23
ONM10
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Untitled
Abstract: No abstract text available
Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a
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QS5U23
QS5U23
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Untitled
Abstract: No abstract text available
Text: QS5U27 QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
QS5U27
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rl86
Abstract: SP8J3
Text: SP8J3 Transistors 4V Drive Pch+Pch MOS FET SP8J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (100m: at 4.5V) 2) High Power Package. (PD=2.0W)
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Abstract: No abstract text available
Text: SP8J2FRA SP8J2 Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J2 SP8J2FRA zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (57mΩ at 4.5V)
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AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SP8J2 Transistors 4V Drive Pch+Pch MOS FET SP8J2 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (57m: at 4.5V) 2) High Power Package. (PD=2.0W)
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Abstract: No abstract text available
Text: QS5U23 QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a
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QS5U23
QS5U23
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SP8J5
Abstract: PD20W
Text: SP8J5 Transistors 4V Drive Pch+Pch MOS FET SP8J5 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (25mΩ at 4.5V) 2) High Power Package. (PD=2.0W)
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Abstract: No abstract text available
Text: SP8J5 Transistors 4V Drive Pch+Pch MOS FET SP8J5 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (25m: at 4.5V) 2) High Power Package. (PD=2.0W)
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Abstract: No abstract text available
Text: QS6U24 QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: SP8J3 Transistors 4V Drive Pch+Pch MOS FET SP8J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (100mΩ at 4.5V) 2) High Power Package. (PD=2.0W)
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