transistor BD 139
Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a
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AT-32063
AT32063
AT-320XX
OT-363
SC-70)
AT-32063,
transistor BD 139
AP 1100 R1
darlington cascode second stage
transistor AT-320 agilent
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darlington cascode second stage
Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors
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AT-32063
AT-32063
AT-320XX
OT-363
SC-70)
AT-32063,
5966-0781E
darlington cascode second stage
transistor AT-320 agilent
Transistor W03 56
A1T TRANSISTOR
d2030
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transistor c 5936 circuit diagram
Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a
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AT-32063
AT-320XX
OT-363
SC-70)
AT-32063,
5966-0781E
transistor c 5936 circuit diagram
c 2073 amplifier circuit diagram
D2030
18 sot-363 rf power amplifier
S2PB
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Untitled
Abstract: No abstract text available
Text: FHR1200 Micro-Power, Ultra Wide Voltage Regulator Features Description • Low Operating Current: 12 A Max. • Option to Direct Drive Feedback Pin on PWM Controllers • Programmable Output: 7.5 V to 100 V • Wide Operating Temperature Range: -55°C to +150°C
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FHR1200
SC70-6
OT363)
FHR1200
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Untitled
Abstract: No abstract text available
Text: FHR1200 Micro-Power, Ultra Wide Voltage Regulator Features Description • Low Operating Current: 12 A Max. • Option to Direct Drive Feedback Pin on PWM Controllers • Programmable Output: 7.5 V to 100 V • Wide Operating Temperature Range: -55°C to +150°C
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FHR1200
SC70-6
OT363)
FHR1200
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Untitled
Abstract: No abstract text available
Text: ASL563 High Gain, Low Noise Amplifier Description Features 33 dB Gain at 900 MHz 1.0 dB NF at 900 MHz Two-stage LNA Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high
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ASL563
ASL563
OT363
OT363
100GHz
800GHz)
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"3 watt led"
Abstract: led constant current driver 700mA MBR140SFT1G LRC-LR1206-01-R200-F 10k resistor 1/4 watt 1206 datasheet 47 uf capacitor led driver pwm 350mA 8 SMT DIODE SOD123 CS51411 CS51413
Text: DN06018/D Design Note – DN06018/D 12V or 24Vin DC, Constant Current LED Driver Device Application Input Voltage Output Power Topology I/O Isolation CS51411 NCV51411 Constant Current LED Driver 12 V or 24 V DC Up to 4 W Buck None Other Specifications Output Voltage
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DN06018/D
24Vin
CS51411
NCV51411
CS51411)
optimized00-F
CRCW06031271F
"3 watt led"
led constant current driver 700mA
MBR140SFT1G
LRC-LR1206-01-R200-F
10k resistor 1/4 watt 1206 datasheet
47 uf capacitor
led driver pwm 350mA 8
SMT DIODE SOD123
CS51411
CS51413
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CMKTC825A
Abstract: CMKTC825E
Text: CMKTC825A CMKTC825E w w w. c e n t r a l s e m i . c o m SURFACE MOUNT TEMPERATURE COMPENSATED SILICON ZENER DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTC825A and CMKTC825E are 6.2 volt, temperature compensated Zener reference diodes. These devices are ideal for
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CMKTC825A
CMKTC825E
CMKTC825A
CMKTC825E
OT-363
CMKTC825A)
CMKTC825E)
13-January
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zener diode mv 13
Abstract: CMKTC825A R5 SOT363 marking 651 sot363 C25E CT25 marking CODE 75C marking code 62 3 pin diode sot363 marking codes 20 diode marking r5
Text: CMKTC825A CMKTC825E SURFACE MOUNT TEMPERATURE COMPENSATED SILICON ZENER DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTC825A and CMKTC825E are 6.2 volt, temperature compensated Zener reference diodes. These devices are ideal for
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CMKTC825A
CMKTC825E
CMKTC825A
CMKTC825E
OT-363
CMKTC825A)
CMKTC825E)
13-January
zener diode mv 13
R5 SOT363
marking 651 sot363
C25E
CT25
marking CODE 75C
marking code 62 3 pin diode
sot363 marking codes 20
diode marking r5
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CMKD6001
Abstract: marking code K01
Text: CMKD6001 SURFACE MOUNT TRIPLE ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy
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CMKD6001
CMKD6001
OT-363
100mA
marking code K01
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CMKD4448
Abstract: No abstract text available
Text: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar
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CMKD4448
OT-363
100mA
13-January
CMKD4448
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3904 TRANSISTOR PNP
Abstract: transistor k46 k46 transistor k46 sot363 marking 3906 TRANSISTOR npn K46 Package marking k04 3904 transistor sot363 marking codes 20 small signal transistor marking codes
Text: CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP SURFACE MOUNT DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-363 CASE FEATURES: • ULTRAmini space saving package • Two NPN 3904 or Two PNP (3906) Transistors in a single package MAXIMUM RATINGS: (TA=25°C)
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CMKT3904
CMKT3906
CMKT3946
CMKT3904
CMKT3906
CMKT3946
OT-363
3904 TRANSISTOR PNP
transistor k46
k46 transistor
k46 sot363 marking
3906 TRANSISTOR npn
K46 Package
marking k04
3904 transistor
sot363 marking codes 20
small signal transistor marking codes
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ensw1
Abstract: No abstract text available
Text: User's Guide SNVA350B – September 2008 – Revised April 2013 AN-1858 LM26484 Power Management Unit Evaluation Board 1 Introduction The LM26484 evaluation board is a working demonstration of two step-down DC-DC converters and an LDO controller. This user's guide helps you make the best use of the LM26484 with your application. For
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SNVA350B
AN-1858
LM26484
SNVS573)
ensw1
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AM417
Abstract: schaltung Mosfet NTJD4105C AN1019 smd mosfet sot-363 6131 c1
Text: Anwendungsbeschreibung AN1019 Ratiometrischer Verpolungsschutz für den AM417 Aufgabenstellung Der Instrumentenverstärker AM417 [1] und eine vorgelagerte Messzelle siehe Abbildung 3 soll bei einer ratiometrischen Versorgung von 5V±5% mit einer kostengünstigen Beschaltung gegen
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AN1019
AM417
AM417
NTJD4105C
OT-363)
schaltung Mosfet
AN1019
smd mosfet sot-363
6131 c1
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smd mosfet sot-363
Abstract: AM417 esd protect mosfet AN1019 p channel de mosfet NTJD4105C complementary mosfet
Text: Application description AN1019 Ratiometric reverse polarity protection for AM417 The task on hand The instrumentation amplifier AM417 [1] and an upstream sensing element see Figure 3 are to be protected against reverse polarity using an inexpensive circuit at a ratiometric supply of 5V
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AN1019
AM417
AM417
NTJD4105C
OT-363)
smd mosfet sot-363
esd protect mosfet
AN1019
p channel de mosfet
complementary mosfet
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Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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CR6332-2512
Abstract: MA2YD2600L MA2YD2600 GRM31CR61C106KC31L HDR13X2 TFML-110-02-S-D GRM32ER61C476ME15L TFM-110-02-XD-LC CR633 3008 so8
Text: National Semiconductor Application Note 1736 Clinton Jensen February 4, 2008 Introduction sibility of accidentally destroying high current LEDs. It connects to the LM3433 evaluation board with the supplied 26 pin ribbon cable. The load board has an adjustable voltage
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LM3433
AN-1736
CR6332-2512
MA2YD2600L
MA2YD2600
GRM31CR61C106KC31L
HDR13X2
TFML-110-02-S-D
GRM32ER61C476ME15L
TFM-110-02-XD-LC
CR633
3008 so8
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Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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SMD ZENER DIODE Z1
Abstract: 1N4937 SMD EF16 TRANSFORMER diode D7 SOD-123 BAT54 on semi IC 2 5/dual transistor 6 pin SMD Z2 NCP1075
Text: DN05038/D Design Note – DN05038/D Non-Isolated, 8 Watt Dual Output, Off-line Power Supply Device Application NCP1075 NST45011 White Goods, Industrial Equipment Input Voltage 180 to 270 Vac Output Power Topology I/O Isolation 8 Watts Nominal Non-Isolated
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DN05038/D
NCP1075
NST45011
NCP1072
SMD ZENER DIODE Z1
1N4937 SMD
EF16 TRANSFORMER
diode D7 SOD-123
BAT54 on semi
IC 2 5/dual transistor 6 pin SMD Z2
NCP1075
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Untitled
Abstract: No abstract text available
Text: PMP5201G; PMP5201Y PNP/PNP matched double transistors Rev. 01 — 14 February 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface Mounted Device SMD plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.
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PMP5201G;
PMP5201Y
OT363
SC-88)
PMP5201G
PMP5201Y
OT353
OT363
SC-88A
SC-88
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NSR15DW1
Abstract: NSR15DW1T1
Text: NSR15DW1 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: http://onsemi.com • Low Capacitance <1 pF • Low VF (390 mV typical @ 1 mA) • Low VFΔ (1 mV typical @ 1 mA)
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NSR15DW1
NSR15DW1/D
NSR15DW1
NSR15DW1T1
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JMK316B7226ML-T
Abstract: erb21b5c2e150jdx1l AN1858 ERB21B5C2E8R2CDX1L power supply woodward ensw1 GRM21BR71A106KE51L LM26480 LM26484SQ DAP 002 regulator
Text: National Semiconductor Application Note 1858 John Woodward November 4, 2009 Application Manual GENERAL DESCRIPTION The LM26484 is a multi-function, configurable Power Management Unit. This device integrates two highly efficient 2.0A step-down DC/DC converters, one LDO Controller, a POR
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LM26484
AN-1858
JMK316B7226ML-T
erb21b5c2e150jdx1l
AN1858
ERB21B5C2E8R2CDX1L
power supply woodward
ensw1
GRM21BR71A106KE51L
LM26480
LM26484SQ
DAP 002 regulator
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT2822/23/24/25 SystemPowerTM TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC
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AAT2822/23/24/25
AAT2822-AAT2825
AAT2822
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ce 2826 ic
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
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MDC5001T1
MDC5000
ce 2826 ic
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