Untitled
Abstract: No abstract text available
Text: bbS3T 31 QQ27t17a OTS W A P X N AUER PHILIPS/DISCRETE b^E D 7 JC549 JC550 v SILICON PLANAR EPITAXIALl TRANSISTORS NPN transistors in plastic TO-92 variants, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
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QQ27t17a
JC549
JC550
JC549B
JC550B
JC549C
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117400BSJ/BST-60/70
TC5117400BSJ/BST
300mil)
DR16040794
00E7t
SOJ26-P-300C)
BST60
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Untitled
Abstract: No abstract text available
Text: Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations LH1465AB/AAE ISDN dc Termination IC Features Description • ANSI U-DSL compatible The LH1465 ISDN dc Termination IC is used on liinterface digital subscriber lines U-DSL and pro
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LH1465AB/AAE
LH1465
LH1465
6N139
S97-414ISD
S93-015H
DA95-031ISDN)
QQ27t
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BLY90
Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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711002b
BLY90
T-33-13
7z67566
BLY90
Wf VQE 23 F
WE VQE 23 E
wf vqe 23
WF VQE 11 E
WF VQE 23 E
WE VQE 11 E
IEC134
philips Trimmer 60 pf
WF VQE 23 D
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