2CDS200912R0001
Abstract: 2CTB815101R0700 2CTB815101R1600 2CTB803853R2400 for OVR T1 1N 25 255 TS DC 24V double POLE MCB 2CTB803853R5600 for OVR T2 1N 40 275 P TS earthing calculation for commercial building 2CTB815101R8900
Text: Surge Protection Devices OVR Range, System pro M compact OVR PLUS N1 40 No upstream MCB or fuse required NEW OVR Range, System pro M compact ® Summary General points on lightning and its risks Causes of transient overvoltages . 2
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B0202
2CDS200912R0001
2CTB815101R0700
2CTB815101R1600
2CTB803853R2400
for OVR T1 1N 25 255 TS
DC 24V double POLE MCB
2CTB803853R5600
for OVR T2 1N 40 275 P TS
earthing calculation for commercial building
2CTB815101R8900
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2CTB815101R0300
Abstract: 2CTB815101R0800 2CTB803953R0500 2CTB803953R1800 2CTB803851R1200 2CTB803953R1400 2CTB803951R1300 2CTB815101R0700 2CTB803854R1200 2CTB803950R0100
Text: Main catalogue System pro M compact OVR surge protective devices 1TXH000083C0201.indb 1 07/03/2011 10:19:32 OVR PLUS N1 40 and OVR PLUS N3 40 NEW Residential 1TXH000083C0201.indb 2 Commercial Industrial 07/03/2011 10:19:43 System pro M compact® OVR surge protective devices
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1TXH000083C0201
C0201
2CTB815101R0300
2CTB815101R0800
2CTB803953R0500
2CTB803953R1800
2CTB803851R1200
2CTB803953R1400
2CTB803951R1300
2CTB815101R0700
2CTB803854R1200
2CTB803950R0100
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2CTB815101R0700
Abstract: 2CTB803952R1100 solar power inverter Circuit diagram 2CTB803953R6400 for OVR T1 1N 25 255 TS 2CTB803950R0100 abb inverter 2CTB803952R1200 for OVR T2 1N 40 275 P TS 2CTB803950R0000
Text: Lightning & Overvoltage Protection Photovoltaic systems ABB : Recognized competence in lightning protection COMPETENCE Lightning wave generator 10 / 350 ABB Laboratory at Bagnères-de-Bigorre, in France 200 kV generator ABB Lightning Protection Group, established
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2CTB803952R1200
2CTB804820R0400
F-95340
B0202
2CTB815101R0700
2CTB803952R1100
solar power inverter Circuit diagram
2CTB803953R6400
for OVR T1 1N 25 255 TS
2CTB803950R0100
abb inverter
2CTB803952R1200
for OVR T2 1N 40 275 P TS
2CTB803950R0000
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Untitled
Abstract: No abstract text available
Text: Visibility Correction Light Sensor MM1616 MITSUMI Visibility Correction Light Sensor Monolithic IC MM1616 Outline This IC is a visibility correction light sensor integrating a photodiode with a current amplifying circuit into one chip. It realizes output characteristics that is close to human visibility by including an optical filter.
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MM1616
1000lx)
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IEC 60384-14
Abstract: F1710 F1773 F1778 F1779
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors AC Ca pacito r s w w w. v i s h a y. c o m S e l ector G uide rfi suppression components RFI Suppression Components AC Capacitors AC Capacitors Impedance Z as function of frequency (f) (average)
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F1778
F1779
F1773
VMN-SG1511-0703
IEC 60384-14
F1710
F1773
F1778
F1779
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Untitled
Abstract: No abstract text available
Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options
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OT223/SOT89
2N7002*
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85031B
Abstract: No abstract text available
Text: E5061B-3L5 LF-RF Network Analyzer with Option 005 Impedance Analysis Function Data Sheet E5061B-3L5 with Option 005; NA plus ZA in one box To ensure the performance and reliability of electronic equipment, it is crucial to evaluate impedance characteristics of various electronic
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E5061B-3L5
E5061B-005
E5061B3L5
5990-7033EN
85031B
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Untitled
Abstract: No abstract text available
Text: Silicon Power Rectifier D Series Dim. Inches Î 00 { Minimum A B C D E F G H h M c E 1 I _L_ I I I G 1 D 1 \ — B— S3520PF S3540PF S3560PF R epetitive Peak Reverse V oltage 50V 100V 200V 300V 400V 500V 600V 16.0 Dia. 12.6 15.2 8 .9 0 13.0 Dia. 9.4 0 2 .2 8
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S3520PF
S3540PF
S3560PF
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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2N3904U
Abstract: 2N3906U 1N916 20MS ST30
Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(M ax.) Œ2 @ V ce=30V, V eb=3V. • Excellent DC Current Gain Linearity.
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2N3904U
2N3906U.
2N3904U
2N3906U
1N916
20MS
ST30
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1N1191
Abstract: 1N1198 1N1301 S304100 S304120 S30420 S30440 S30460 S30480 1N2793
Text: Silicon Power Rectifier S/R304 Series Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes ,^ -J g Microsemi Catalog Num ber S tandard * * * * * * S30420 S30440 S30460 S30480 S 304 100 S 304 120 Notes: 1. Full threads within 2 1 / 2 threads 2. Standard Polarity; Stud is
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S/R304
D0203AB
S30420
S30440
S30460
S30480
S304100
0500V
1N2285
1N3214
1N1191
1N1198
1N1301
S304100
S304120
S30480
1N2793
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1N3765
Abstract: 1 J 250 1N1184 1N1183 1N1183A 1N1184A 1N1185 1N1185A 1N1190 1N3768
Text: Silicon Power Rectifier 1N1183—1N1190, 1N3765-1N3768 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes _ _ .6 8 7 .7 9 3 1.00 .4 5 3 .2 0 0 .4 5 0 .2 4 9 .3 7 5 1 6 .9 5 17 .4 4 2 0 .1 4 2 5 .4 0 11.50 5 .0 8 11.43 6 .3 2 9 .5 2 .6 6 7 .0 8 0
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1N1183â
1N1190,
1N3765â
1N3768
D0203AB
1N1183,
1N1183A
1N1184,
1N1184A
1N1185,
1N3765
1 J 250
1N1184
1N1183
1N1185
1N1185A
1N1190
1N3768
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di 437
Abstract: 1n3921
Text: Silicon Power Rectifier S / R 4 2 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 U N F -3 A CC 1 1.050 - 4.30 .610 .213 - .344 .276 .465 - 1.060 1.166 4.70 .640 .233 .745 .373 .286
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S4220
D0205AA
S/R42
di 437
1n3921
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Untitled
Abstract: No abstract text available
Text: Silicon Pow er R e c t i f i e r Dim Inches M illim e te r M inim um M axim um p D E J_ N otes: 1. Full th re a d s w ith in 2 1 / 2 th re a d s 2. S ta n d a rd P o la rity : S tu d is C a th o d e R everse P o la rity : S tu d is A node A B C D E F G H J
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KTC4419
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4419 T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. MILLIMETERS FEATURES • Excellent Switching Times
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KTC4419
100/xH
KTC4419
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Untitled
Abstract: No abstract text available
Text: Ul tra Fast Recovery Rect i f i er 1N5812 - 1N5816 Dim Inches M illim e te r M inim um M axim um M inim um M axim um N otes Notes: 1. 1 0 - 3 2 UNF3A th re a d s 2. Full th re a d s w ithin 2 1/ 2 th re a d s 3. S ta n d a rd P o la rity: S tud is C athode
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1N5812
1N5816
1N5814*
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BUK555-50A
Abstract: BUK555-50B T0220AB
Text: N AMER PH IL I PS /D IS CR ET E SSE J> m bfciS3ci31 0D20t3S G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B T “- 3 ? - y 3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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bfaS3T31
0D20t3S
BUK555-50A
BUK555-50B
BUK555
Dra20
BUK555-50A
BUK555-50B
T0220AB
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1N6306 JANTX
Abstract: 1N6304 1N6305 1N6306
Text: Military Ultra Fast Rectifier 1N6304 - 1N6306 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes Notes: „ I I L il . il J 1. 1 /4 -2 8 U N F 3 A th re ad s 2. Full th re a d s w ithin 2 1 /2 th re ad s 3. For Reverse P o la rity add R to P a rt Num ber
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1N6304
1N6306
1/4-28UNF3A
D0203AB
1N6304*
1N6305*
1N6306*
1N6306 JANTX
1N6305
1N6306
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2N3904S
Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
Text: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.
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2N3904S
2N3906S.
60TTER
2N3904S
2N3906S
2N3904S SOT-23
2N3906S SOT-23
2N3904
ph-13 transistor
1N916
20MS
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zener diode 1N PH 48
Abstract: 1n 48 ph zener ferrite core transformer
Text: ERICSSON ^ October 1998 PBL 3755/1N PCM-Repeater Description Key Features The PBL 3755/1N is a bipolar integrated circuit that contains all the necessary functions to form a regenerative repeater for Pulse Code Modulated PCM telecommunications systems. The circuit is designed to operate at 2.048 Mbps CEPT
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3755/1N
1522-PBL
3755/1N
S-164
zener diode 1N PH 48
1n 48 ph zener
ferrite core transformer
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1N4004
Abstract: 1N4004 rectifier diode
Text: UNCONTROLLED DOCUMENT SC:0.50 PART N U M B E R SSI —LXH9SBC —Q1 9 9 3 8 CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. PRELIMINARY IN P / N DIR ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER
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120VAC.
1N4004
1N4004 rectifier diode
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LNL-LT1
Abstract: No abstract text available
Text: @ S P S P T 1 1 6 T SIGNAL PROCESSING TECHNOLOGIES THREE TERMINAL VOLTAGE REGULATOR FEATURES APPLICATIONS • • • • • • • • • • • • • • • Low Dropout Voltage Very Low Standby Current No Load Good Load Regulation Internal Thermal Shutdown
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SPT116
LNL-LT1
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SK1502
Abstract: No abstract text available
Text: SEIVITEOH SK1502 1:5 Clock and Data Distributor Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. Functional Description The SK1502 is an extremely fast, stable, and accurate low skew 1:5
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SK1502
SK1502
X-100
Y-100
Z-100
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EM 328
Abstract: 1N5149A
Text: tV J A N S tV 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6137A 1N6139A-1N6173A Microsemi Corp. $T+ \}>fj'otfvc*oeri\ SANTA A N A , CA For mure inform ation call' 7M FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR HOST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.
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1N6103-1N6137
1N6139-1N6173
1N6103A-1N6137A
1N6139A-1N6173A
MIL-S-1950D/516.
15Q0W
1N6103-1N613
1N6139-1N6173,
1N6103A-1N6137A,
139A-1N6173A
EM 328
1N5149A
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