48 Ohms Resistors CGS
Abstract: PTF102003 600B microstrip resistor PCC103BCT
Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PTF102003
PTF102003
PCS6106TR
PCC103BCT
1/16W
48 Ohms Resistors CGS
600B
microstrip resistor
PCC103BCT
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LM7805 M SMD
Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
smd transistor marking l7
smd transistor marking C14
LM7805 smd
smd transistor marking l6
transistor smd marking ND
BCP56
LM7805
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LM7805 smd 8 pin
Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
smd transistor marking l7
SMD package marking ab l16
LM7805 smd
smd lm7805
transistor smd marking ND
BCP56
LM7805
smd transistor marking C14
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AT27280
Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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PTFA212002E
PTFA212002E
200-watt,
AT27280
variable capacitor ceramic 25pF
AT 0340 TEMEX
LM7805 05
LM7805 smd 8 pin
SMD CAPACITOR L27
smd transistor marking l6
LM7805
SMD TRANSISTOR MARKING 904
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200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211001E
PTFA211001E
100-watt,
H-30248-2
200B
BCP56
LM7805
infineon gold
P2KECT-ND
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ssy 1920
Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,
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PTFA191001E
PTFA191001F
PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
H-36248-2
ssy 1920
LM 2931 AT 05
BCP56
LM7805
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200B
Abstract: BCP56 LM7805 PTFA210451E infineon gold
Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210451E
PTFA210451E
45-watt,
200B
BCP56
LM7805
infineon gold
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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Untitled
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA210601E
PTFA210601F
60-watt,
H-30265-2
PTFA210601F*
H-31265-2
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A2103
Abstract: No abstract text available
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
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PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
A2103
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Untitled
Abstract: No abstract text available
Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and
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PTFA081501E
PTFA081501F
150-watt,
CDMA2000
PTFA081501F*
IS-95
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d 417 transistor
Abstract: No abstract text available
Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA211001E
PTFA211001F
100-watt,
PTFA211001F*
d 417 transistor
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PTFA072401FLV5XWSA1
Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the
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PTFA072401EL
PTFA072401FL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
PTFA072401FLV5XWSA1
VARIABLE RESISTOR 2K
LM7805
LTN 156
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A211801E
Abstract: 200B103 LM7805 PTFA211801E
Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA211801E
PTFA211801F
180-watt,
2140dangerous
A211801E
200B103
LM7805
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PTFA043002
Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
type 103 capacitor, 2kv RF, 1300 pf
marking us capacitor pf l1
BCP56
LM7805
300WPEP
P33K
TRANSISTOR 023 3010
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rogers
Abstract: No abstract text available
Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210451
PTF210451
rogers
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po111
Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They
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PTFA041501GL
PTFA041501HL
PTFA041501GL
PTFA041501HL
150-watt
PG-64248-2
IS-95
po111
3773 transistor voltage diagram
BCP56
LM7805
infineon gold
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diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
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PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
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roger
Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and
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PTF041501E
PTF041501F
150watt,
CDMA2000
H-30260-2
H-31260-2
roger
H-30260-2
LM7805
ceramic capacitor 103 z 21
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PTF141501E
Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital
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PTF141501E
PTF141501F
PTF141501E
150-watt,
PTF141501E*
PTF141501A
LM7805 smd
philips smd 1206 resistor
transistor smd marking ND
LM7805
smd lm7805
LM7805 M SMD
SCHEMATIC DIAGRAM 3.3kv
BCP56
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LM7805
Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260
Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211801E
PTFA211801E
180-watt,
H-36260-2
LM7805
A211801E
BCP56
R250
H-36260-2
infineon 6260
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smd capa
Abstract: p33k
Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PD21120R6
PD21120R6
PCS6106TR
PCC103BCT
1/16W
smd capa
p33k
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210451
Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210451
PTF210451
210451
smd marking f2
smd transistor marking l6
BDS31314
PTF210451E
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smd transistor marking l6
Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
Text: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180601
PTF180601
smd transistor marking l6
TRANSISTOR SMD 2X K
PCC103BCT
marking us capacitor pf l1
smd marking f2
PTF180601C
PTF180601E
32 z 45
SMD TRANSISTOR MARKING l4
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