2SK3871-01MR
Abstract: No abstract text available
Text: 2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3871-01MR
O-220F
100ms
2SK3871-01MR
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2SK3871-01MR
Abstract: No abstract text available
Text: 2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3871-01MR
O-220F
100ms
2SK3871-01MR
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2SK3870-01
Abstract: No abstract text available
Text: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3870-01
O-220AB
100ms
2SK3870-01
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2SK3870-01
Abstract: 2sk387
Text: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3870-01
O-220AB
100ms
2SK3870-01
2sk387
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SJ 76 A DIODE
Abstract: 2sk3872 diode sj 2SK3872-01L CC115
Text: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3872-01L
100ms
SJ 76 A DIODE
2sk3872
diode sj
CC115
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SJ 76 A DIODE
Abstract: 2SK3872-01L 48v dc 40a power supply
Text: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3872-01L
100ms
SJ 76 A DIODE
48v dc 40a power supply
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SJ 76 A DIODE
Abstract: 2sk387201l
Text: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3872-01L
Symbol48V
100ms
SJ 76 A DIODE
2sk387201l
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slc1012c
Abstract: slc1012 FAN7340 lcd monitor led SLC-101 tv led Simple Circuit Diagram of 230V to 3V Voltage Converter SLC101 230V AC to 3V DC ic "230v led"
Text: FAN7340 LED Backlight Driving Boost Switch Features Description • • The FAN7340 is a single-channel boost controller that integrates an N-channel power MOSFET for PWM dimming using Fairchild’s proprietary planar Doublediffused MOS DMOS technology.
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FAN7340
16-Lead
FAN7340
slc1012c
slc1012
lcd monitor led
SLC-101
tv led
Simple Circuit Diagram of 230V to 3V Voltage Converter
SLC101
230V AC to 3V DC ic
"230v led"
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slc1012c
Abstract: slc1012 FAN7340 slc1012c - FAN7340MX vds250
Text: FAN7340 LED Backlight Driving Boost Switch Features Description • • The FAN7340 is a single-channel boost controller that integrates an N-channel power MOSFET for PWM dimming using Fairchild’s proprietary planar Doublediffused MOS D MOS technology.
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FAN7340
FAN7340
slc1012c
slc1012
slc1012c -
FAN7340MX
vds250
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F05B23VR
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET F05B23VR N-Channel Enhancement type OUTLINE DIMENSIONS Case : B-pack Unit : mm 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input
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F05B23VR
2-24V
F05B23VR
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F05B23VR
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS F05B23VR Case : B-pack Unit : mm 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input
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F05B23VR
2-24V
F05B23VR
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
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2SK1194
Abstract: F05E23
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 F05E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1194
F05E23
2-24V
2SK1194
F05E23
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2SK1195
Abstract: F1E23 POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 F1E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
2SK1195
F1E23
POWER MOSFET N-Channel 230V
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1194
F05E23
2-24V
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2SK1195
Abstract: F1E23 10V 1.5A MOSFET N-channel POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1195
F1E23
2-24V
2SK1195
F1E23
10V 1.5A MOSFET N-channel
POWER MOSFET N-Channel 230V
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2SK1194
Abstract: POWER MOSFET N-Channel 230V F05E23 230V Mosfet
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1194
F05E23
2-24V
2SK1194
POWER MOSFET N-Channel 230V
F05E23
230V Mosfet
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triac b 978
Abstract: No abstract text available
Text: AP1695EV5 User Guide 230VAC Triac Dimmable GU10 LED Driver with Integrated MOSFET General Description This AP1695 Triac Dimmable GU10 12V/400mA Buck LEDs driver EV board use tapped transformer to increasing power conversion turn on duty cycle, boost
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AP1695EV5
230VAC
AP1695Â
2V/400mAÂ
triac b 978
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65W ac adapter schematic
Abstract: schematic diagram AC to DC 120v to 19.5v 65W flyback transformer construction ICE3AS03LJG ICE3BS03LJG SPA07N60C3 ICE2xXXX step up 19.5V surge lightning to smps adapter 65w
Text: Application Note, V1.0, May 2009 AN-EVALSF3-ICE3AS03LJG 65W 19.5V SMPS Evaluation Board with F3 PWM controller ICE3AS03LJG Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2009-05-15 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,
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AN-EVALSF3-ICE3AS03LJG
ICE3AS03LJG
85Vac
265Vac
ICE3AS03LJG
ICE3BS03LJG
65W ac adapter schematic
schematic diagram AC to DC 120v to 19.5v
65W flyback transformer construction
SPA07N60C3
ICE2xXXX
step up 19.5V
surge lightning to smps
adapter 65w
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LL200C
Abstract: No abstract text available
Text: M OSFET i.»\>7.*>bW Power MOSFET • N-Channel, Enhancement type O U T L IN E D IM E N S IO N S 2SK1194 230V 0.5A ■ æ fê * R A T IN G S Absolute Maximum Ratings m Item b2 -fSymbol s IS ÿ fit S to ra g e T em p eratu re ~f~ jf» Jf. Channel T em perature
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2SK1194
LL200C
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N and P MOSFET
Abstract: No abstract text available
Text: /X*7— M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S Case ." E -pack 2SK1194 2.55 ±0-2 230V 0.5A 0.5 * 0-! \ 0.5 1.1 ± 0-2 \ Gate . / Source Drain / ■ Unit • R A TIN G S A bsolute Maximum R atings m It e m B J
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2SK1194
200i3
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: J V J — M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A TIN G S A b s o lu te M axim um R a tin g s m Ite m s m -fS ym bot Jf* ^ m ii/ X m J y c . « R a tin g s m & U n it m -5 5 -1 5 0 T s tg
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2SK1195
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Untitled
Abstract: No abstract text available
Text: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re
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2SK1195
--10V,
--67i2
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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