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    PD850 Price and Stock

    STMicroelectronics PD85035STR-E

    RF MOSFET LDMOS 13.6V PWRSO-10RF
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    DigiKey PD85035STR-E Reel 600 600
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    PD85035STR-E Cut Tape 600 1
    • 1 $33.54
    • 10 $25.221
    • 100 $20.7136
    • 1000 $19.965
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    PD85035STR-E Digi-Reel 600 1
    • 1 $33.54
    • 10 $25.221
    • 100 $20.7136
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    Avnet Americas PD85035STR-E Reel 23 Weeks 600
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    Mouser Electronics PD85035STR-E
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    Newark PD85035STR-E Reel 600
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    Avnet Silica PD85035STR-E 17 Weeks 600
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    STMicroelectronics PD85004

    RF MOSFET LDMOS 13.6V SOT89-3
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    DigiKey PD85004 Reel 2,500
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    PD85004 Cut Tape 1
    • 1 $3.95
    • 10 $3.95
    • 100 $3.95
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    PD85004 Digi-Reel 1
    • 1 $3.95
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    Newark PD85004 Cut Tape 1
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    STMicroelectronics PD85004 1
    • 1 $4.06
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    • 100 $3
    • 1000 $2.55
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    ComSIT USA PD85004
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    STMicroelectronics PD85035C

    RF MOSFET LDMOS 13.6V M243
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    DigiKey PD85035C Box
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    STMicroelectronics PD85035A-E

    RF MOSFET LDMOS 13.6V PWRSO-10RF
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    DigiKey PD85035A-E Tube
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    Avnet Americas PD85035A-E Bag 400
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    STMicroelectronics PD85015TR-E

    RF MOSFET LDMOS 13.6V PWRSO-10RF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PD85015TR-E Reel 600
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    • 1000 $13.20978
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    PD85015TR-E Cut Tape 1
    • 1 $19.13
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    PD85015TR-E Digi-Reel 1
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    Find more PD850 price and stock on Findchips.com

    PD850 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD-8500 OPTOWAY Technology GaAs PIN PD MODULES GaAs PIN PHOTODIODE WITH RECEPTACLE Original PDF
    PD85004 STMicroelectronics RF power transistor the LdmoST plastic family Original PDF
    PD85006-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS N-CH LDMOST PWRSO-10RF Original PDF
    PD85006L-E STMicroelectronics RF power transistor the LdmoST plastic family Original PDF
    PD85006TR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF LDMOST POWERSO-10RF Original PDF
    PD85015-E STMicroelectronics RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Original PDF
    PD85015-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF POWER LDMOST N-CH Original PDF
    PD85015S-E STMicroelectronics RF FETs, Discrete Semiconductor Products, IC RF PWR TRANSISTOR PWRSO-10RF Original PDF
    PD85015STR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD85015TR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD85025C STMicroelectronics RF power transistor - LdmoST family Original PDF
    PD85025C STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH LDMOST M243 Original PDF
    PD85025-E STMicroelectronics RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Original PDF
    PD85025-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF POWER LDMOST N-CH Original PDF
    PD85025S-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF POWER LDMOST N-CH Original PDF
    PD85025STR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD85025TR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD85035C STMicroelectronics RF power transistor - LdmoST family Original PDF
    PD85035C STMicroelectronics RF power transistor - LdmoST family Original PDF
    PD85035-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF

    PD850 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 56J pF

    Abstract: capacitor 4.7J GRM1885C1H8R2 DB-85004-340 EXCELDRC35C 3214W-1-103E EEVHB1V100P PD85004 TPSB155K035R2500 183j
    Text: DB-85004-340 Demonstration board based on the PD85004 for 2-way radio Preliminary data Features • Excellent thermal stability ■ Frequency: 290 - 340 MHz ■ Supply voltage: 13.6 V ■ Output power: 4 W ■ Power gain: 16.5 ± 0.5 dB ■ Efficiency: 51 % - 60 %


    Original     		PDF DB-85004-340 PD85004 DB-85004-340 PD85004, capacitor 56J pF capacitor 4.7J GRM1885C1H8R2 EXCELDRC35C 3214W-1-103E EEVHB1V100P TPSB155K035R2500 183j

    AS080447-33N

    Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 AS080447-33N l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85035S-E

    DB-85025-870

    Abstract: 74L74 B45196H3106K109 PD85025-E capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C
    Text: DB-85025-870 RF power amplifier demonstration board for UHF OFDM radio using PD85025-E Features • Excellent thermal stability ■ Frequency: 700 - 870 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 WPEP ■ Gain: 13.7 ± 0.5 dB ■ Efficiency: 40 % - 51 %


    Original     		PDF DB-85025-870 PD85025-E DB-85025-870 PD85025-E 74L74 B45196H3106K109 capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C

    Untitled

    Abstract: No abstract text available
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E

    GRM42-6 COG 221 J

    Abstract: PD85015-E DB-85015-940 grm42-6x7r PD85015 102J EEVHB1V100P EXCELDRC35C GRM42-6 GRM42-6 COG
    Text: DB-85015-940 RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 860 - 940 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 W ■ Power gain: 15.7 ± 0.4 dB ■ Efficiency: 60% - 62%


    Original     		PDF DB-85015-940 PD85015-E DB-85015-940 GRM42-6 COG 221 J PD85015-E grm42-6x7r PD85015 102J EEVHB1V100P EXCELDRC35C GRM42-6 GRM42-6 COG

    CAPACITOR 330 NF

    Abstract: PD85025-E ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J DB-85025-520 EEVHB1V100P EXCELDRC35C
    Text: DB-85025-520 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 19 ± 1 dB ■ Efficiency: 45 % - 52 % ■ Load mismatch: 20:1


    Original     		PDF DB-85025-520 PD85025-E DB-85025-520 CAPACITOR 330 NF ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J EEVHB1V100P EXCELDRC35C

    PD85015-E

    Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■


    Original     		PDF PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85025-E 2002/95/EC PowerSO-10RF PD85025-E

    PD85035C

    Abstract: 945 TRANSISTOR M243
    Text: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85035C 2002/95/EC PD85035C ID14138 945 TRANSISTOR M243

    NV SMD TRANSISTOR

    Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PDF PD85035-E PD85035S-E 870MHz 2002/93/EC PowerSO-10RF PD85035-E NV SMD TRANSISTOR PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E

    MA4P7436-1141T

    Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 MA4P7436-1141T AS080447-33N IA2410 AS120252-9R3N SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e

    capacitor

    Abstract: Philips Capacitor 27 PF CAPACITOR GRM39 22 pf capacitor l35 CAPacitor capacitor 60 pF GRM39-C0G3R3C50Z500 Murata CAPACITOR MURATA
    Text: DB-85006L-960 BOM Designator Manufacturer B1 B2 C1, C2 C3 C4 C5 C6, C14 C7 C8 C9 C10 C11 C12 C13 D1 L1 R1 R2 R3 TL1 TL2 TL3 TL4 TL5 TL6 RF in, RF out PD85006L Board Size Value Comment Part Code PANASONIC Ferrite Bead PANASONIC Ferrite Bead EXCELDRC35C EXCELDRC35C


    Original     		PDF DB-85006L-960 PD85006L EXCELDRC35C GRM39-C0G121J50D500 GRM39-X7R102K50C560 GRM39-X7R103K50C560 EEVHB1V100P GRM39-C0G390J50D500 GRM39-C0G3R3C50Z500 capacitor Philips Capacitor 27 PF CAPACITOR GRM39 22 pf capacitor l35 CAPacitor capacitor 60 pF GRM39-C0G3R3C50Z500 Murata CAPACITOR MURATA

    PD84002

    Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR
    Text: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85006L-E 2002/95/EC PD85006L-E PD84002 smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR

    945 TRANSISTOR

    Abstract: JESD97 M243 PD85025C
    Text: PD85025C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85025C 2002/95/EC PD85025C PD850and 945 TRANSISTOR JESD97 M243

    PD85004

    Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label
    Text: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD85004 2002/95/EC OT-89 PD85004 PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label

    PD85006L-E

    Abstract: DB-85006L-960 zener smd mark 751 J775-1 capacitor j4 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 PD85
    Text: DB-85006L-960 Evaluation board using PD85006L-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 13.6 V ■ Output power: 5 W ■ Power gain: 16.1 ± 0.1 dB ■ Efficiency: 58 % - 61 % ■ Load mismatch 20:1


    Original     		PDF DB-85006L-960 PD85006L-E DB-85006L-960 PD85006L-E zener smd mark 751 J775-1 capacitor j4 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 PD85

    ia2410

    Abstract: No abstract text available
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 ia2410

    PD85025s-e

    Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PDF PD85025-E PD85025S-E 870MHz 2002/93/EC PowerSO-10RF PD85025-E PD85025s-e NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B

    AN1294

    Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E AN1294 J-STD-020B PD85035S-E PD85035STR-E PD85035TR-E PD85035

    PD85004

    Abstract: PD85004 ST
    Text: STEVAL-TDR019V1 Demonstration board using the PD85004 for a 900 MHz 2-way radio Data brief Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 13.6 V ■ Output power: 4 W ■ Power gain: 17.4 ± 0.3 dB ■ Efficiency: 56 % - 65 %


    Original     		PDF STEVAL-TDR019V1 PD85004 STEVAL-TDR019V1 PD85004, PD85004 ST

    PD85006

    Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1

    schema

    Abstract: LDMOS PD850
    Text: DB -85006L -960 Schematic J G J1 — Ir7L4 Is LDMOS PD85006L ^ TL5 i H I 1 1 -r C11 ^ C14 i C12 l C13 RFout


    OCR Scan     		PDF -85006L PD85006Lï PD85006L schema LDMOS PD850

    PD85004

    Abstract: LDMOS DB-85004-960 PD850
    Text: DB-85004-960 Schematic LDM O S PD85004


    OCR Scan     		PDF DB-85004-960 PD85004 PD85004 LDMOS PD850