Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PRESS-PACK IGBT Search Results

    PRESS-PACK IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    PRESS-PACK IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    calculation of IGBT snubber

    Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
    Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: frank.wakeman@westcode.com


    Original
    EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB PDF

    thyristor k 202 russian

    Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
    Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)


    Original
    SS15BL M6x15 M6x10 thyristor k 202 russian russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a PDF

    Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product

    Abstract: press-pack igbt T2250AB25E
    Text: Press Release Contacts: Westcode Semiconductors Ltd, UK - Frank Wakeman, +44 1249 444524. IXYS Long Beach – Ray Segall, 562-296-6584 US sales enquiries only Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product Biel, Switzerland, November 18, 2009 — IXYS Corporation (NASDAQ:IXYS) announced that


    Original
    PDF

    SCX13

    Abstract: XSGSCX13 jet-lube press-pack igbt FUJIFILM prescale westcode diodes
    Text: WESTCODE An Date: 13th January 2010 Issue: 2 IXYS Company Application note for device mounting instructions Introduction This document outlines the minimum mounting conditions for Westcode high power press-pack diodes, thyristors, GTO’s and IGBT’s. Recommendations for interface properties


    Original
    PDF

    Press pack IGBT Toshiba

    Abstract: press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200
    Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package · Anti-parallel fast recovery diode in this package


    Original
    ST1200FXF21 Press pack IGBT Toshiba press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200 PDF

    Press pack IGBT Toshiba

    Abstract: transistor bipolar
    Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package


    Original
    ST1200FXF21 Press pack IGBT Toshiba transistor bipolar PDF

    Press pack IGBT Toshiba

    Abstract: No abstract text available
    Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package


    Original
    ST1200FXF21 20max 68max 120max Press pack IGBT Toshiba PDF

    IGBT presspack

    Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E
    Text: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single


    Original
    C0030BG400 C0030BG400, 100kV/ IGBT presspack IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E PDF

    IGBT 1500

    Abstract: 0609 diode IGBT abb stakpak
    Text: VCE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNR 13H2500 Doc. No. 5SYA1517-02 May. 04 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original
    13H2500 5SYA1517-02 CH-5600 IGBT 1500 0609 diode IGBT abb stakpak PDF

    stakpak

    Abstract: abb press-pack igbt 20H2500 IGBT abb stakpak 5SNX 20H2500 igbt 3 KA 5SNX
    Text: VCE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNX 20H2500 preliminary Doc. No. 5SYB 0116-03 June 04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,


    Original
    20H2500 CH-5600 stakpak abb press-pack igbt 20H2500 IGBT abb stakpak 5SNX 20H2500 igbt 3 KA 5SNX PDF

    stakpak

    Abstract: 5SNX abb press-pack igbt press-pack igbt EN-50124 IGBT abb stakpak
    Text: VCE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNX 13H2500 preliminary Doc. No. 5SYB 0115-02 May.04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,


    Original
    13H2500 CH-5600 stakpak 5SNX abb press-pack igbt press-pack igbt EN-50124 IGBT abb stakpak PDF

    ABB IGBT

    Abstract: press-pack igbt
    Text: VCE IC = = 2500 V 1000 A ABB StakPak H Series Press-pack IGBT 5SNR 10H2500 Doc. No. 5SYA1580-02 May. 04 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original
    10H2500 5SYA1580-02 CH-5600 ABB IGBT press-pack igbt PDF

    stakpak

    Abstract: 5SNX stakpak igbt abb press-pack igbt press-pack igbt IGBT abb IGBT abb datasheets igbt 3 KA VCC-1500
    Text: VCE IC = = 2500 V 1000 A ABB StakPak H Series Press-pack IGBT 5SNX 10H2500 preliminary Doc. No. 5SYB 0114-02 May. 04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,


    Original
    10H2500 CH-5600 stakpak 5SNX stakpak igbt abb press-pack igbt press-pack igbt IGBT abb IGBT abb datasheets igbt 3 KA VCC-1500 PDF

    abb press pack igbt

    Abstract: 5SNA ABB 240 IGBT abb
    Text: VCE IC = = 2500 V 700 A IGBT Press pack 5SNA 0700D250003 • • • • • • • Doc. No. 5SYA1504-02 Apr.01 Low on-state voltage drop Integrated heat sink Short Circuit rated Highly rugged switching SOA Low forward voltage High Voltage, high current capability


    Original
    0700D250003 5SYA1504-02 prEN50124-1 CH-5600 abb press pack igbt 5SNA ABB 240 IGBT abb PDF

    abb press-pack igbt

    Abstract: 20H2501 IGBT abb stakpak EN-50124
    Text: V CE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNR 20H2501 PRELIMINARY Doc. No. 5SYA1582-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original
    20H2501 5SYA1582-03 20H2501 CH-5600 abb press-pack igbt IGBT abb stakpak EN-50124 PDF

    abb press-pack igbt

    Abstract: MM236
    Text: V CE IC = = 2500 V 1000 A ABB StakPak H Series Press-pack IGBT 5SNR 10H2501 PRELIMINARY Doc. No. 5SYA1580-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original
    10H2501 5SYA1580-03 20H2501 CH-5600 abb press-pack igbt MM236 PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original
    12N4501 CH-5600 abb press-pack igbt PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1640-00 Mar 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original
    12L2511 5SYA1640-00 CH-5600 abb press-pack igbt PDF

    abb press-pack igbt

    Abstract: MM236 IGBT abb stakpak 16UM-5 EN50124-1
    Text: V CE IC = = 2500 V 1300 A ABB StakPak H Series Press-pack IGBT 5SNR 13H2501 PRELIMINARY Doc. No. 5SYA1517-03 Mar. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original
    13H2501 5SYA1517-03 20H2501 CH-5600 abb press-pack igbt MM236 IGBT abb stakpak 16UM-5 EN50124-1 PDF

    abb press pack igbt

    Abstract: 1300H250003 abb press-pack igbt IGBT abb datasheets series connection of igbt IGBT abb k 2500 equivalent
    Text: VCE IC = = 2500 V 1300 A IGBT Press pack 5SNA 1300H250003 PRELIMINARY • • • • • • • • Doc. No. 5SYA1514-03 Apr.01 Low on-state and forward voltage drop High Voltage, high current capability Short Circuit rated Highly rugged switching SOA High clamping force allowed 70 kN


    Original
    1300H250003 5SYA1514-03 prEN50124-1 CH-5600 abb press pack igbt 1300H250003 abb press-pack igbt IGBT abb datasheets series connection of igbt IGBT abb k 2500 equivalent PDF

    abb press-pack igbt

    Abstract: 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original
    12N4507 5SYA1626-03 sp4507 CH-5600 abb press-pack igbt 5slx12n4506 PDF

    abb press-pack igbt

    Abstract: 12L2516
    Text: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original
    12L2516 CH-5600 abb press-pack igbt 12L2516 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide


    Original
    12N4500 CH-5600 PDF

    McMurray

    Abstract: press-pack igbt IGBT 5kV IGBT heater control circuit SCHEMATIC POWER SUPPLY WITH IGBTS GTO thyristor driver 5KV fast recovery DIODE commutation circuit for inverter gct thyristor IGBT 3kv
    Text: POWER DIODES New Extra Fast Soft Recovery Diodes and their Applications The advent of press-pack technology for IGBTs and GCTs highlighted the need for a discrete fast recovery diode capable of operating at high commutation rates with low reverse recovery current and soft recovery behaviour. A


    OCR Scan
    PDF