MX28F2100B
Abstract: No abstract text available
Text: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current
|
Original
|
PDF
|
MX28F2100B
8/128K
144x8/131
072x16
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
MX28F2100B
|
28F2100
Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
Text: PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%
|
Original
|
PDF
|
MX28F2100B
8/128K
144x8/131
072x16
70/90/120ns
100uA
16K-Byte
96K-Byte
128K-Byte
PM0382
28F2100
block diagram for automatic room power control
MX28F2100B
28F2100B-70
|
Untitled
Abstract: No abstract text available
Text: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current
|
OCR Scan
|
PDF
|
144x8/131
072x16
70/90/120ns
10OnAmaximum
16K-Byte
96K-Byte
128K-Byte
44-PIN
48-PIN
|
Untitled
Abstract: No abstract text available
Text: [ P : R iiy [ lD Î M [ F S Y M X IC M X28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%
|
OCR Scan
|
PDF
|
MX28F2100B
144x8/131
072x16
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
DDD1104
MX28F2100BMC-70
MX28F21OOBMC-90
|
h5ra
Abstract: NTE 5432
Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%
|
OCR Scan
|
PDF
|
144x8/131
072x16
70/90/120ns
100nAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
Q0-Q15
XX90H
h5ra
NTE 5432
|