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    PG107 Price and Stock

    Digi-Key DKS-PG10-75

    BOX ABS GRAY 2.6"L X 1.8"W
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    DigiKey DKS-PG10-75 Bulk 238 1
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    Fix Supply BULK-KPG-107

    316 SS Kammprofile Gasket with P
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    DigiKey BULK-KPG-107 Bulk 1
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    Rochester Electronics LLC REF02EP-G107

    5V VOLTAGE REFERENCE
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    DigiKey REF02EP-G107 Bulk 40
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    ITT Interconnect Solutions KPTC6PG10-7P-C-P9-MB

    CIRCULAR
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    Avnet Americas KPTC6PG10-7P-C-P9-MB Bulk 16 Weeks 500
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    Interstate Connecting Components KPTC6PG10-7P-C-P9-MB
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    Master Electronics KPTC6PG10-7P-C-P9-MB
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    Micron Technology Inc MT52L1G32D4PG-107-WT:B

    IC DRAM 32GBIT 933MHZ 178FBGA
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    DigiKey MT52L1G32D4PG-107-WT:B Tray 1,680
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    PG107 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PG107 Knox Semiconductor 70V Vrrm, 6.8pF Capacitance Varactor Diode Scan PDF
    PG107 MSI Electronics SUPER Q ABRUPT TUNING VARACTORS Scan PDF
    PG107 MSI Electronics 70V Vrrm, 6.8pF Capacitance Varactor Diode Scan PDF
    PG107 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    PG1070 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1070 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1071 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1071 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1072 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1072 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1073 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1073 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1074 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1074 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1075 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1075 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1076 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1076 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1077 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1077 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF

    PG107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


    Original     		PDF PG2159T6R PG2159T6R

    12-PIN

    Abstract: HS350
    Text: GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR BluetoothTM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.


    Original     		PDF PG2413T6M 11b/g PG2413T6M 12-pin HS350

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid

    NE3515S02

    Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260

    T6s MARKING

    Abstract: No abstract text available
    Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.


    Original     		PDF PG2253T6S PG2253T6S 16-pin PG10761EJ01V0DS T6s MARKING

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.


    Original     		PDF PG2409TB PG2409TB SC-88/SOT-363

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR Bluetooth TM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.


    Original     		PDF PG2413T6M 11b/g PG2413T6M 12-pin

    SN0608098-GP

    Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
    Text: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation


    Original     		PDF RS780 SB700 BCM5761E BCM5756M ICS9LPRS474AKLFT 4X801 07237-SB BQ24745RHDR-GP SN0608098-GP BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION TM The PG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.


    Original     		PDF PG2405T6Q PG2405T6Q 10-pin PG10753EJ02V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.


    Original     		PDF PG2405T6Q PG2405T6Q 10-pin

    high isolation SPDT

    Abstract: SW SPDT 6pin HS350 GaAs MMIC SPDT Switch SOT-363 mmic 26 SPDT SOT363
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    R5775K

    Abstract: SV430 a476 AM 5888 nec microcomputer dielectric resonator KYOCERA EC-NE3509M04
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 R5775K SV430 a476 AM 5888 nec microcomputer dielectric resonator KYOCERA EC-NE3509M04

    HS350

    Abstract: GaAs MMIC SPDT Switch SOT-363 mmic 26 SPDT SOT363
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HS350

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PG2251T6M PG10783JJ01V0DS IR260 HS350 HS350

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The PG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies


    Original     		PDF PG2415T6X PG2415T6X PG10797EJ01V0DS

    Untitled

    Abstract: No abstract text available
    Text: ABRUPT TUNING VARACTORS SUPER Q S ER IES PG107 - PG347 PC 107 - PC 141 Th e PG and PC series voltage variable capacitance diodes feature planar relia­ b ility, high Q , high voltage types with controlled tuning ratios for electronic tuning and harm onic generator applications. They are packaged in J E D E C


    OCR Scan     		PDF PG107 PG347 DO-14 IL-S-19500 PC112 PC117

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG107B S-BAND SPDT SWITCH DESCRIPTION The /¿PG107B is a S-Band SPDT Single Pole Double Throw switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It is housed in a 8 pin ceram ic flat package that is easy to install and


    OCR Scan     		PDF //PG107B PG107B

    PC114

    Abstract: PC112 DO-14 pc-115 pc137
    Text: ABRUPT TUNING VARACTORS SUPER Q SERIES PG107 - PG347 PC 107 PC 141 The PG and PC series voltage variable capacitance diodes feature planar relia­ b ility , high Q, high voltage types w ith controlled tuning ratios fo r electronic tuning and harmonic generator applications. They are packaged in JEOEC


    OCR Scan     		PDF PG107 PG347 PC139 PC140 PC112 PC115 PC125 PC126 PC113 PC116 PC114 DO-14 pc-115 pc137

    PG107

    Abstract: PG110 PG115 PG122 PG207 PG210 PG215 PG307 PG310 PG315
    Text: 5238534 KNOX S E M I C O N D U C T O R INC Tr , J 99D 00139 DE | S 2 3 f l S 3 4 Varactor Dtodes • D D D 0 D 1 3 C1 3 T " * 0 7 “/ ? ■ ULTRA Hi-Q Type Number 1 MHz pF PG107 PG207 PG307 PG110 PG210 PG310 PG115 PG215 PG315 PG122 PG222 PG322 PG133 PG233


    OCR Scan     		PDF Fls23flS34 2V10MWV PG107 PG207 PG307 PG110 PG210 PG310 PG115 PG215 PG122 PG315

    Untitled

    Abstract: No abstract text available
    Text: RflSG electronics Q IID C D fl au rcn u tn c ABRUPT TUNING SERIES PG107 - PG347 varactors The PG and PC series voltage variable capacitance diodes feature planar relia­ b ility , high Q, high voltage types w ith controlled tuning ratios fo r electronic tuning and harm onic generator applications. They are packaged in JED EC


    OCR Scan     		PDF PG107 PG347 DO-14 QD435T2 0DGG442

    UPG107B

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG107B S-BAND SPDT SWITCH DESCRIPTION The //PG107B is a S-Band SPDT Single Pole Double Throw switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It is housed in a 8 pin ceram ic flat package that is easy to install and


    OCR Scan     		PDF uPG107B

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    v2308

    Abstract: EP1014 V2205
    Text: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .


    OCR Scan     		PDF 1N4786 1N5139 1485A 1N5441A 1N5461A 1N5461 1N5710A V1652 V1720 SQ131 v2308 EP1014 V2205

    pg2010

    Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
    Text: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2010 PG1083 PG2020 PG2001