Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION 1300nm 8C483 1550nm PIN/Preamp Datacom This device contains a PIN photodiode, a low noise GaAS transimpedance amplifier with differential limiting amplifier assembled in a TO-46 package. It is designed for Fibre Channel and Gigabit Ethernet. Its
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1300nm
8C483
1550nm
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top marking 293
Abstract: TO46 package LED 1300 nm
Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control
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1300nm
8C443
1550nm
top marking 293
TO46 package LED 1300 nm
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8C443
Abstract: No abstract text available
Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control
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1300nm
8C443
1550nm
8C443
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ISO-2768-mK
Abstract: GR468-CORE ZL60007 ISO-2768-m
Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance
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ZL60007
1310nm,
1550nm
622Mbps
ZL60007/TBD
622Mbps.
GR468-CORE.
ISO-2768-mK
GR468-CORE
ZL60007
ISO-2768-m
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InGaas PIN photodiode, 1550 NEP
Abstract: ISO 2768-mk PIN Photodiode 1550nm photodiode responsivity 1550nm PIN-TIA GR468-CORE ZL60007 InGaAs photodiode 1310 1550 InGaAs 1550 photodiode transimpedance amplifier P InGaAs photodiode TO-46
Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance
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ZL60007
1310nm,
1550nm
622Mbps
ZL60007/TBD
622Mbps.
GR468-CORE.
InGaas PIN photodiode, 1550 NEP
ISO 2768-mk
PIN Photodiode 1550nm
photodiode responsivity 1550nm
PIN-TIA
GR468-CORE
ZL60007
InGaAs photodiode 1310 1550
InGaAs 1550 photodiode transimpedance amplifier P
InGaAs photodiode TO-46
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8C489
Abstract: TO46 package
Text: PRODUCT INFORMATION 1300nm 8C489 1550nm PIN/Preamp E V ATI ENT Datacom This device contains a PIN photodiode and a low noise transimpedance amplifier with Automatic Gain Control AGC assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet at 155Mbps.
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1300nm
8C489
1550nm
155Mbps.
90MHz
8C489
TO46 package
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Untitled
Abstract: No abstract text available
Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance
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ZL60007
1310nm,
1550nm
622Mbps
ZL60007/TBD
622Mbps.
GR468-CORE.
OC-12
622Mblude
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photodiode 1550nm nep
Abstract: GR468-CORE ZL60007 InGaAs photodiode 1310 1550
Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance
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ZL60007
1310nm,
1550nm
622Mbps
ZL60007/TBD
622Mbps.
GR468-CORE.
photodiode 1550nm nep
GR468-CORE
ZL60007
InGaAs photodiode 1310 1550
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Untitled
Abstract: No abstract text available
Text: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance
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ZL60007
1310nm,
1550nm
622Mbps
ZL60007/TBD
622Mbps.
GR468-CORE.
OC-12
622lude
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photodiode sensivity 1550nm 2
Abstract: No abstract text available
Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60006/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode, a low noise transimpedance amplifier
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ZL60006
1310nm,
1550nm
ZL60006/TBD
125Gbps
OC-48
GR-468-CORElude
photodiode sensivity 1550nm 2
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8C447
Abstract: No abstract text available
Text: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of
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8C447
1550nm
8C447
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8C447
Abstract: top marking 293
Text: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of
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1300nm
8C447
1550nm
8C447
top marking 293
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Untitled
Abstract: No abstract text available
Text: ZL60009 1310nm, 1550nm 155Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance
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ZL60009
1310nm,
1550nm
155Mbps
ZL60009/TBD
200Mbps
GR-468CORE.
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ISO 2768-mk
Abstract: photodiode 1550nm nep 1300nm-1550nm 1550nm photodiode nep MC2045 ZL60009 04078
Text: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed
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ZL60009
1300nm-1550nm
ZL60009/TBD
GR-468CORE.
200Mbps
ISO 2768-mk
photodiode 1550nm nep
1300nm-1550nm
1550nm photodiode nep
MC2045
ZL60009
04078
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1550nm photodiode nep
Abstract: photodiode 1550nm nep MC2045 ZL60009
Text: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed
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ZL60009
1300nm-1550nm
ZL60009/TBD
GR-468CORE.
200Mbps
1550nm photodiode nep
photodiode 1550nm nep
MC2045
ZL60009
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30817com.
diode d1n914
d1n914 DIODE
d1n914
C30817E
C30659-1550-R2A
InGaas PIN photodiode, 1550 NEP
C30950
Silicon and InGaAs APD Preamplifier Modules
C30954E
avalanche photodiode 1550nm sensitivity
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C30817E
Abstract: No abstract text available
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30om.
C30817E
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photodiode 1550nm nep
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input
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264-339759-VAR
12lead
200um]
200um,
Opto759-VAR
photodiode 1550nm nep
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FDS010
Abstract: FDS100 circuit PDA155 FGA10 PDA255 FDS100 THORLABS FGA10 Photodiode 1550nm bandwidth PDA400 PDA55
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode -High Responsivity -Low Capacitance: High Speed Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):
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FGA10
1550nm:
800-1800nm*
100nA
100mW
35/fBW
FDS010,
FDS100,
PDA55,
FDS010
FDS100 circuit
PDA155
PDA255
FDS100
THORLABS FGA10
Photodiode 1550nm bandwidth
PDA400
PDA55
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GR-468-CORE
Abstract: STM-16 ZL60006 ZL60006TDD ZL60006TED ISO 2768 mk
Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a
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ZL60006
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1550nm
ZL60006TED
ZL60006/TBD
ZL60006TDD
OC-48
GR-468-CORE.
125Gbps
GR-468-CORE
STM-16
ZL60006
ZL60006TED
ISO 2768 mk
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D400F
Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :
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FGA04
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800-1700nm
35/fBW
3154-S01
D400FC,
FGA10,
FGA04
D400F
D400FC
FGA10
photodiode responsivity 1550nm with FC connector
photodiode responsivity 1550nm 2
Photodiode 1550nm bandwidth
Photodiode, 1550nm NEP
THORLABS FGA10
1550nm photodiode 2GHz
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Zarlink Semiconductor
Abstract: No abstract text available
Text: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a
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ZL60006
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1550nm
ZL60006TED
ZL60006/TBD
ZL60006TDD
125Gbps
OC-48
Zarlink Semiconductor
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J16-18A-R01M-HS
Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a
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J16TE
3G30bGS
00D03Sb
3030b05
00GG3E7
J16-18A-R01M-HS
J16-8SP-R05M-HS
J16-18A-R01M
germanium photodiode
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J16-18A-R01M-SC
Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
Text: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a
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J16TE
303Gb05
J16-18A-R01M-SC
J16-8SP-R05M
J16-5SP-R02M-HS
J16-5SP-R02M-SC
photodiode ge
J16-18A-R01M
photodiode germanium
J16-18A-R01M-HS
J16-5SP-R03M-HS
germanium diode equivalent
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