0119A
Abstract: A3240 A3240ELH halleffect sensor
Text: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT CC 2 3 OUTPUT SUPPLY 1 GROUND V Dwg. PH-003-2 Pinning is shown viewed from branded side. Data Sheet 27621.20 3240 CHOPPER-STABILIZED, PRECISION
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PH-003-2
A3240--
MH-015
0119A
A3240
A3240ELH
halleffect sensor
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0119A
Abstract: A3280 A3281 A3281ELH A3283 SC 3281
Text: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT 1 2 3 GROUND OUTPUT CC SUPPLY V Dwg. PH-003-2 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS at TA = +25°C Supply Voltage, VCC . 26.5 V
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PH-003-2
MH-015
0119A
A3280
A3281
A3281ELH
A3283
SC 3281
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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Untitled
Abstract: No abstract text available
Text: GaN POWER with UMS UMS State-of-the-Art Offer UMS launches its first family of state-of-the-art GaN power transistors: • High Power • High Efficiency • Thermally Optimized UMS GaN transistors are available in Flanged Packages. General Purpose Part Number
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CHK015A-SMA
CHK025A-SOA
CHK040A-SOA
CHK080A-SRA
CHZ050
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Untitled
Abstract: No abstract text available
Text: 2N2880 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package features a 180 degree lead orientation.
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2N2880
MIL-PRF-19500/315
T4-LDS-0327,
190-32UNF-2A
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2n3749
Abstract: No abstract text available
Text: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to the JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.
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2N3749
MIL-PRF-19500/315
O-111
H28/1
FED-STD-H28/1)
T4-LDS-0328,
190-32UNF-2A
2n3749
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TA 8644
Abstract: BFP690 SCT595 GMA marking
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
SCT595
200mA
Oct-30-2002
TA 8644
BFP690
SCT595
GMA marking
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PDF
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marking r4s
Abstract: R4S BFP640 BFP640 BFP640 noise figure
Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications 1 Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Jul-25-2002
marking r4s
R4S BFP640
BFP640
BFP640 noise figure
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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R4S BFP640
Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Apr-21-2004
R4S BFP640
BFP640
VPS05605
4ghz s parameters transistor
s parameters 4ghz
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D1407
Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance
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BUZ54_
bfa53131
BUZ54
T-39-13
D1407
BUZ54
t03 package transistor pin dimensions
MC 140 transistor
2sc406
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LMT2903N
Abstract: lmt2903 LMT393 LMT393D LM 2903 MOTOROLA LMT2903D T393 LM 797 T2903 LMT39
Text: Tö Lÿnh Mürphÿ Fréni Motorola Desìqn-NÉT Ph:602-244-659i Fäx:6Ö2-244-6693 797 13:55 MOTOROLA LMT393, LMT2903 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION DUAL SINGLE SUPPLY COMPARATORS □UAL COMPARATORS The LMT393family of comparators are dual independent voltage
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602-244-659i
LMT393,
LMT2903
LMT393family
T2903
LMT2903N
lmt2903
LMT393
LMT393D
LM 2903 MOTOROLA
LMT2903D
T393
LM 797
T2903
LMT39
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TRANSISTOR BD 338
Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
Text: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered
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BD332;
BD336;
13-3i
BD337.
T--33--31
711002b
TRANSISTOR BD 338
Philips 336
transistor 338
BD 338 N
1507-50A
BD335
BD331
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IH33
Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
Text: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR
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ECG978
ECG978
22-SECOND
IH33
LIMING relay
relay by liming
YBS3
LIMING VOLTAGE RELAY
APPLICATIONS OF astable multivibrator
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PDF
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KTC4520
Abstract: TT-B-2
Text: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.
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KTC4520
220AB
ELECTR05
KTC4520
TT-B-2
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PDF
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CI L200
Abstract: KTC4521
Text: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .
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KTC4521
200/iH
CI L200
KTC4521
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PDF
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F40 marking
Abstract: KTC3882
Text: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C
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KTC3882
OT-23
50MHzV
F40 marking
KTC3882
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PDF
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Untitled
Abstract: No abstract text available
Text: KRC407 — SEMICONDUCTOR KRC409 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
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KRC407
KRC409TRANSISTOR
KRC409
KRC408
KRC407â
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PDF
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TIP31C
Abstract: TIP32C
Text: SEMICONDUCTOR TECHNICAL DATA TIP32C TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C. MILLIMETERS MAXIMUM RATINGS Ta=25°C 15.30 MAX CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage -100 V V CBO Collector-Emitter Voltage
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TIP32C
TIP31C.
220AB
--500mA
-30-100-300-lk
-3k-10k
-3k-10k
TIP31C
TIP32C
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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KTA2014E
Abstract: KTC4075E
Text: KTA2014E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : h F E 0 .1 m A /h F E (2 m A )= 0 .9 5 (T y p .). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA2014E
KTC4075E.
KTA2014E
KTC4075E
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PDF
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kra102s equivalent
Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
Text: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRA101S-
KRA106S
KRA101S
KRA102S
KRA103S
KRA104S
KRA105S
KRA106S
KRA105S
kra102s equivalent
KRA101S-KRA106S
106S
transistor mark PH
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PDF
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TIP31C
Abstract: TIP32C
Text: SEMICONDUCTOR TIP32C TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C. DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT -100 V CBO
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OCR Scan
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TIP32C
TIP31C.
--500mA
-30-100-300-lk
-3k-10k
TIP31C
TIP32C
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