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    PNP DARLINGTON VCE 120V Search Results

    PNP DARLINGTON VCE 120V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    PNP DARLINGTON VCE 120V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking 705

    Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		FCX705 OT223 marking 705 Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA PDF

    Untitled

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		FCX705 OT223 PDF

    FCX705

    Abstract: FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		FCX705 OT223 FCX705 FCX705TA PDF

    marking 1F7

    Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 marking 1F7 ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 PDF

    Zetex T 705

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		FCX705 OT223 Zetex T 705 PDF

    2SB1382

    Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)


    Original     		-120V -16mA) 2SD2082 -16mA -120V -16mA, 2SB1382 transistor 12v 8A 2SD2082 pnp darlington VCE 120V PDF

    2SB1105

    Abstract: 2SD1605
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605


    Original     		-120V 2SD1605 -30mA -120V; -100V; 2SB1105 2SD1605 PDF

    2SB1340

    Abstract: 2SD1889
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS


    Original     		-120V 2SD1889 -120V 10MHz 2SB1340 2SD1889 PDF

    2sb1383

    Abstract: 2sd2083 transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083


    Original     		-120V 2SD2083 -24mA -120V, -24mA; 2sb1383 2sd2083 transistor IC 12A PDF

    2sd2083

    Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083


    Original     		-120V 2SD2083 -24mA -120V, -24mA; 2sd2083 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A PDF

    2SB1402

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications.


    Original     		-120V -30mA -100V; 2SB1402 PDF

    PNP TRANSISTOR 1k

    Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A


    Original     		-120V MJ11016 -120V; PNP TRANSISTOR 1k transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016 PDF

    2SB727

    Abstract: 2SD768
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A


    Original     		-120V 2SD768 -60mA -120V, -100V; 2SB727 2SD768 PDF

    2SD864

    Abstract: 2SB765
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A


    Original     		-120V 2SD864 -30mA -120V, -100V, 2SD864 2SB765 PDF

    120v 10a transistor

    Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A


    Original     		-120V 2SD1126 -10mA -120V, -100V, 120v 10a transistor DARLINGTON -5A 100v pnp 2SB955 2SD1126 PDF

    2SB1502 TRANSISTOR

    Abstract: 2SB1502 2SD2275
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS


    Original     		2SD2275 -120V; -100V; 2SB1502 TRANSISTOR 2SB1502 2SD2275 PDF

    2SB1259

    Abstract: 2sb125 2SD2081
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 APPLICATIONS ·Driver for solenoid,relay and motor and general purpose


    Original     		2SD2081 -10mA -120V; 2SB1259 2sb125 2SD2081 PDF

    STA408A

    Abstract: sta400
    Text: STA408A PNP Darlington General purpose Absolute maximum ratings External dimensions D Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)


    Original     		STA408A STA400 STA408A sta400 PDF

    STA308A

    Abstract: sta308
    Text: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)


    Original     		STA308A STA308A sta308 PDF

    STA308A

    Abstract: sta308 STA300
    Text: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)


    Original     		STA308A STA300 STA308A sta308 STA300 PDF

    SMA4030

    Abstract: No abstract text available
    Text: SMA4030 Absolute maximum ratings PNP Darlington General purpose External dimensions B Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 3 A hFE 2000 ICP 5 (PW≤1ms, Du≤50%) A VCE(sat) 1.1 1.5


    Original     		SMA4030 SMA4030 PDF

    2SB1502

    Abstract: No abstract text available
    Text: ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: Vce(sat)= -2.5V(Max.)@lc= -4A


    Original     		2SB1502 2SD2275 -120V 2SB1502 PDF

    MJ11032

    Abstract: MJ11033 transistor MJ11032
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11032


    Original     		-120V MJ11032 -250mA 500mA -500mA -120V; MJ11032 MJ11033 transistor MJ11032 PDF