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    RAG SOT23 Search Results

    RAG SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    RAG SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BAS40

    Abstract: AK 1020 DIODE MARKING GU RAG SOT23
    Text: Surface Mount Schottky Barrier Diode BAS40 Features Low Turn-on Voltage Low Forward Voltage - 0.5V Max @ IF = 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit protection A 3 Mechanical Data 1 Case: Molded Plastic


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    BAS40 MIL-STD-202, OT-23 BAS40 AK 1020 DIODE MARKING GU RAG SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: D3D7_FDH6626B D3D7_FDH6626B DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 75 Units V IF AV IFSM Average Rectified Forward Current


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    FDH6626B DO-35 PDF

    1N916B

    Abstract: t 4148 diode
    Text: Symbol TA=25 C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 trr Test Conditions 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time


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    O-35FDLL914Be 1N916A/B/4448 1N914A/B/4148 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 100mA 1N916B t 4148 diode PDF

    do-213D

    Abstract: FAIRCHILD LL4148 SOD80 DIODE LL4148 SOD80 LL4148 signal Diode LL4148-SOD80 LL4148 SOT
    Text: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black 2ND BAND Green SOD80 Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current


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    LL4148 200degrees do-213D FAIRCHILD LL4148 SOD80 DIODE LL4148 SOD80 LL4148 signal Diode LL4148-SOD80 LL4148 SOT PDF

    Optocoupler with triac circuits

    Abstract: sot-23 MARKING CODE ZA General Electric scr SOT-23 LINEAR OPTOCOUPLER optocoupler triac SCR Crowbar how to test triac using volt ohmmeter Optocoupler with triac ac voltage regulator using SCR circuit diagram SCR gate drive circuit
    Text: TLV431A, TLV431B Low Voltage Precision Adjustable Shunt Regulator The TLV431A and B series are precision low voltage shunt regulators that are programmable over a wide voltage range of 1.24 V to 16 V. The TLV431A series features a guaranteed reference accuracy


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    TLV431A, TLV431B TLV431A TLV431B TLV431A/D Optocoupler with triac circuits sot-23 MARKING CODE ZA General Electric scr SOT-23 LINEAR OPTOCOUPLER optocoupler triac SCR Crowbar how to test triac using volt ohmmeter Optocoupler with triac ac voltage regulator using SCR circuit diagram SCR gate drive circuit PDF

    SI3437DV

    Abstract: snubber application note SI3437
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


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    LTC3765 LTC3766 3765fa LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC2722-2 SI3437DV snubber application note SI3437 PDF

    LTC3765

    Abstract: LTC3765EMSE LTC3765MPMSE marking dag BSC0901NS FDMS86201 LTC3766 PA0810 SI3437 48v battery charger schematic diagram
    Text: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for


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    LTC3765 16-Lead LT1952/LT1952-1 LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC2722-2 3765f LTC3765 LTC3765EMSE LTC3765MPMSE marking dag BSC0901NS FDMS86201 LTC3766 PA0810 SI3437 48v battery charger schematic diagram PDF

    dual diode A7 W

    Abstract: No abstract text available
    Text: Small Signal Diodes SOT23 Type Ratings miniBag Order Number Number l RR Max CD Part Marking A6 A8 A841 A82 L20 D01/5D D18 Max Schematic Single Diode BAS 16 BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 72-0016 72-0019 72-0020 72-0021 72-0029 72-0914 72-4150 500 pc.


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    D01/5D BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 BAV70 BAV74 MMBD2838 dual diode A7 W PDF

    Untitled

    Abstract: No abstract text available
    Text: Zener Diode Assortment Kits A A mini min i Ki ts kits 25 V nines Each 25 \ allies Each MLL Series SOD80 ±5% Mini MELF BZX84/MMBZ Series SOT23 ±5 % 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 3.0V 3.3V 3.6V 3.9V 4.3V 4.7V 5.1V 5.6 V 6.0V


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    BZX84/MMBZ PDF

    H R C M F 2J 225

    Abstract: npd556
    Text: DE I Lj3b7554 D0fl2Q30 5 MO T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA SC XSTRS/R F 96D 82038 D _ _ r - 3 7 - / 5 -" M A X IM U M RATINGS U n it Sym bol V a lu e Colle ctor-E m itte r Volta g e V C EO 12 Vdc C o lle cto r-B as e Volta g e VCBO


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    Lj3b7554 D0fl2Q30 MMBT3640 OT-23 O-236AA/AB) H R C M F 2J 225 npd556 PDF

    MMBC1623L3

    Abstract: No abstract text available
    Text: r 7 .SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o §7^ 14 2 0007 am, i | NPN EPITAXIAL SILICON TRANSISTOR — :-T-aa- AMPLIFIER TRANSISTOR - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage


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    000724b MMBC1623L3 OT-23 100mA, 100MHz MMBC1623L3 PDF

    ST MARKING STYLE

    Abstract: D R MARKING
    Text: A CALIFORNIA MICRO DEVICES PAC 27A01 P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications A p p licatio n s • Matched resistor pair


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    OT-23 HIP5020 27A01 AP-202 27A01 PAC27A01T/B PAC27A01T/R OT-23 ST MARKING STYLE D R MARKING PDF

    IN5227

    Abstract: sprague catalog in5257 TMPZ5231 MARKING ato TMPZ5240 MARK 8E diode TMPZ5234 zener diode catalogue TMPZ5229
    Text: itSPfiflGUE THE M A R K OF DIODES » DIODES « DIODES » DIODES « DIODES SERIES TMPZ MICROMINIATURE ZENER DIODES '1 • Series TMPZ consists of standard IN5227 thru IN5257 type diode chips molded in a TO-263AA high-profile orTO-236AB (low profile) package.


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    IN5227 IN5257 O-263AA orTO-236AB O-236AA/TO-236AB Pinning141 T0-236AA/AB TMPZ5253 TMPZ5254 TMPZ5255 sprague catalog TMPZ5231 MARKING ato TMPZ5240 MARK 8E diode TMPZ5234 zener diode catalogue TMPZ5229 PDF

    BC817

    Abstract: BC818 BC818-16L BC817-16L BC817-25L BC817-40L BC818-25L BC818-40L 25L MARKING
    Text: motorola XSTRS/R F sc 1EE D | b3b72SM QGflSaô3 T | M A X I M U M R A T IN G S R ating Colle ctor-E m itte r V oltag e Co llector-B ase V olta g e •t E m itter-Base V olta g e Sym bol BC817 BC818 U n it V cE O 45 25 V VCBO 50 30 V Ve b o 5.0 5.0 V ic 500


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    b3b72SM BC817 BC818 BC817-16L BC818-16L BC817-25L BC818-25L BC817-40L BC818-40L 25L MARKING PDF

    52B zener

    Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
    Text: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =


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    SMBZ5230 SMBZ5257 500mW, OT-23 SMBZ5230B SMBZ5239B SMBZ5248B SMBZ5257B= 595-ISIS 52B zener 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B PDF

    Untitled

    Abstract: No abstract text available
    Text: f Z T S G S - T H O Ä T# is M S O N S03904 U i C T lt g « ! SMALL SIGNAL NPN TRANSISTOR Type Marking S03904 071 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPO SE AMPLIFIER AND


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    S03904 S03904 OT-23 SC06960 OT-23 PDF

    Bt 35 F transistor

    Abstract: Bt 35 transistor
    Text: DE^t.3L,72S4 0 D Ô E D 4 7 3 | ~ M O T O R O L A SC Í X S T R S / R FD6367254 ’ -V * MOTOROLA SC XSTRS/R 96D F i . 82047 R ating Sym bol V alu e v CEO 50 Vdc C o lle ctor-B ase V olta g e V cB O 50 Vdc Em itter-B ase V oltag e VebO 3.0 Vdc ic 50 m Adc


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    FD6367254 MMBT5086 MMBT5087 OT-23 O-236AA/AB) Bt 35 F transistor Bt 35 transistor PDF

    s02907

    Abstract: No abstract text available
    Text: r z T SGS-THOMSON Ä 7# MoramiCTiMffloiei S02907 S02907A SMALL SIGNAL PNP TRANSISTORS Type Marking S02907 P05 S O 2907A P03 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION


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    S02907 S02907A S02907 OT-23 S02907/S02907A OT-23 PDF

    marking H3t sot23

    Abstract: BSR15 marking T7
    Text: r z z SCS-THOM SON Ä T# MDœmiICTfôMIl] BSR15 BSR16 SMALL SIGNAL PNP TRANSISTORS Type Marking BSR15 T7 BSR16 T8 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION


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    BSR15 BSR16 BSR16 BSR13 BSR14 OT-23 BSR15/BSR16 marking H3t sot23 marking T7 PDF

    V2103

    Abstract: V2109
    Text: SILICON EPICAP DIODES . . . designed in the popular P LA S TIC PA CK A G E for high volum e require­ m ents of FM Radio and TV tuning and A FC , general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning m ethods.


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    MV21XX MMBV21XXLT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1* MV2101 MV2103 MV2105 V2103 V2109 PDF

    ks3542

    Abstract: loral pin diodes KV3201 KV38S2 KV31S1 b80 sot23 Alpha Metals
    Text: LORAL/FREÖUENCY/SEMICOND Tb D • 557=^21 0QG0ÖS3 4 ■ ^07- ./ ^ SOT-23 PACKAGED DEVICES FEATURES • • • • For T hick and T hin-Film Circuits Hyperabrupt T un in g Diodes P IN R F Sw itching Diodes L o w Cost M icrom iniature Plastic Package S U G G E S T E D M O U N T IN G M ETHOD


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    OT-23 KS35A2 KS3542 loral pin diodes KV3201 KV38S2 KV31S1 b80 sot23 Alpha Metals PDF

    BD701

    Abstract: BD701 diode
    Text: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . . . d e s ig n e d p r im a rily fo r h ig h -e ffic ie n c y U H F a n d V H F d e te cto r a p p lic a ­ tio n s. R e a d ily a d a p ta b le to m a n y o th e r fa st s w itc h in g R F a n d d ig ita l


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    MBD701 MMBD701LT1 BD701 BD701 diode PDF

    P-Channel JFETs

    Abstract: sst5460 SST5461
    Text: 2N/SST5460 Series VISHAY T Vishay Sil icon ix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number V G S o ff ( V ) V (B R )G S S M i n ( V ) 2 N /S S T 5 4 6 0 0 .7 5 to 6 40 1 -1 2 N /S S T 5 4 6 1 1 to 7.5 40 1.5 -2


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    2N/SST5460 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 S-04030-- 04-Jun-01 P-Channel JFETs PDF

    25CC

    Abstract: G145 TK11819M K1181
    Text: TK11819M SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Package Outline Dimensions/Marking


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    DB3-G145 TK11819M TK11819M. TK1181* QH7-B002. DP3-F016. 25CC G145 TK11819M K1181 PDF