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    POWER TRANSISTOR PY Search Results

    POWER TRANSISTOR PY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR PY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor


    OCR Scan     		PDF RX1214B170W 7/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RZ1214B35Y 127147/00/02/pp8

    xk30

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters


    OCR Scan     		PDF 2SD1614 2SD1614 xk30

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RZ1214B65Y 127147/00/02/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor


    OCR Scan     		PDF BLF1048 SC19a BLF1048 125108/00/03/pp8

    IEI-1213

    Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
    Text: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SD999 2SD999 OT-89 2SB798 IEI-1213 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide

    SOT422A

    Abstract: BLS3135-65
    Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES


    OCR Scan     		PDF BLS3135-65 OT422A SOT422A BLS3135-65

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BDP32 PNP medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BDP32


    OCR Scan     		PDF BDP32 OT223 BDP31. MAM288 OT223) 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BCP69


    OCR Scan     		PDF BCP69 OT223 BCP68. MAM288 OT223) 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES


    OCR Scan     		PDF BCP68 OT223 BCP69. MAM287 OT223) 115002/00/03/pp8

    5490A

    Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SB798 2SD999 5490A B 1359 970-900 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89

    transistor ph 45 v

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A


    OCR Scan     		PDF BD330 BD330 BD329. 115002/00/03/pp8 transistor ph 45 v

    2SA1463

    Abstract: 2SC3736 MEI-1202 MF-1134
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES


    OCR Scan     		PDF 2SA1463 2SA1463 2SC3736 MEI-1202 MF-1134

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC368 NPN medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium power transistor BC368


    OCR Scan     		PDF BC368 BC369. 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC369 PNP medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BC369


    OCR Scan     		PDF BC369 BC368. 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a lastic full pack envelope, he device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK426-200A/B BUK426 G044125 -200A -200B T-39-11 BUK426-200A/B 711002b

    LM 886 IC chip

    Abstract: TEKELEC te 358
    Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature


    OCR Scan     		PDF BLV2045N BLV2045N OT39QA LM 886 IC chip TEKELEC te 358

    2SC3046

    Abstract: transistor ITT
    Text: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran­ sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.


    OCR Scan     		PDF 2SC3046 2SC3046 transistor ITT

    marking 3t1

    Abstract: marking S3 amplifier RV2833B5X
    Text: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


    OCR Scan     		PDF RV2833B5X T-33-N bS3131 RV2833B5X Q01S17D marking 3t1 marking S3 amplifier

    PHT11N06LT

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low


    OCR Scan     		PDF PHT11N06LT OT223 OT223. PHT11N06LT

    S100 transistor

    Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
    Text: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002h BUK455-200A/B T0220AB buk455 -200a -200b Ti/C-150 -ID/100 S100 transistor BUK455-200A BUK455-200B S100 transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100

    2SB1301

    Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134