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    R12E Price and Stock

    ROHM Semiconductor MNR12ERAPJ153

    RES ARRAY 2 RES 15K OHM 0606
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    DigiKey MNR12ERAPJ153 Cut Tape 6,746 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.00829
    • 10000 $0.00829
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    MNR12ERAPJ153 Digi-Reel 6,746 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.00829
    • 10000 $0.00829
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    MNR12ERAPJ153 Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00586
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    ROHM Semiconductor MNR12ERAPJ222

    RES ARRAY 2 RES 2.2K OHM 0606
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MNR12ERAPJ222 Cut Tape 1,726 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.00829
    • 10000 $0.00829
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    MNR12ERAPJ222 Digi-Reel 1,726 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.00829
    • 10000 $0.00829
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    ROHM Semiconductor MNR12ERAPJ224

    RES ARRAY 2 RES 220K OHM 0606
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MNR12ERAPJ224 Digi-Reel 359 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.0114
    • 10000 $0.0114
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    MNR12ERAPJ224 Cut Tape 359 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.0114
    • 10000 $0.0114
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    ROHM Semiconductor MNR12ERAPJ104

    RES ARRAY 2 RES 100K OHM 0606
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MNR12ERAPJ104 Cut Tape 235 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.0142
    • 10000 $0.0142
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    MNR12ERAPJ104 Digi-Reel 235 1
    • 1 $0.1
    • 10 $0.026
    • 100 $0.0142
    • 1000 $0.0142
    • 10000 $0.0142
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    APEM Inc Q12P1BXXR12E

    INDICATOR 12V 12MM PROMINENT RED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Q12P1BXXR12E Bulk 127 1
    • 1 $17.47
    • 10 $17.47
    • 100 $17.47
    • 1000 $10.3875
    • 10000 $10.3875
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    Find more R12E price and stock on Findchips.com

    R12E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R10F resistor

    Abstract: resistor array 10k dip SMD r2f pot B 10K ohm 5 pin SMD R10C smd R2C SMD r1f R10B SMD CODE smd R2D smd R3a
    Text: 5 4 3 2 1 CA4D 100pF 5 7 +3V TP9 +3V D 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 D R22A R22B R22C R22D R22E R22F R22G R22H R11A R11B R11C R11D R11E R11F R11G R11H R12A R12B R12C R12D R12E R12F R12G R12H 220 220 220 220 220 220 220 220 220 220 220 220


    Original     		PDF 100pF PE9701 LV142MLN M3500-2032 OSC-3A0-10MHz R10F resistor resistor array 10k dip SMD r2f pot B 10K ohm 5 pin SMD R10C smd R2C SMD r1f R10B SMD CODE smd R2D smd R3a

    R2h DIODE

    Abstract: R22F Modco LV142MLN r1a 10k smd diode M4 Modco R11-F SW DIP-8 R2d DIODE smd diode S2
    Text: 5 4 3 2 1 CA4D 100pF 5 7 +3V TP9 +3V D 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 D R22A R22B R22C R22D R22E R22F R22G R22H R11A R11B R11C R11D R11E R11F R11G R11H R12A R12B R12C R12D R12E R12F R12G R12H 220 220 220 220 220 220 220 220 220 220 220 220


    Original     		PDF 100pF PE9702 LV142MLN M3500-2032 OSC-3A0-10MHz R2h DIODE R22F Modco LV142MLN r1a 10k smd diode M4 Modco R11-F SW DIP-8 R2d DIODE smd diode S2

    M6 SMD MARKING CODE

    Abstract: SMD marking code R1D smd diode marking M4 SMA transistor SMD R1D marking R1E marking R2D smd codes marking c9 R2h DIODE smd marking m4 diode SMD MARKING CODE d6
    Text: 5 4 3 2 1 CA4D 100pF 5 7 +3.3V TP9 +3.3V D 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 D R22A R22B R22C R22D R22E R22F R22G R22H R11A R11B R11C R11D R11E R11F R11G R11H R12A R12B R12C R12D R12E R12F R12G R12H 220 220 220 220 220 220 220 220 220 220 220


    Original     		PDF 100pF PE97022 LV142MLN M3500-2032 OSC-3A0-20MHz M6 SMD MARKING CODE SMD marking code R1D smd diode marking M4 SMA transistor SMD R1D marking R1E marking R2D smd codes marking c9 R2h DIODE smd marking m4 diode SMD MARKING CODE d6

    R2h DIODE

    Abstract: smd diode code u6 92121 dip8 SMD r2f PE3336 R2d DIODE Modco LV142MLN R3F SMD SMD R1D
    Text: 5 4 3 2 1 CA4D 100pF 5 7 +3V TP9 +3V D 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 D R22A R22B R22C R22D R22E R22F R22G R22H R11A R11B R11C R11D R11E R11F R11G R11H R12A R12B R12C R12D R12E R12F R12G R12H 220 220 220 220 220 220 220 220 220 220 220 220


    Original     		PDF 100pF PE3336 LV142MLN M3500-2032 OSC-3A0-10MHz R2h DIODE smd diode code u6 92121 dip8 SMD r2f R2d DIODE Modco R3F SMD SMD R1D

    P55i

    Abstract: HY29F040A P12-I
    Text: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands


    Original     		PDF HY29F040A P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E, R-90E 120ns P55i P12-I

    schematic diagram crt tv samsung

    Abstract: PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc
    Text: This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams P30 7-1 7 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.


    Original     		PDF CSP32/64 M9/M10 NC7ST32M5_ HSDL-3602 27MHZ XTAL-32KHz XTAL-24 30PPM schematic diagram crt tv samsung PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc

    HY29F200

    Abstract: HY29F200B HY29F200T
    Text: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and


    Original     		PDF HY29F200T/B 48-Pin HY29F200 16-Bit) G-70I, T-70I R-70I G-70E, T-70E, R-70E HY29F200B HY29F200T

    Untitled

    Abstract: No abstract text available
    Text: HY29F040 Series 512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 90 ns access time • Low Power Consumption - 20 mA typical active read current


    Original     		PDF HY29F040 32-Pin P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E,

    Untitled

    Abstract: No abstract text available
    Text: 280 Series F ea t u r e s • Also available in low cost Centohm or Silicone coating. Consult Ohmite. • Ribbed construction aids in rapid cooling. • Designed for equipment requiring low resistance loads at low ohmic values and high current capacity. • Especially constructed for motor


    Original     		PDF 1974-B 1-866-9-OHMITE

    transistor SMD 352a

    Abstract: capacitor 33j 6kv 12w SOT 23 package marking code smd transistor marking 12W 33J 6KV smd 352A 25 ohm 3 watt rheostat United Chemi-Con SME series United Chemi-Con KMC capacitor 6kv 22j
    Text: POWER RESISTORS CURRENT SENSE HIGH VOLTAGE HIGH ENERGY HEAT SINKABLE SURFACE MOUNT COMPONENT SELECTOR 4000G Revised July 16, 2010 1600 Golf Road, Suite 850 | Rolling Meadows, IL 60008 Phone: 866-964-6483 Fax: 847-574-7522 ohmite.com email: sales@ohmite.com


    Original     		PDF 4000G MIL-R-22 MIL-R-26 RW20V RW21V RW22V RW23V RW24V RW29V/N transistor SMD 352a capacitor 33j 6kv 12w SOT 23 package marking code smd transistor marking 12W 33J 6KV smd 352A 25 ohm 3 watt rheostat United Chemi-Con SME series United Chemi-Con KMC capacitor 6kv 22j

    1R2E

    Abstract: No abstract text available
    Text: 280 Series F ea t u r e s Corrib resistors are ideal for applications involving high currents at very low resistance values—as low as 0.1Ω for the 300 Watt unit. These large, heavy-duty resistors are designed to withstand frequent start-stop cycles characteristic


    Original     		PDF 1R25E 1974-B 1-866-9-OHMITE 1R2E

    Untitled

    Abstract: No abstract text available
    Text: Corrib resistors are ideal for applications involving high currents at very low resistance values—as low as 0.1Ω for the 300 Watt unit. These large, heavy-duty resistors are designed to withstand frequent start-stop cycles characteristic of motor starting, dynamic


    Original     		PDF 1-866-9-OHMITE

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 280 Series •฀ Also฀available฀in฀low฀cost฀ Centohm฀or฀Silicone฀coating.฀ Consult฀Ohmite. •฀ Ribbed฀construction฀aids฀in฀rapid฀ cooling. •฀ ฀


    Original     		PDF 974-Aà 1974-B 1-866-9-OHMITEà

    Untitled

    Abstract: No abstract text available
    Text: HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 120 ns access time · Compatible with JEDEC-Standard Commands


    Original     		PDF HY29F040 32-Pin 120ns P-12I, T-12I, R-12I P-12E, T-12E, R-12E

    1R2E

    Abstract: R12E R12-E 1210MS
    Text: A fcELM Part Number 1210MS- R12E FS 1210MS- R15E FS 1210MS- R18E FS 1210MS- R22E FS 1210MS- R27E FS 1210MS- R33E FS 1210MS- R39E FS 1210MS- R47E FS 1210MS- R56E FS 1210MS- R68E FS 1210MS- R82E FS 1210MS- 1R0E FS 1210MS- 1R2E FS 1210MS- 1R5E FS 1210MS- 1R8E FS


    OCR Scan     		PDF 1210MS 1210MS- 1R2E R12E R12-E 1210MS

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F040 120ns P-121, T-121, R-121 P-12E, T-12E, R-12E P-151,

    P55i

    Abstract: No abstract text available
    Text: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and


    OCR Scan     		PDF HY29F002 32-Pin HY29F002 P55i

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a


    OCR Scan     		PDF HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I,

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I

    P55i

    Abstract: B0000h-BFFFF
    Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and


    OCR Scan     		PDF 16Kbytes, HY29F800 16-bit 16-bit) P-55I, T-55I, R-551 P-55E, T-55E, P55i B0000h-BFFFF

    Z134

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • S.O V 10% Read, Program, and Erase - Minimizes system-ievel power requirements • High performance - 55 ns access time • Internal Programming Algorithms


    OCR Scan     		PDF HY29F080 G-55I, T-55I, R-55I G-55E, T-55E, R-55E G-70I, T-701, Z134

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I •■ ■ w W 11’1 1 1 HY29F400T/B Series 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • • • • • • 5.0 V 1 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 90 ns access time


    OCR Scan     		PDF HY29F400T/B 48-Pin HY29F400 16-Bit) G-90I, T-90I, R-90I G-90E, T-90E, R-90E

    LR3441

    Abstract: marking code B9 DG SMD Transistor transistor smd sensor 80L transistor bf 175 sdz-370n ccd LZ1032 Transister Data Book
    Text: MOS DATA BOOK General Information Gate Arrays/Standard Cells Display Drivers 3 J T elecommunications II CCDs/CCD Peripherals ICs for Audio/Visual Equipment 6 | Voice/Melody Generators ICs for Clock Others Preface In recent years, the seemingly unlimited progress seen in


    OCR Scan     		PDF LH5047/LH5048 LR3441 marking code B9 DG SMD Transistor transistor smd sensor 80L transistor bf 175 sdz-370n ccd LZ1032 Transister Data Book

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I mm • W ■ * mm ■ « ■ HY29F040 Series 5 1 2 K x 8 _b l t CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V ' 10% Read, Program, and Erase • - Minimizes system-level power requirements • High performance • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F040 32-Pin P-901, C-901, T-901, R-901 P-90E, C-90E, T-90E,