Q67040S4351 Search Results

Q67040S4351 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Q67040-S4351		Infineon Technologies	Cool MOS Power Transistor		Original	PDF

Q67040S4351 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
06N80C3 Abstract: 06N80 Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80
06n80c3 Abstract: SPA06N80C3 Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3
06n80c3 Abstract: SPP06N80C3 06n80 Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80
Q67040-S4351 Abstract: SPP06N80C2 Text: Preliminary data SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 900 mW · Extreme dv/dt rated	Original	PDF	SPP06N80C2 P-TO220-3-1 Q67040-S4351 Q67040-S4351 SPP06N80C2
Untitled Abstract: No abstract text available Text: Target data sheet SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated R DS on 900 mW · Extreme dv/dt rated	Original	PDF	SPP06N80C2 P-TO220-3-1 Q67040-S4351
Untitled Abstract: No abstract text available Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
06N80C3 Abstract: Q67040-S4351 SPP06N80C3 Text: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated	Original	PDF	SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3
06N80C3 Abstract: No abstract text available Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06N80C3
SPP06N80C3 Abstract: 06N80C3 Text: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	PDF	SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 SPP06N80C3 06N80C3
06n80c3 Abstract: Q67040-S4351 SPA06N80C3 SPP06N80C3 06n80 CTJ720 Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 Q67040-S4351 SPA06N80C3 SPP06N80C3 06n80 CTJ720
06N80C3 Abstract: 06n80 P-TO220-3-31 Q67040-S4435 06n8 Q67040-S4351 SPA06N80C3 SPP06N80C3 q67040s4351 spa06n Text: SPP06N80C3 SPA06N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 06n80 P-TO220-3-31 Q67040-S4435 06n8 Q67040-S4351 SPA06N80C3 SPP06N80C3 q67040s4351 spa06n