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    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]


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    PDB-C116A PDB-C116A 100-PDB-C116A PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]


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    PDB-C116A 100-PDB-C116A PDF

    Photodiode cost sheet

    Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC


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    PDB-C116 PDB-C116 100-PDB-C116 Photodiode cost sheet die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount PDF

    InGaas PIN photodiode chip

    Abstract: datasheets for photodiode chips
    Text: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current


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    KIP-M25-1 KIP-M25-1 InGaas PIN photodiode chip datasheets for photodiode chips PDF

    InGaas PIN photodiode chip

    Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
    Text: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current


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    KIP-107-1 KIP-107-1 -40hange 250x250 InGaas PIN photodiode chip for photodiode chips pin InGaAs chip 1071 cp PDF

    KIP-M1M

    Abstract: InGaas PIN photodiode chip
    Text: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD


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    PDF

    InGaas PIN photodiode chip

    Abstract: for photodiode chips KIP-205-1
    Text: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current


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    KIP-205-1 KIP-205-1 250x250 InGaas PIN photodiode chip for photodiode chips PDF

    Untitled

    Abstract: No abstract text available
    Text: V ishay I ntertechnolog y, I nc . AND TEC I INNOVAT O L OGY Using Thin Film Substrates N HN DIODE SUBMOUNT CAPABILITIES O 19 62-2012 Resistors - Vishay Electro-Films LED Submounts INTRODUCTION Vishay Electro-Films, with its complete in-house capability, offers a wide variety of solutions for


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    9001/2000-registered VMN-PL0400-1204 PDF

    EPITAXX ETX 300

    Abstract: K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application
    Text: = — = = ETX 75CER-H/F ETX 300CER-H/F iPiTlIAA H ig h Speed InGaAs P hotodiodes Front Illuminated on Ceramic Submounts Fe a tu res •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current


    OCR Scan
    75CER-H/F 300CER-H/F 33bOMDb 0D0D358 75CER-F/H, 300CER-F/H 75CER-H, 300CER-H O-H-02 75CER-F EPITAXX ETX 300 K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application PDF

    EPITAXX ETX 300

    Abstract: InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40
    Text: E g = = = v v ETX 75CER-H/F ETX 300CER-H/F High Speed InGaAs Photodiodes Front Illuminated on Ceramic Submounts Features •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current ■Planar, passivated diode


    OCR Scan
    75CER-H/F 300CER-H/F 33b040b 75CER-F/H, 300CER-F/H 75CER-H, 300CER-H 75CER-F 300CER-F io-M-02 EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40 PDF

    XML-365-SD

    Abstract: No abstract text available
    Text: XML-365-SD TECHNICAL DATA UV LED Array, SMD XML-365-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm


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    XML-365-SD XML-365-SD 300mA, PDF

    XML-385-SD

    Abstract: No abstract text available
    Text: XML-385-SD TECHNICAL DATA UV LED Array, SMD XML-385-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm


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    XML-385-SD XML-385-SD 300mA, PDF

    XHL-375-SD

    Abstract: No abstract text available
    Text: XHL-375-SD TECHNICAL DATA UV LED Array, SMD XML-375-SD is a high power multi emitter LED, utilizing 4 high power LED chip dies on a ceramic SMD submount. It complies with RoHS directive. Specifications • • Structure: GaN Peak Wavelength: 375 - 380 nm Optical Output Power: typ. 95 mW


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    XHL-375-SD XML-375-SD XHL-375-SD PDF

    650nm 50mw

    Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
    Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits


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    ADE-508-011C HL8325G 650nm 50mw 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40 PDF

    OPR 12 PHOTOCELL

    Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
    Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In


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    ADE-408-001E HR1201CX OPR 12 PHOTOCELL photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed PDF

    TOLD2000MDA

    Abstract: laser diode toshiba 780nm laser diode toshiba 650 780nm laser diode 8 mW TOLD2000 laser diode DVD laser diode toshiba 650nm 5mw 5v laser 780nm laser diode TOLD
    Text: TOLD2000MDA TOSHIBA Two-wavelength Laser Diode InGaAlP/AlGaAs TOLD2000MDA Window Glassless Package Light Source for DVD-Player/DVD-ROM Unit: mm Optical output power: Po 7mW Operation temperature: Tc 10 to 70℃ Beam distance: 110 m optical center: 780-nm lasing point


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    OLD2000MDA 780-nm 650nm) 650/780nm) 780nm) 15-4A7 TOLD2000MDA laser diode toshiba 780nm laser diode toshiba 650 780nm laser diode 8 mW TOLD2000 laser diode DVD laser diode toshiba 650nm 5mw 5v laser 780nm laser diode TOLD PDF

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


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    ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G PDF

    High-Frequency Modulation IC for Laser Diode

    Abstract: TC9386FU
    Text: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car


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    OLD2003SDA Reve50 TC9386FU) TC9386FU High-Frequency Modulation IC for Laser Diode PDF

    RLD78MZM7

    Abstract: Rohm multibeam
    Text: Laser Diodes Datasheet 660nm / 780nm Dual Wavelength Lasers Part No. Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im ɵ⊥ ɵ// I TH Max. (mW) (V) (°


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    660nm 780nm R1102A RLD78MZM7 Rohm multibeam PDF

    RLD2WMFR1

    Abstract: TO 5.6mm package
    Text: RLD2WMFR1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm / Part No. 780nm Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im


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    660nm 780nm 780nm R1120A RLD2WMFR1 TO 5.6mm package PDF

    RLD65NZX2

    Abstract: No abstract text available
    Text: RLD65NZX2 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm / Part No. 780nm Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im


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    RLD65NZX2 660nm 780nm 780nm R1120A RLD65NZX2 PDF

    Untitled

    Abstract: No abstract text available
    Text: RLD65PZX3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm / Part No. 780nm Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im


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    RLD65PZX3 660nm 780nm 780nm R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RLD2WMFL3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm / Part No. 780nm Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im


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    660nm 780nm 780nm R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RLD2WMFL1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm / Part No. 780nm Wavelength λp (nm) Absolute maximum ratings (Tc=25° C) Electrical and optical characteristics (Tc=25° C) Po (mW) Topr PO VR Iop η Vop Im


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    660nm 780nm 780nm R1120A PDF