pnp germanium to36
Abstract: NTE330 Germanium power
Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.
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NTE330
NTE330
pnp germanium to36
Germanium power
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SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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nte102
Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:
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NTE102
NTE103
200mV
nte102
NTE103
vpt 20
germanium transistors NPN
NTE10-3
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NTE158
Abstract: germanium pnp transistor Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium pnp transistor
Germanium power
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germanium Power Transistor
Abstract: Vcb-60V NTE27 Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
Vcb-60V
Germanium power
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germanium Power Transistor
Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
pnp germanium transistor
germanium transistor pnp
GERMANIUM TRANSISTOR
Germanium power
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NTE158
Abstract: germanium audio Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium audio
Germanium power
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NTE158
Abstract: Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
Germanium power
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Untitled
Abstract: No abstract text available
Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.
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2N4277
-15Ade,
-20Vde,
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bjt specifications
Abstract: 2N652A power BJT PNP
Text: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N652A
2N652A
com/2n652a
bjt specifications
power BJT PNP
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2N1303
Abstract: No abstract text available
Text: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1303
2N1303
com/2n1303
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bjt specifications
Abstract: No abstract text available
Text: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N651A
2N651A
com/2n651a
bjt specifications
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NTE179
Abstract: No abstract text available
Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating
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NTE179
NTE179
100mA
500mA,
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2N1309
Abstract: No abstract text available
Text: 2N1309 Ge PNP Lo-Pwr BJT 2.10 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1309 Online Store 2N1309 Diodes Ge PNP Lo -Pwr BJT Transistors Integrated Circuits Optoelectronics In Stock 9081 Brand New Available from $ 2.10
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2N1309
2N1309
com/2n1309
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germanium transistors PNP
Abstract: 2N1307 germanium PNP
Text: 2N1307 Ge PNP Lo-Pwr BJT 2.75 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1307 Online Store 2N1307 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1307
2N1307
com/2n1307
germanium transistors PNP
germanium PNP
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2N700
Abstract: No abstract text available
Text: 2N700 Ge PNP Lo-Pwr BJT 12.98 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N700 Online Store 2N700 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N700
2N700
com/2n700
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Untitled
Abstract: No abstract text available
Text: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.
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2N4048
dc-60Ade,
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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MR830
Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —
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MP600
MP603
MP600
MP601
MP602
MP603
MR830
germanium power transistors
Germanium power
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MP1613
Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt
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MP1613
J001I
MP1613
MPT613
adc 515
pnp germanium low power transistor
100-C
Germanium power
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2N404 transistor
Abstract: 2N404 VCE0-20V Germanium power
Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage
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7X10-4
2N404 transistor
2N404
VCE0-20V
Germanium power
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2N1195
Abstract: Germanium power
Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:
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2N1195
MIL-S-19500/71D,
2N1195
Germanium power
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2N1224
Abstract: 2N1225
Text: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use
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MIL-S-19500/189B
2N1224
2N1225
MIL-S-19500/189B,
MIL-STD-202"
2N1225
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army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
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MIL-S-19500/44D
MIL-S-19500/44C
2N428
000-hour
MIL-S-19500,
MIL-S-19500
army sc-c-179495
2N426
2N428
germanium transistor ac 127
STT 433
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