Untitled
Abstract: No abstract text available
Text: Caulkmaster 12 oz Semco Type Retainer KDS120R Product Details Catalog No. 102120 UPC Code 037103173478 Fits Tool s PG102120 Specification Size=12 oz./Semco 1 Packaging Industrial Bag Literature Caulkmaster_bro_55157.pdf Low Res. 102120_100.jpg Image High Res.
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KDS120R
PG102120
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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VP215
Abstract: HS350
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PG2012TB
IR260
VP215
WS260
HS350
PG10218JJ01V0DS
VP215
HS350
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HS350
Abstract: VP215 SW SPDT 6pin
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
HS350
VP215
SW SPDT 6pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TK
PG2012TK
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2008TK
PG2008TK
HS350
VP215
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SW SPDT 6pin
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2008TK
PG2008TK
SW SPDT 6pin
HS350
VP215
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NE38018 V68
Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
Text: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz
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NE38018
NE38018-T1
NE38018 V68
NE38018 s2p
NEC Ga FET marking L
HS350
NE38018
NE38018-T1
VP215
NEC 703
NEC K 2500
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2008TK
PG2008TK
HS350
VP215
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HS350
Abstract: VP215 uPG2012TK
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PG2012TK
IR260
VP215
WS260
HS350
PG10219JJ02V0DS
HS350
VP215
uPG2012TK
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NE38018 V68
Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SW SPDT 6pin
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TK
PG2012TK
SW SPDT 6pin
HS350
VP215
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PG2012TK-E2
Abstract: Marking g3h
Text: GaAs INTEGRATED CIRCUIT PG2012TK L-BAND SPDT SWITCH DESCRIPTION The PG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TK
PG2012TK
HS350
WS260
VP215
IR260
PG10219EJ01V0DS
PG2012TK-E2
Marking g3h
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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Original
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PG2012TK
PG2012TK
HS350
VP215
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PG2012TB
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2012TB L-BAND SPDT SWITCH DESCRIPTION The PG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
HS350
WS260
VP215
IR260
PG10218EJ01V0DS
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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pg2010
Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Text: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2010
PG1083
PG2020
PG2001
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API Electronics
Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Text: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS
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13A0077I
D043ST5
DD0007?
PG1018
PG1035,
PG1019
PG1020
PG1021
PG1022
API Electronics
PG1024
DD0007
PG1023
PG1035
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PG1018
Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Text: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN
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PG1018
PG1035,
PG1019
PG1020
PG1021
PG1022
PG1024
PG1025
PG1026
PG1030
PG1031
PG1035
PGI023
Pirgo Electronics
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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