C2 ph zener diode
Abstract: C 12 PH zener diode ph c5 diode C 15 PH Zener diode C 13 PH Zener diode philips diode PH 13 IP4220CZ6_4 14555 C 11 PH Zener diode
Text: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 8 June 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates
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IP4220CZ6
IP4220CZ6
C2 ph zener diode
C 12 PH zener diode
ph c5 diode
C 15 PH Zener diode
C 13 PH Zener diode
philips diode PH 13
IP4220CZ6_4
14555
C 11 PH Zener diode
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AV73
Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Text: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s
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BAV73
117027/00/01/pp8
AV73
Js SMD MARKING CODE SOT23
sot23 package marking AV
smd DIODE code marking kA
SMD IC marking 632
lm 9805
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BAS678
Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It
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b53T31
002432b
BAS678
10mAtoVâ
bb53T31
QDE4331
BAS678
BAW62
BAW62
BAW62 SOT23
MBB111
apx 188
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BUK637-500B
Abstract: No abstract text available
Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
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BUK637-500B
BUK637-500B
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BUK655-500B
Abstract: No abstract text available
Text: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK655-500B
PINNING-T0220AB
bbS3T31
003Dflai4
BUK655-500B
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BAT85
Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against
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DO-34)
BAT85
711002b
BAT85 sot
PHILIPS DIODE
philips Schottky diode
MARKING 12p
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SUS CIRCUIT breakover device
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
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41D74
BR216
BR216
T0-220AB
T-ll-23
SUS CIRCUIT breakover device
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ECG711
Abstract: ecg block diagram tv receiver schematic diagram PHILIPS tv schematic diagram PHILIPS ECG circuit diagram television internal parts block diagram ECG 5 V zener diode ECG 8 V zener diode Philips ECG "voltage divider" 2SC830
Text: bbsaiafl 00032Ö3 4 ECG711 W IDE-BAND AM PLIFIER/PH ASE DETECTOR WITH ZEN ER DIODE VOLTAGE REGULATOR PHILIPS E C G INC T '"7* 7- 0- 7- O S For AFC A utom atic Frequency Control] Applications 17E D PHASE DETECTOR TRANSFORMER D ESC R IPTIO N The E C G 711 represents a second genera
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ECG711
ECG711
ecg block diagram
tv receiver schematic diagram PHILIPS
tv schematic diagram PHILIPS
ECG circuit diagram
television internal parts block diagram
ECG 5 V zener diode
ECG 8 V zener diode
Philips ECG "voltage divider"
2SC830
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DIODE T25 4 EO
Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Text: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable
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-SOT199
BUK627-500B
71IDA2b
T-39-11
711GflEb
0044S10
DIODE T25 4 EO
DIODE T25 4 bo
DIODE T25 4 ko
diode,FET
BUK627-500B
DIODE T25-4-bo
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW156 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAW156 PINNING
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BAW156
BAW156
115002/00/03/pp8
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BG521
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV170 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV170 PINNING
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BAV170
BAV170
115002/00/03/pp8
BG521
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV199 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING
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BAV199
BAV199
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm
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711002b
138/C
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Untitled
Abstract: No abstract text available
Text: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no
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BTV58
O-220AB
1000R
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Untitled
Abstract: No abstract text available
Text: D EVELO PM EN T DATA This data sheet contains advance Information and specifications are subject to change without notice. • ^53=131 0021115 3 ■ 4N46 | I - N AUER P H I L I PS/DISCRETE SSE D T ' f f - & £ T GaAIAs, RESISTOR-DARLINGTON, OPTOCOUPLER
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T-41-85
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diode 0317
Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
Text: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r
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BYQ28
T-03-17
m3066
diode 0317
diode sv 03 7n
ALPS 102
diode BYq28
diode sv 0317
saia
double diode parallel
C117
diode M1
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BUK438-500B
Abstract: No abstract text available
Text: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3R31
BUK438-500B
bbS3T31
DD30M
BUK438-500B
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon
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bbS3T31
DD2bfl32
PLVA400A
PLVA400A
aPLVA456A
PLVA459A
PLVA462A
PLVA465A
PLVA468A
PLVA459A
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phd55n03
Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25
Text: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • • PH P55N 03LT, P H B 55N 03LT P H D 55N 03LT QUICK REFERENCE DATA V DSS = 25 V d ’Trench’ technology Very low on-state resistance
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PHP55N03LT,
PHB55N03LT
PHD55N03LT
14mil
PHP55N03LT
T0220AB)
phd55n03
transistor smd xc
PHD55N03LT
SMD footprint design
SC18
T0220AB
TRANSISTOR LD25
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PH 21 DIODE
Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Text: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o
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PLVA400A
DO-35
PLVA459A
PLVA456A
PLVA450A
PLVA453A
250MA
MLA423
PH 21 DIODE
DD40
PLVA453A
PLVA462A
PLVA465A
PLVA468A
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BUZ308
Abstract: DG14 mc496
Text: N AMER PH ILI PS/DIS CRET E OLE D PowerMOS transistor ~ • ^53=131 DOmflGfl A ■ BUZ308 T-31-U ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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LiLj53cÃ
BUZ308
T0218AA;
T-39-11
BUZ308
DG14
mc496
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diode smd marking code 421
Abstract: marking s4 BBY62 Philips diode 16T MARKING DIODE marking S4 04 marking code LA SMD marking s4 diode smd marking code fj BBY62 "Variable Capacitance Diode"
Text: b'lE T> N AMER PHILIPS/ DISCRETE m ^33*131 Q02fc.453 223 « A P X Philips Sem iconductors Product specification Double variable capacitance diode DESCRIPTION BBY62 Q UICK REFERENCE DATA The BBY62 is a double variable capacitance diode in a m icrom iniature SO T143 envelope. It
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bbS3131
Q02b453
BBY62
BBY62
OT143
MBB066
2b457
diode smd marking code 421
marking s4 BBY62
Philips diode
16T MARKING
DIODE marking S4 04
marking code LA SMD
marking s4 diode
smd marking code fj
"Variable Capacitance Diode"
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LHi 878
Abstract: LHi 878 application A429 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A
Text: bbSBTBl Philips Semiconductors GGEL&3 E 122 M APX Product specification Low voltage avalanche diode N AMER PLVA400A P H IL IP S /D IS C R E T E FEATURES DESCRIPTION • Very low dynamic im pedance at low currents: approxim ately Vfeo of conventional series
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bbS3T31
PLVA400A
PLVA400A
DO-35
PLVA465A
PLVA468A
PLVA459A
PLVA456A
PLVA450A
PLVA453A
LHi 878
LHi 878 application
A429
PLVA453A
PLVA462A
PLVA465A
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n 943 y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES
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PMBD6100
PMBD6100
115002/00/03/pp12
n 943 y
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