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    Infineon Technologies AG PTF210301E V1

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    PTF210301E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF210301E Infineon Technologies LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Original PDF

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    PTF210301E

    Abstract: No abstract text available
    Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation


    Original     		PDF PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*

    PTF210301E

    Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301 PTF210301E marking us capacitor pf l1 PTF210301A DD 127 D TRANSISTOR

    PTF210301A

    Abstract: PTF210301E
    Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301A PTF210301A 30-watt, PTF210301E

    Untitled

    Abstract: No abstract text available
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301