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    PHILIPS BUK 100 Search Results

    PHILIPS BUK 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADSP-21369KSWZ-1A Analog Devices 266 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369BSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-5A Analog Devices 366MHz Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KBPZ-3A Analog Devices 400 MHZ Sh Memory ,S/PDIF/SDRA Visit Analog Devices Buy

    PHILIPS BUK 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET IGBT THEORY AND APPLICATIONS

    Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
    Text: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.


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    PDF BUK7508-55 MOSFET IGBT THEORY AND APPLICATIONS tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package

    BUK552-100A

    Abstract: BUK552-100 BUK562-100A buk 154 BUK562-100
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK562-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.


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    PDF BUK562-100A OT404 BUK552-100A BUK552-100 BUK562-100A buk 154 BUK562-100

    TOPFET

    Abstract: AN01048 TOPFET high side switch 5 PIN mosfet application solenoid driver circuit diagram of mosfet based speed control mosfet handbook pull type solenoid coils TOPFET high side switch two way solenoid valve circuit diagram
    Text: APPLICATION NOTE PIP3 TOPFETs for industrial automation AN01048 Philips Semiconductors Application information PIP3 TOPFETs for industrial automation CONTENTS 1 INTRODUCTION 2 DEFINITION 3 LOW SIDE TYPE ‘PIP31*’ 4 LOW SIDE QUICK REFERENCE DATA 5 HIGH SIDE TYPE (‘PIP32*’)


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    PDF AN01048 PIP31* PIP32* SCA73 613512/1000/01/pp12 TOPFET AN01048 TOPFET high side switch 5 PIN mosfet application solenoid driver circuit diagram of mosfet based speed control mosfet handbook pull type solenoid coils TOPFET high side switch two way solenoid valve circuit diagram

    553-50A

    Abstract: BUK553-50A BUK553-60A BUK553-60B BUK55 buk553
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF O220AB BUK553-60A/B BUK553 553-50A BUK553-50A BUK553-60A BUK553-60B BUK55 buk553

    BUK543

    Abstract: BUK543-60 BUK543-60A BUK543-60B DC4010
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF OT186 BUK543-60A/B BUK543 BUK543 BUK543-60 BUK543-60A BUK543-60B DC4010

    BUK552-60

    Abstract: BUK552-60A BUK562-60A
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


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    PDF OT404 BUK562-60A BUK552-60 BUK552-60A BUK562-60A

    BUK552

    Abstract: BUK552-100A BUK552-100B
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF O220AB BUK552-100A/B BUK552 -100A -100B BUK552 BUK552-100A BUK552-100B

    BUK552

    Abstract: BUK552-60A BUK552-60B BUK552-60
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF O220AB BUK552-60A/B BUK552 BUK552 BUK552-60A BUK552-60B BUK552-60

    BUK475-600B

    Abstract: tipi transistor 3909
    Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 PHILIPS BUK 475-600B PowerMOS transistor SbE » INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    PDF 475-600B -600B -SOT186A BUK475-600B tipi transistor 3909

    BUK475-400B

    Abstract: LD25C BUK475 3909
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode


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    PDF OT186A 475-400B 711002b 0d44b4" BUK475-400B LD25C BUK475 3909

    D-25CF

    Abstract: 3909
    Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 BUK 539-60A PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    PDF 39-60A 7110SEb 01i-state T-39-09 BUK539-60A 711DfiSb 0044b78 D-25CF 3909

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE i- 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF 475-400B 711002b D044b4* BUK475-400B

    rm3 transistor

    Abstract: BUK478
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    PDF 76-800A/B BUK446-800A/B 7110flSb -800A -800B BUK476 BUK476-800A/B 7110f rm3 transistor BUK478

    DIODE B97

    Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
    Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF BUK446-800A/B 76-800A/B -SOT186A 7110flSb DCI44fc BUK476 -800A -800B BUK476-800A/B 7110fi2b DIODE B97 BUK446-800A BUK446-800A application BUK476-800A BUK476-800B 3909

    D4MB

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF 711Qfl2b 76-1000A/B BUK446-1000A/B BUK476 -1000A -1000B -SOT186A T-39-09 BUK476-1000A/B 7110fi2b D4MB

    BUK445-500

    Abstract: BUK475-500B BUK475
    Text: - 7= 3 9 - 0 9 Philips Components Data sheet status Prelim inary specification BUK 475-500B PowerMOS transistor date of issue March 1991 R eplaces B U K 4 4 5 -5 0 0 A 'i H IL IP S GENERAL DESCRIPTION N -channel en han cem en t m ode field-effect pow er transistor in a


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    PDF 475-500B BUK445-500Â PINNING-SOT186A BUK445-500 BUK475-500B BUK475

    S0T426

    Abstract: INCOMING QUALITY PLANNING FORMAT
    Text: Philips Semiconductors PowerMOS transistors , ^ , . . . mn>- „ . Introduction including TOPFETs and IGBTs_ QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


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    PDF IS09000 CDF-AEC-Q100 -Q101 QS9000 S0T426 INCOMING QUALITY PLANNING FORMAT

    TOPFETs FETs

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


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    PDF

    BUK102-50GS

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL bSE » • 7110fl2ti 0GL.3Ö34 b5D BIPHIN Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET In a 3 pin plastic envelope, intended as a general purpose switch for


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    PDF BUK102-50GS BUK102-50BS BUK102-50GS T0220AB

    BUK657-600A

    Abstract: No abstract text available
    Text: ^53=131 D0E071S 1 • 5SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r F ast R ec o v e ry D io d e F E T B U K 657-600A B U K 657-600B B U K 657-600C G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode


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    PDF D0E071S 57-600A 657-600B 657-600C BUK657 bb53T31 657-6Q BUK657-600A

    BUK657

    Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
    Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    PDF fab53131 D2D71D BUK657-500A BUK657-500B BUK657-500C BUK657 -500A -500B -500C ID/100 BUK657-500C T0220AB

    mst 702 lf

    Abstract: BUK995-60A
    Text: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


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    PDF OT263 BUK995-60A 711QfiEb 004M7LS BUK995-60A mst 702 lf

    k541

    Abstract: K54-16 BUK541 BUK541-60A BUK541-60B
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF -SOT186 K541-60A/B 711dfleb BUK541 k541 K54-16 BUK541-60A BUK541-60B

    k54160a

    Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack


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    PDF -SOT186 K541-60A/B 711DflEb BUK541 K541-60A/B k54160a BUK541-60A BUK541-60B k541 TRANSISTOR k541