Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
Voltage050
LQS2W221MELB30
LQS2W221MELC25
LQS2W271MELA50
LQS2W271MELB35
LQS2W271MELC30
LQS2W331MELB40
LQS2W331MELC35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
120Hz
8100X
|
PDF
|
inverter LS600-4005
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
120Hz
120Hz
8100B
inverter LS600-4005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
VoltageMELC40
LQSW6561MELC45
LQSW6681MELC50
LQS2W331MELB40
LQS2W331MELC35
LQS2W391MELB50
LQS2W391MELC40
LQS2W471MELC45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2011/65/EU)
120Hz,
LQSW6331MELA50
LQSW6331MELB35
LQSW6331MELC30
LQSW6391MELB40
LQSW6391MELC35
LQSW6471MELB45
LQSW6471MELC40
LQSW6561MELC45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
120Hz
120Hz
8100Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
120Hz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2011/65/EU)
120Hz,
Voltage050
LQS2W221MELB30
LQS2W221MELC25
LQS2W271MELA50
LQS2W271MELB35
LQS2W271MELC30
LQS2W331MELB40
LQS2W331MELC35
|
PDF
|
LQS2V121MELZ25
Abstract: LQS2V151MELZ30 LQS2V181MELA25 LQS2V181MELZ30 capacitor 680 uF 400v inverter LS600-4005
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler
|
Original
|
2002/95/EC)
120Hz,
LQS2W271MELA50
LQS2W271MELB35
LQS2W271MELC30
LQS2W331MELB40
LQS2W331MELC35
LQS2W391MELB50
LQS2W391MELC40
LQS2W471MELC45
LQS2V121MELZ25
LQS2V151MELZ30
LQS2V181MELA25
LQS2V181MELZ30
capacitor 680 uF 400v
inverter LS600-4005
|
PDF
|
capacitor 2.2 uf 350v
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.
|
Original
|
2002/95/EC)
120Hz,
120Hz
8100U
capacitor 2.2 uf 350v
|
PDF
|
capacitor 2.2 uf 350v
Abstract: capacitor 470 uF 400v LQSW6681MELC50
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.
|
Original
|
2002/95/EC)
120Hz,
120Hz
8100U-1
capacitor 2.2 uf 350v
capacitor 470 uF 400v
LQSW6681MELC50
|
PDF
|
capacitor 470 uF 400v
Abstract: LQSW6681MELC50 LQS2V121MELZ25 LQS2V151MELZ30 LQS2V181MELA25 LQS2V181MELZ30
Text: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.
|
Original
|
2002/95/EC)
120Hz,
LQSW6331MELB35
LQSW6331MELC30
LQSW6391MELB40
LQSW6391MELC35
LQSW6471MELB45
LQSW6471MELC40
LQSW6561MELC45
LQSW6681MELC50
capacitor 470 uF 400v
LQSW6681MELC50
LQS2V121MELZ25
LQS2V151MELZ30
LQS2V181MELA25
LQS2V181MELZ30
|
PDF
|
qs865a
Abstract: QS862A cps6000 lineage power rectifier -48v QS863A QS861A cps6000 20A Rectifier QS865 QS850 CC109129730
Text: Data Sheet January 2009 CPS6000 QS Series Rectifiers 42 to 58 Vdc Output Features § 2U height § Vertical forcedair cooled with variable speed fans § Constant power Applications QS Series Rectifiers § Wireless networks
|
Original
|
CPS6000
QS861A
QS852A
QS862A
QS853A
QS864A
QS865A
CPS6000
5A/30A
QS862A,
qs865a
QS862A
cps6000 lineage power rectifier -48v
QS863A
QS861A
20A Rectifier
QS865
QS850
CC109129730
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • 4055452 GD1MS22 ATI ■ INR H Ü _ IRC530 W Q. CO Q. E E < c0 < ca> D O C ‘cvö _ Q O ç ’S a _ a 10° 10 1 V qs, Drain-to-Source Voltage volts) DATA SHEETS Q 101 V qs, Drain-to-Source Voltage (volts)
|
OCR Scan
|
GD1MS22
IRC530
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL VERTICAL D-MOSFETS ratinas typ number V DS max. V Ptot1) max. (mW) _ V QS(th) R DS(on) max. (mA) min. (V) max. (V) max.
|
OCR Scan
|
OT223
BS208
BS250
BSP204
BSP254
|
PDF
|
diode IN457
Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September
|
OCR Scan
|
MIL-S-19500/193C
1N457,
1N458,
1N459
MIL-S-19500
5961-A371)
diode IN457
JYt marking
IC 4011 details
1N457
1N458
1N459
origin semiconductor rectifier
|
PDF
|
FR152
Abstract: FR153 FR154 FR155 FR157 fr152 sep
Text: SEP ELECTRONIC CORP 24E D OOQDD1S 1 • ''J-QS ~ \ S ■ « SEP FR151 thru FR157,R15 SERIES 1.5A FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes DO-15 FEATURES • • • • • Low High Low High Low forward voltage current capability
|
OCR Scan
|
0Q0D15
FR151
FR157
MIL-STD-202,
DO-15
FR152
FR153
FR154
FR155
fr152 sep
|
PDF
|
F 540 NS
Abstract: NSG2563 20A p MOSFET 30V 20A power p MOSFET T4 PN diode xm46
Text: NSG2563 NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced
|
OCR Scan
|
NSG2563
O-254Z
NSG2563
300jisec,
XM46-1158
F 540 NS
20A p MOSFET
30V 20A power p MOSFET
T4 PN diode
xm46
|
PDF
|
toray s10
Abstract: S105T01
Text: PREPARED BY: SPEC. No. DATE: •7ï .c&«mAnô' ED-98106 ¡umili APPROVED BY: DATE: ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION Qs/jP&cci^uiJee, fljw iL /f ,1^% REPRESEÎ OPTO-ELECTRONIC DÏ DEVICE SPECIFICATION FOR MODEL No. SOLID STATE RELAY
|
OCR Scan
|
S105T01
toray s10
|
PDF
|
irf621
Abstract: irf620
Text: N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R qs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
IRF620/621/622/623
IRF620
IRF621
IRF622
IRF623
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs NSG2563 ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced
|
OCR Scan
|
NSG2563
O-254Z
NSG2563
300jisec,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: I«R Data sneet IN T E R N A T IO N A L R E C T IF IE R INTERNATIONAL RECTIFIER QS DE | 4SSS4SS DDD7741 7 | n o . ru-o.G96 T~ z. <T-2- o S30E SERIES 1600-1000 VOLTS RANGE 1050 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS
|
OCR Scan
|
DDD7741
S30E16A
S30E14A
S3DE12B
S30E10B
TjD7744
|
PDF
|
s1bc
Abstract: S15C uu 10.5 120UL
Text: INTERNATIONAL RECTIFIER 1I O R 1i n t e r n a t io n a l " qs D eT| 4055455 D007SÖ5 fl | Data Sheet No. PD-3.118 r e c t if ie r S15C & S15CH SERIES 1200-600 VOLTS RANGE 140 AMP RMS, CENTER GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE
|
OCR Scan
|
d007sÃ
S15CH
T0-209AC
T-25-19
T0-208AD
s1bc
S15C
uu 10.5
120UL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • TO-22OF Lower R qs o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area
|
OCR Scan
|
IRFS840/841/842/843
FS841
|
PDF
|