RAYTHEON
Abstract: LL1608-FH5N6S RMPA0913C-58
Text: R aytheon Commercial E lectronics RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/ CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip
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RMPA0913C-58
RMPA0913C-58
RAYTHEON
LL1608-FH5N6S
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RM912
Abstract: No abstract text available
Text: RM912 Power Amplifier Module, 3–4 Volts, for CDMA/AMPS 824–849 MHz Distinguishing Features The RM912 dual-mode Code Division Multiple Access (CDMA)/Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully matched 6-pin surface mount module designed for mobile units operating in the 824-849 MHz cellular bandwidth.
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RM912
RM912
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SKY85703
Abstract: SKY77758
Text: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7
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BRO399-14B
SKY85703
SKY77758
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RF MODULE CIRCUIT DIAGRAM for channel 4
Abstract: CDMA2000-1X CDMA2000-1XRTT RMPA0959
Text: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a
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RMPA0959
CDMA2000-1X
RMPA0959
CDMA2000-1X
28dBm
31dBm
RF MODULE CIRCUIT DIAGRAM for channel 4
CDMA2000-1XRTT
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SN83
Abstract: d603
Text: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a
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RMPA0959
CDMA2000-1X
RMPA0959
28dBm
31dBm
SN83
d603
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CDMA2000-1X
Abstract: CDMA2000-1XRTT RMPA0959 G-507 D603
Text: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes ■ 39% CDMA efficiency at +28dBm average output power ■ 53% AMPS mode efficiency at +31dBm output power
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RMPA0959
CDMA2000-1X
28dBm
31dBm
CDMA2000-1XRTT
RMPA0959
G-507
D603
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CDMA2000-1X
Abstract: CDMA2000-1XRTT RMPA0959
Text: RMPA0959 CDMA and CDMA2000-1X Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a
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RMPA0959
CDMA2000-1X
RMPA0959
CDMA2000-1X
28dBm
31dBm
CDMA2000-1XRTT
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PDF
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RM806-14
Abstract: IS-136 RM806
Text: RM806 Power Amplifier Module 3–4 V for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount module designed for Time Division Multiple Access (TDMA) and Advanced Mobile Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth.
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RM806
RM806
IS-136
RM806-14
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IS-136
Abstract: RM806 ESD process
Text: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply
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RM806
RM806
IS-136
ESD process
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IS-136
Abstract: RM806
Text: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply
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RM806
RM806
IS-136
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PID code for DC Motor control lpc1768
Abstract: ARM LPC1768 assembly codes LPC1768 21041AA lpc1768 qei encoder language example sch 5127 RBS ericsson software UM10360 LT 5212 lpc23xx
Text: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 00.07 — 31 July 2009 R R R LPC17xx User manual D D D UM10360 D FT FT A A R R D D D R A FT D R A Document information
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LPC17xx
UM10360
LPC1768,
LPC1766,
LPC1765,
LPC1764,
LPC1758,
LPC1756,
LPC1754,
LPC1752,
PID code for DC Motor control lpc1768
ARM LPC1768 assembly codes
LPC1768
21041AA
lpc1768 qei encoder language example
sch 5127
RBS ericsson software
UM10360
LT 5212
lpc23xx
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PDF
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RM806-14
Abstract: IS-136 RM806
Text: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply
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RM806
RM806
IS-136
RM806-14
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SOT262
Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Text: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348
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BLF346
BLF348
OT-119,
OT-262,
BLF276
BLF278
BLF248
BLF368
BLF378
OT-119D3,
SOT262
power amplifier blf278
BGY47
321 SOT
BGY145
sot183
BGY43
SOT246
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BGY95B
Abstract: IG17 BGY95A
Text: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,
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BGY95A/B
BGY95
BGY95A
BGY95B
BGY95A
BGY95B
IG17
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transistor packing code M.R
Abstract: SOT-25 RF detect TS823 TS825
Text: TAIWAN E SEMICONDUCTOR pb RoHS CO M PLIANCE TS823/824/825 Series Microprocessor Supervisory Circuit with Watchdog Timer & Manual Reset SOT-25 5 4 1 23 General Description The TS823/824/825 fam ily allows the user to customize the CPU monitoring function without any external
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TS823/824/825
OT-25
transistor packing code M.R
SOT-25 RF detect
TS823
TS825
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PDF
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TH653
Abstract: No abstract text available
Text: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400
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T0-220
2SD1022
2SB1282
TH653
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N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.
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OT-363
OT-363
VQFN-16-2
SCT-598
N-Channel, Dual-Gate FET
CF750
GaAs pHEMT Low Noise MMIC Amplifier sot-343
N-channel dual-gate GaAs MESFET
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BGY95A
Abstract: MCA8 BGY95B ca712 p SOT200 BGY95 bs33
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3^31 QQ3G247 bl2 I IAPX BGY95A/B J UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,
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DQ30247
BGY95A/B
BGY95
BGY95A
BGY95B
BGY95A
BGY95B
MCA8
ca712 p
SOT200
bs33
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,
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bbS3T31
QD3D247
BGY95A/B
BGY95
BGY95A
BGY95B
bb53R31
D03D255
BGY95A
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PDF
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier
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AD824
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PDF
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bgy 53
Abstract: MCA7
Text: BGY96A/B UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,
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BGY96A/B
BGY96
BGY96A
BGY96B
BGY96A
7Z21S63
bgy 53
MCA7
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,
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bb53T31
0Q3055b
BGY96A/B
BGY96
BGY96A
BGY96A
BGY96B
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PDF
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VS1M
Abstract: BGY96A BGY96B
Text: N AMER PHILIPS /DI SCRETE b'ìE D • bbS3T31 0D3G5Sb bSS ■ APX BGY96A/B JL UHF AMPLIFIER MODULE The BG Y96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,
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OCR Scan
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bbS3T31
0Q3G55b
BGY96A/B
BGY96
BGY96A
BGY96B
BGY96A
BGY96B
VS1M
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PDF
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BGY116a
Abstract: fo-57C BGY114E
Text: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and
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BGY110G
BGY95A
BGY95B
BGY96B
BGY114A
BGY114B
BGY114C
BGY114D
BGY114E
BGY116A
fo-57C
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