QED22X
Abstract: QED221 QED222 QED223
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED221 QED222 QED223 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE
|
Original
|
PDF
|
QED221
QED222
QED223
QED22X
880nm
QSD122/123/124
DS300337
QED221
QED222
QED223
|
qed12x
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
|
Original
|
PDF
|
QED121/122/123
QSD122/123/124
QED122
qed12x
|
D880
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
|
Original
|
PDF
|
QED121/122/123
QSD122/123/124
QED122
D880
|
qed12x
Abstract: QED121 QED122 QED123 QSD122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
|
Original
|
PDF
|
QED121/122/123
QSD122/123/124
DS300336
qed12x
QED121
QED122
QED123
QSD122
|
qed12x
Abstract: QSB34 ul217 QED121 QED123UL
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE NOTES: 1. Dimensions for all drawings are in inches (mm).
|
Original
|
PDF
|
QED123UL
UL217
QSB34
qed12x
QSB34
QED121
QED123UL
|
TIP 122 100 V
Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
|
Original
|
PDF
|
QED121/122/123
QSD122/123/124
100021B
TIP 122 100 V
TIP 122 transistor
QED121
QED122
QED123
qsd122
|
QED121
Abstract: QED123 Fairchild 902 QED122
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
|
Original
|
PDF
|
QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
QED121
Fairchild 902
|
Untitled
Abstract: No abstract text available
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
|
Original
|
PDF
|
QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
|
L14LOI
Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Text: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)
|
OCR Scan
|
PDF
|
QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
L14LOI
l14lti
QSC11X
H23LOI
QSD12X
QSD72X
H23LOB
|
QSD12X
Abstract: No abstract text available
Text: [«xa PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES Tight production distribution. Steel lead fram es for im proved reliability in solder
|
OCR Scan
|
PDF
|
QSD122/123/124
QSD12X
QED123/
|
Untitled
Abstract: No abstract text available
Text: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES • Tight production distribution. ■ Steel lead frames for improved reliability in solder
|
OCR Scan
|
PDF
|
QSD122/123/124
QSD12X
QED123/
|
Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES AIGaAs Infrared Emitting Diode QED223 DESCRIPTION The QED223 is an 880 AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution with 3:1 min/max ratio. • Steel lead frames for improved
|
OCR Scan
|
PDF
|
QED223
QED223
QSD12X
635mm}
635mm)
C621A
|
Untitled
Abstract: No abstract text available
Text: G aA s INFRARED EMITTING DIODE OPTOELECTRONICS QED233/234 PACKAGE DIMENSIONS DESCRIPTION The QED23X is a 940nm GaAs LED encapsulated in a clear plastic T-1% package. FEATURES Tight production Eedistribution. Steel lead frames for improved reliability in solder
|
OCR Scan
|
PDF
|
QED233/234
QED23X
940nm
QSD12X
ST2134
000bE77
0ED233/234
|
QED221
Abstract: QED222 880nm
Text: LËU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED221/222 PACKAGE DIMENSIONS DESCRIPTION The QED22X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution. ■ Steel lead frames for improved reliability in solder
|
OCR Scan
|
PDF
|
QED221/222
QED22X
880nm
QSD12X
ST2133
QED222
mW/10Â
67mW/Â
QED221
|
|
|
H23LOI
Abstract: H23LOB L14LOI
Text: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)
|
OCR Scan
|
PDF
|
QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOI
H23LOB
L14LOI
|
Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED233/234 DESCRIPTION PACKAGE DIMENSIONS T h e Q E D 2 3 X is a 9 40nm GaAs LED en capsulated in a clear plastic T-1% package. FEATURES • Tight production E„ distribution. ■ Steel lead fram es for im proved reliability in solder
|
OCR Scan
|
PDF
|
QED233/234
QSD12X
ST2134
|
H23LOB
Abstract: No abstract text available
Text: OPTOELECTRONICS P a rt N u m b e r!2 MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor F a m ily Test C o n d itio n s LED F a m ily B V ceo u n its V ) m in mA 30 lc (O N ) I f /V c e <D(1) m in m ax Phototransistor/LED Pairs QPA1223 L14PX F5DX 20 mA/5V/.250”
|
OCR Scan
|
PDF
|
QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOB
|
SEC TIP 127
Abstract: QEA123
Text: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara m eter Emission A ngle a t Vi Power T est C ondi tions Peak W avelength A pertured R adiant Incidence If If = 20 m A
|
OCR Scan
|
PDF
|
74bfcjflSl
QEA123
QEA223
QEB123
QEB223
QEC113
QEC123
QED123
QED223
QED233
SEC TIP 127
|
Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLO GIES CORP 3flE D B 74bbô51 G G G 3 ei3e] b E3ÖTY PHOTOSENSORS Characteristics at 25° C Part Number QSA122 QSA123 QSA124 QSA223 QSA224 QSB113 QSB114 QSB213 QSB214 QSC112 QSC113 QSC114 QSD122 QSD123 QSD124 QSD422 QSD423 QSD424 QSD613 QSD614
|
OCR Scan
|
PDF
|
QSA122
QSA123
QSA124
QSA223
QSA224
QSB113
QSB114
QSB213
QSB214
QSC112
|