PTF210301A
Abstract: PTF210301E
Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210301A
PTF210301A
30-watt,
PTF210301E
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PTF210301E
Abstract: No abstract text available
Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation
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PTF210301E
PTF210301F
PTF210301E
PTF210301F
30-watt,
PTF210301F*
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PTF210301E
Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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Original
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PTF210301
PTF210301
PTF210301E
marking us capacitor pf l1
PTF210301A
DD 127 D TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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Original
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PDF
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PTF210301
PTF210301
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