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    rjh60f5

    Abstract: RJH60F5DPQ-A0 RJH60F5D rjh60f5dpq RJH60F rjh60f5dpqa0 PRSS0003ZH-A RJH60 r07ds0326ej
    Text: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0200 PRSS0003ZH-A O-247A) rjh60f5 RJH60F5DPQ-A0 RJH60F5D rjh60f5dpq RJH60F rjh60f5dpqa0 PRSS0003ZH-A RJH60 r07ds0326ej PDF

    Rjh60f5

    Abstract: RJH60F5DPQ r07ds0326ej
    Text: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0200 PRSS0003ZH-A O-247A) Rjh60f5 RJH60F5DPQ r07ds0326ej PDF

    RJH60F5

    Abstract: RJH60F5DPQ-A0
    Text: Preliminary Datasheet RJH60F5DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0326EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0100 PRSS0003ZH-A O-247A) RJH60F5 RJH60F5DPQ-A0 PDF