S30VT80
Abstract: No abstract text available
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VT80 CaseCase : 2F: SVT Unit : mm 800V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply
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S30VT80
S30VTx
S30VT80
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DMTU
KSC5302DMSTU
KSC5302DM
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KSC5302DM
Abstract: surgical spirit KSC5302D
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
surgical spirit
KSC5302D
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302D
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302DTU
KSC5302D
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302D
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302D
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"Power Diode" 10A 800v
Abstract: 7MBR10SA-140 IGBT 800v 20a 50Hz sine wave inverter circuit 7MBR10SA140 dc ac inverter schematic igbt igbt for dc to ac inverter
Text: 7MBR10SA140 IGBT Modules IGBT MODULE S series 1400V / 10A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR10SA140
"Power Diode" 10A 800v
7MBR10SA-140
IGBT 800v 20a
50Hz sine wave inverter circuit
7MBR10SA140
dc ac inverter schematic igbt
igbt for dc to ac inverter
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design sine wave power inverter
Abstract: 7MBR10SA140
Text: 7MBR10SA140 IGBT Modules IGBT MODULE S series 1400V / 10A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR10SA140
design sine wave power inverter
7MBR10SA140
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Untitled
Abstract: No abstract text available
Text: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems
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APT10SCD120B
O-247
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WF-260
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
WF-260
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
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MOSFET 800V 10A TO-3P
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
MOSFET 800V 10A TO-3P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N8at
QW-R502-218
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10N80L
Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N80G-TC3ues
QW-R502-218
10N80L
MOSFET 800V 10A TO-3P
mosfet 10a 800v high power
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MOSFET 800V 10A TO-3P
Abstract: 10n80 mosfet 337
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1ues
QW-R502-218
MOSFET 800V 10A TO-3P
mosfet 337
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mosfet 10a 800v
Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-t
QW-R502-218
mosfet 10a 800v
MOSFET 800V 10A TO-3P
MOSFET 800V 10A
10N80L
mosfet 10a 800v high power
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S10VT80
Abstract: C37 diode
Text: 三相ブリッジダイオード モジュール型 3 Phase Bridge Diode Module •外形寸法図 OUTLINE DIMENSIONS Package：SVT S10VT□/S10VTA□ Unit : mm Weight：31g（typ.） 24MAX 36MAX 13.1 11.5MAX 1 10 12.5 1.5 5 9±0.5 9±0.5 9 4 800V 10A C3.7
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S10VT/S10VTA
24MAX
Weight31g
36MAX
36MAX
S10VT60
Weight30g
S10VTA60
S10VT80
C37 diode
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DIODE 10a 800v
Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
DIODE 10a 800v
YG225D8
power Diode 800V 10A
YG225N8
N8 Diode
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 1.1A /400— 800V /trr: lOOnsec 10DF4 10DF6 10DF8 FEATURES • Miniature Size ° Super Fast Recovery « Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available » 52mm Inside Tape Spacing Package Available
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10DF4
10DF6
10DF8
10DF4
10DF6
G0G214b
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