Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PD55008L Search Results

    SF Impression Pixel

    PD55008L Price and Stock

    STMicroelectronics PD55008L-E

    RF MOSFET LDMOS 12.5V POWERFLAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PD55008L-E Digi-Reel 1
    • 1 $9.39
    • 10 $9.39
    • 100 $9.39
    • 1000 $9.39
    • 10000 $9.39
    		Buy Now
    PD55008L-E Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $8.90617
    		Buy Now
    PD55008L-E Cut Tape 1
    • 1 $9.39
    • 10 $9.39
    • 100 $9.39
    • 1000 $9.39
    • 10000 $9.39
    		Buy Now

    PD55008L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD55008L STMicroelectronics RF Power Transistor Original PDF
    PD55008L STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD55008L-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF

    PD55008L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power 12v

    Abstract: No abstract text available
    Text: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1


    Original     		DB-55008L-960 PD55008L-E 960MHz DB-55008L-960 power 12v PDF

    Untitled

    Abstract: No abstract text available
    Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		DB-55008L-880 PD55008L DB-55008L-880 PD55008L PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PD55008L PD55008L PDF

    DB-55008L-470

    Abstract: PD55008L
    Text: DB-55008L-470 schematic 1+ 2- R2 B2 C3 C4 + B1 MSub FR4 H=60 mil C5 Vcc C1 D1 C2 R1 L1 C12 R3 C9 C10 TL5 C8 RFin TL1 C6 L2 TL2 TL3 TL4 LDMOS PD55008L TL6 C11 L3 C13 C7 RFout


    Original     		DB-55008L-470 PD55008L PD55008L PDF

    GRM42-6

    Abstract: 102J EEVHB1V100P EXCELDRC35C PD55008L-E
    Text: DB-55008L-235 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235 MHz ■ Supply voltage: 13.6 V ■ Output power: 12 W ■ Power gain: 15.2 ± 0.8 dB


    Original     		DB-55008L-235 PD55008L-E DB-55008L-235 GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E PDF

    PowerFLAT

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O


    Original     		PD55008L PD55008L PowerFLAT PDF

    1206 package resistor,1k resistor

    Abstract: philips smd 1206 resistor
    Text: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE


    Original     		DB-55008L-175 PD55008L DB-55008L-175 PD55008L 1206 package resistor,1k resistor philips smd 1206 resistor PDF

    GRM42-6X7R103

    Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
    Text: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor


    Original     		DB-55008L-450 PD55008L EXCELDRC35C 560JW 330JW 200JW 270JW 100JW GRM42-6C0G121J50 GRM42-6X7R103 ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v PDF

    102J

    Abstract: DB-55008L-960 EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L PD55008L-E
    Text: DB-55008L-960 Evaluation board using PD55008L-E for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 12 V ■ Output power: 7 W ■ Efficiency: 46 % - 55 % ■ Load mismatch: 20:1 ■ Beo free amplifier


    Original     		DB-55008L-960 PD55008L-E DB-55008L-960 PD55008L-E, 102J EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L PDF

    grm42-6 cog 101

    Abstract: GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E Diode smd L67 J747 J7-47 Philips BZX284C5V1
    Text: DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 225 - 318 MHz ■ Supply voltage: 13.6 V ■ Output power: 8 W ■ Power gain: 13.5 ± 0.7 dB


    Original     		DB-55008L-318 PD55008L-E DB-55008L-318 grm42-6 cog 101 GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E Diode smd L67 J747 J7-47 Philips BZX284C5V1 PDF

    3012S

    Abstract: J-STD-020B PD55008L 0949
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PD55008L PD55008L 3012S J-STD-020B 0949 PDF

    J-STD-020B

    Abstract: PD55008L 0951
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PD55008L PD55008L J-STD-020B 0951 PDF

    rf power amplifier circuit by 400-470mhz

    Abstract: DB-55008L-470 JESD97 PD55008L
    Text: DB-55008L-470 RF POWER amplifier using 1 x PD55008L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Power gain: 16.7 ± 2.0dB ■ Efficiency: 49% - 61%


    Original     		DB-55008L-470 PD55008L 470MHz DB-55008L-470 rf power amplifier circuit by 400-470mhz JESD97 PD55008L PDF

    104k x7r 50

    Abstract: murata COG capacitor 104K capacitor GRM42-6 COG cog 100 potentiometer resistor 102J GRM42-6 B2 Zener capacitor 104k x7r 50
    Text: DB-55008L-235 BOM Component ID B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD55008L-E Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor


    Original     		DB-55008L-235 PD55008L-E OD110 EXCELDRC35C GRM42-6 EEVHB1V100P 221JW 104k x7r 50 murata COG capacitor 104K capacitor GRM42-6 COG cog 100 potentiometer resistor 102J B2 Zener capacitor 104k x7r 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PD55008L PD55008L PDF

    JESD97

    Abstract: J-STD-020B PD55008L PD55008L-E
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


    Original     		PD55008L-E 500MHz 2002/95/EC PD55008L-E JESD97 J-STD-020B PD55008L PDF

    gp 429 pin smd diode

    Abstract: j353 j652 EXCELDRC35C PD55008L PD55008L-E J339 DB-55008L-450 MM1014
    Text: DB-55008L-450 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 318 - 450 MHz ■ Supply voltage: 13.6 V ■ Output power: 8 W ■ Power gain: 14.6 ± 0.6 dB


    Original     		DB-55008L-450 PD55008L-E DB-55008L-450 gp 429 pin smd diode j353 j652 EXCELDRC35C PD55008L PD55008L-E J339 MM1014 PDF

    820 pf ct Capacitor

    Abstract: zener diode 5.1 v 3214W-1-103E DB-55008L-880 EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50 PD55008L
    Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE 12.5 V OUTPUT POWER 7W POWER GAIN


    Original     		DB-55008L-880 PD55008L DB-55008L-880 820 pf ct Capacitor zener diode 5.1 v 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50 PD55008L PDF

    C17AH

    Abstract: GRM42-6C0G102J50 DB-55008L-175 EEVHB1V100P EXCELDRC35C PD55008L 1206 package resistor,1k resistor
    Text: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE


    Original     		DB-55008L-175 PD55008L DB-55008L-175 C17AH GRM42-6C0G102J50 EEVHB1V100P EXCELDRC35C PD55008L 1206 package resistor,1k resistor PDF

    DB-55008L-960

    Abstract: JESD97 PD55008L-E
    Text: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1


    Original     		DB-55008L-960 PD55008L-E 960MHz DB-55008L-960 JESD97 PD55008L-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


    Original     		PD55008L-E 500MHz 2002/95/EC PD55008L-E PDF

    DB-55008L-470

    Abstract: EXCELDRC35C GRM42-6C0G102J50 PD55008L PD55008L-E
    Text: DB-55008L-470 Evaluation board using PD55008L-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Power gain: 16.7 ± 2.0 dB ■ Efficiency: 49 % - 61 % ■ Load mismatch: 20:1


    Original     		DB-55008L-470 PD55008L-E DB-55008L-470 PD55008L-E, EXCELDRC35C GRM42-6C0G102J50 PD55008L PDF

    PD550

    Abstract: DB-55008L-960 PD55008L
    Text: DB-55008L-960 schematic 1+ MSub D1 FR4 H=60 mil B2 R1 C4 + C3 2- C5 B1 Vcc R2 C2 C1 L1 R3 TL4 LDMOS PD55008L RFin TL1 C6 TL2 C7 TL3 C8 TL5 C9 TL6 C11 C10 TL7 RFout


    Original     		DB-55008L-960 PD55008L PD550 PD55008L PDF

    DB-55008L-175

    Abstract: PD55008L
    Text: DB-55008L-175 schematic 1+ 2- B2 R3 D1 C3 C4 + B1 R2 C5 Vcc MSub C1 FR4 H=60 mil C2 L1 C10 R1 C9 TL4 C8 RFin TL1 C6 TL2 L2 TL3 LDMOS PD55008L L3 C11 TL5 C7 TL6 RFout


    Original     		DB-55008L-175 PD55008L PD55008L PDF