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    FC422N8

    Abstract: PCIH47F9300A1 PCIH47 FC120N2 FC114N2-1565 FC120N2-1565
    Text: Compact Power Connectors PCIM ORDERING INFORMATION Positronic Industries connectpositronic.com ORDERING INFORMATION - CODE NUMBERING SYSTEM Specify Complete Connector By Selecting An Option From Step 1 Through 7 1 2 EXAMPLE PCIM 34W13 3 4 5 6 7 8 F 93 A1 /AA


    Original     		PDF 34W13 30W15 30W15R 33W18 33W18R FC112N2S-1565 FC422N8 PCIH47F9300A1 PCIH47 FC120N2 FC114N2-1565 FC120N2-1565

    Untitled

    Abstract: No abstract text available
    Text: NEWS THE WORLD OF DC/DC-CONVERTERS www.peak-electronics.de Mai 2011 Die PCIM ist die führende internationale Fachmesse und Konferenz für Leistungselektronik, Intelligente Antriebstechnik und Power Quality. Neueste Entwicklungen aus Forschung und Industrie, bieten Lösungen für aktuelle Probleme der Branche. Die PCIM bietet Produkte und


    Original     		PDF D-55299 DE813096382

    IXAN0053

    Abstract: IXCP10M45S 48v regulator by lm317 4 to 20ma current source lm317 IXCP10M45 lm317 equivalent IC1 LM317 smps 1kW 48V 100w SMPS alternative for LM317
    Text: Semiconductor Current Regulators Protect Circuits IXAN0053 Sam Ochi, IXYS Corporation, Santa Clara, California This article originally appeared in PCIM Power Electronic Systems Magazine http://www.pcim.com and is copyrighted 2000 by Adams/Intertec International Inc. Reprinted here by permission.


    Original     		PDF IXAN0053 100pF. 100mA. IXAN0053 IXCP10M45S 48v regulator by lm317 4 to 20ma current source lm317 IXCP10M45 lm317 equivalent IC1 LM317 smps 1kW 48V 100w SMPS alternative for LM317

    PCIM

    Abstract: Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switchi trench TEOS oxide layer PCIM 177 Si4390DY Si4392DY Si7390DP Si7392DP trench ultra low power mosfet fast switching
    Text: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20-22, Nuremberg, Germany Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switching Performance. Jess Brown, Serge Jaunay and Mohamed Darwish


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    "thermal via" PCB D2PAK

    Abstract: JESD24-3 "thermal via" PCB D-PAK so8 pcb pattern double sided pcb, thermal via powersi so8 footprint AN-994 thermal PCB D2PAK IRF3706S
    Text: Evaluation of Power MOSFET Thermal Solutions for Desktop and Mobile Processor Power Tim McDonald and John Ambrus International Rectifier Corporation 233 Kansas Street El Segundo, CA 90245 USA Tmcdona1@irf.com, jambrus1@irf.com as presented at PCIM China, March 2002


    Original     		PDF HFPC2001 AN-994, JESD24-3, "thermal via" PCB D2PAK JESD24-3 "thermal via" PCB D-PAK so8 pcb pattern double sided pcb, thermal via powersi so8 footprint AN-994 thermal PCB D2PAK IRF3706S

    bi-directional switches FET

    Abstract: bi 370 transistor e Bi-Directional P-Channel mosfet Bi-Directional P-Channel bi 370 transistor cell phone schematics overcharge protection circuit diagram semiconductors bi 370 Lithium Battery Protection Circuit for Battery P Cell phone schematic circuit
    Text: Bi-directional FlipFET TM MOSFETs for Cell Phone Battery Protection Circuits As presented at PCIM 2001 Authors: *Mark Pavier, *Hazel Schofield, *Tim Sammon, *Aram Arzumanyan, *Ritu Sodhi, *Dan Kinzer * International Rectifier, Holland Road, Hurst Green, Surrey, RH8 9BB, UK


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    parallel connection of MOSFETs

    Abstract: No abstract text available
    Text: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England As Presented at PCIM 2001 Abstract This paper will present a new power semiconductor


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    gould shawmut fuse

    Abstract: Gould Shawmut Gould Shawmut fuses point of common coupling
    Text: Versions of this article appeared in Power Quality Magazine, Sep 1999 and PCIM Magazine Feb 2000 CURRENT-LIMITING FUSES IMPROVE POWER QUALITY by R. Wilkins Overdee, Rocky Lane Heswall, Wirral, CH60 0BZ, UK H.C.Cline Gould Shawmut, 374 Merrimac Street Newburyport, MA01950


    Original     		PDF MA01950 gould shawmut fuse Gould Shawmut Gould Shawmut fuses point of common coupling

    48v regulator by lm317

    Abstract: IXCP10M45S 4 to 20ma current source lm317 IXCP10M45 regulated power supply using Lm317 ac current regulator 48V 100w SMPS LM317* voltage regulator as current source IC1 LM317 smps 1kW
    Text: Semiconductor Current Regulators Protect Circuits Sam Ochi, IXYS Corporation, Santa Clara, California This article originally appeared in PCIM Power Electronic Systems Magazine http://www.pcim.com and is copyrighted 2000 by Adams/Intertec International Inc. Reprinted here by permission.


    Original     		PDF 100pF. 100mA. 48v regulator by lm317 IXCP10M45S 4 to 20ma current source lm317 IXCP10M45 regulated power supply using Lm317 ac current regulator 48V 100w SMPS LM317* voltage regulator as current source IC1 LM317 smps 1kW

    EN50178

    Abstract: eupec igbt EUPEC POWER SEMICONDUCTORS igbt eupec driver igbt eupec module igbt 2ED300C17-S eupec igbt driver Driver high side igbt 1200V
    Text: Press Release – May 2003 PCIM 2003 High Power IGBT Driver Solution offers high performance at full design flexibility. eupec is introducing the 2ED300C17-S, a member of the new EiceDRIVERTM family. May 2003, Warstein. This IGBT half bridge driver is designed to drive


    Original     		PDF 2ED300C17-S, 2ED300C17-S D-59581 EN50178 eupec igbt EUPEC POWER SEMICONDUCTORS igbt eupec driver igbt eupec module igbt eupec igbt driver Driver high side igbt 1200V

    APT9402

    Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
    Text: APPLICATION NOTE APT9402 By: Kenneth Dierberger UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETs AND AVALANCHE ENERGY RATED MOSFETs Presented at PCIM ‘94 DALLAS 1 UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETS AND AVALANCHE ENERGY RATED MOSFETS


    Original     		PDF APT9402 APT9402 amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE

    170M

    Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
    Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK


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    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original     		PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    written

    Abstract: XC4010E-PQ160 PQ160 PQ208 PQ240 TQ144 XC4000 XC4000E XC4010E XC4013E
    Text: LogiCore PCI Master and Slave Interface User's Guide November 1, 1996 Version 1.1 LC-DI-PCIM-C and LC-DI-PCIS-C Table of Contents LogiCore Facts 1. Introduction . 1 2. Getting Started . 3


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    Vector control of ac machines Peter Vas. Oxford

    Abstract: home made dc power inverter diagram synchronous reluctance motor three phase air-conditioner motor inverter inverter Controller PWM 1kw block diagram of air conditioner 230v digital inverter circuit designs DC inverter rotary compressor home made dc HIGH power inverter diagram IR2631
    Text: New iMOTION appliance-motor control mitigates growing energy crisis in China Toshio Takahashi Digital Control IC &Motion Power Module Design Center International Rectifier California, USA E-mail: ttakaha1@irf.com As presented at PCIM China 2006 Abstract— Estimates are that more than half of all


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    coreless transformer Technology

    Abstract: Eupec Power Semiconductors 2ED020I12FA coreless 2ED020I12-F igbt driver ic igbt eupec 2ed020i12 Eupec 2A mosfet igbt driver stage
    Text: Press Release – May 2003 PCIM 2003 New IGBT Driver IC for Blocking Voltages up to 1200V based on Coreless Transformer Technology By introducing the 2ED020I12F, a half bridge Driver IC, eupec offers a reliable and cost effective solution for driving IGBT


    Original     		PDF 2ED020I12F, P-D-SO20 VDE0884) 2ED020I12-F D-59581 coreless transformer Technology Eupec Power Semiconductors 2ED020I12FA coreless igbt driver ic igbt eupec 2ed020i12 Eupec 2A mosfet igbt driver stage

    PCB design for very fine pitch csp package

    Abstract: IRF6100 IRF6150
    Text: A New Generation of Wafer Level Packaged HEXFET  Devices by Tim Sammon, Hazel Schofield, Aram Arzumanyan, & Dan Kinzer, International Rectifier As presented at PCIM Europe 2000 Introduction & Summary International Rectifier has used a proprietary technique to position all the terminals of a HEXFET


    Original     		PDF ISPSD-99, PCB design for very fine pitch csp package IRF6100 IRF6150

    IGBT power loss

    Abstract: three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG
    Text: A New Low-Cost Flexible IGBT Inverter Power Module for Appliance Applications Mario Battello, Neeraj Keskar, Peter Wood, Mor Hezi, Alberto Guerra International Rectifier Appliance & Consumer Group, El Segundo CA as presented at PCIM China, March 2003 Abstract- Power modules for inverterized motor drive


    Original     		PDF AN1044 IGBT power loss three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG

    Si488DY

    Abstract: schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401
    Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany POINT OF LOAD CONVERTERS - The Topologies, Converters, and Switching Devices Required for Efficient Conversion Jess Brown, Vishay Siliconix, UK e -mail: jess.brown@vishay.com Abstract Point of load POL or point of use (POU)


    Original     		PDF Si9118/9 AN724, com/docs/70824/70824 com/docs/70875/70875 Si488DY schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401

    PCIM 177

    Abstract: mosfet cross reference schematic SMPS 12V 20A PCIM 96 AN607 Si4724CY Si4768CY Si4770CY PCIM 186 MOSFET Device Effects on Phase Node Ringing
    Text: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20 -22, Nuremberg, Germany Improving the performance of power MOSFETs by tailoring the driver to the specific MOSFET gate requirements. Jess Brown, Derek Koonce, Jasper Hou, Vishay Siliconix.


    Original     		PDF Si4770CY 500kHz AN607, PCIM 177 mosfet cross reference schematic SMPS 12V 20A PCIM 96 AN607 Si4724CY Si4768CY PCIM 186 MOSFET Device Effects on Phase Node Ringing

    mathcad rectifier

    Abstract: computer smps model mathcad computer smps circuit diagram mathcad buck INDUCTOR DESIGN spice simulation converter spice model mathcad file for Type III Stability Program for t sandler
    Text: High Accuracy Web Based Simulator for High Current Multi-phase DC-DC Converters D. Barsell and E. Wu International Rectifier El Segundo, CA 90245, USA as presented at PCIM China, March 2003 Abstract: With the evolutionary complexity of electronic circuits, reliance on computer-aided design


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    MOSFET VRM

    Abstract: IR140CSP IRF6604 100C IRF6607 back Tunnel diode DirectFet
    Text: DirectFETTM Power MOSFET Packaging Technology Enables Discrete Multiphase Converter Design Capable of up to 2MHz/phase Operation Ralph Monteiro, Carl Blake and Jason Chiu International Rectifier 233 Kansas Street, El Segundo, CA 90245 as presented at PCIM China, March 2003


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    ST P239

    Abstract: 714 p180 verilog code for pci express memory transaction P181 Japan P135 equivalent 714 p181 XC000E HQ240 XC4013EPQ160 XC4013
    Text: PCI Master Interface, PCI Slave Interface February, 1997 Product Description Features • Fully 2.1 PCI compliant 32 bit, 33MHz PCI Interface ◊ Master Initiator/Target , LC-DI-PCIM-C ◊ Slave (Target-only), LC-DI-PCIS-C PCI Master and Slave Interfaces V1.1.0


    Original     		PDF 33MHz XC000E ST P239 714 p180 verilog code for pci express memory transaction P181 Japan P135 equivalent 714 p181 HQ240 XC4013EPQ160 XC4013

    AEROVOX

    Abstract: EN32400 Aerovox RBPS power invertor failure analysis IGBT
    Text: Presented at PCIM Conference in Nürnberg, Germany, June 1996. 1996 IEEE. Reprinted, with permission, from Power Conversion, May 1996 Proceedings, p. 347-357. EXPANDING THE SAFE OPERATING AREA OF POLYPROPYLENE DIELECTRIC IGBT SNUBBER CAPACITORS Ralph M. Kerrigan


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