C 34 F
Abstract: 1SV274 D234
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV274
C25V/C28V
470MHz
C 34 F
1SV274
D234
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TIS69
Abstract: TIS70 tis70 texas instruments
Text: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit
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TIS69,
TIS70
TIS69
tis70 texas instruments
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2n5549
Abstract: No abstract text available
Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit
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2N5549
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4328T
Abstract: No abstract text available
Text: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit
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2N4223,
2N4224
4328T
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Untitled
Abstract: No abstract text available
Text: TC74LCX652FS LOW VOLTAGE OCTAL BUS TRANSCEIVER / REGISTER WITH 5V TOLERANT INPUTS AND OUTPUTS Th e T C 7 4 LC X 6 5 2 is a h ig h p arform ance CM O S O C T A L BUS T R A N S C E IV E R / REG ISTER . D e signe d fo r use in 3.3 V o lt system s, it achieves h ig h speed op e ration w h ile
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TC74LCX652FS
10MHz
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Untitled
Abstract: No abstract text available
Text: TLC04/MF4A-50, TLC14/MF4A100 BUTTERWORTH FOURTH-ORDER LOW PASS SWITCHED-CAPACITOR FILTERS D 2 97 0 , NOVEMBER 1 9 8 6 -R E V IS E D NOVEMBER 1988 D OR P PACKAGE Low Clock-to-Cutoff-Frequency Ratio Error T L C 0 4 /M F 4 A -5 0 . . . ± 0 .8 % T L C 1 4 /M F 4 A -1 0 0 . . . ± 1 %
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TLC04/MF4A-50,
TLC14/MF4A100
14/MF4A100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV282
0014g
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SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV277
SV277
SV277
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transistor J1c
Abstract: No abstract text available
Text: HN2V02H SILICON EPITAXIAL PLANAR TYPE TRANSISTOR A M R A D IO B A N D T U N IN G APPLICATIONS. • U n i t in m m • H igh C apacitance Ratio : C 1 V /C 8 V = 19.5 Typ. H igh Q : Q = 200 (Min.) Including Three Devices in FM 8 Package (F lat Pack M ini 8Pin)
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HN2V02H
transistor J1c
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54HC4016
Abstract: n12110 C4016
Text: SN54HC4016, TLC4016I SILICON-GATE CMOS QUADRUPLE BILATERAL ANALOG SWITCH 0 2 9 2 2 . J A N U A R Y 1986 SN 5 4 H C 4 0 1 6 . . . J O R N P A C K A G E TLC4016I . . . D OR N PA C KA G E High Degree of Linearity High On-Off Output Voltage Ratio TOP VIEW Low Crosstalk Between Sw itches
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SN54HC4016,
TLC4016I
TLC4016I
54HC4016
n12110
C4016
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2N5546
Abstract: No abstract text available
Text: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit
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2N5545,
2N5546,
2N5547
2N5546
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TIS129
Abstract: No abstract text available
Text: TYPE TIS129 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 2 0 0 7 , J U N E 1 9 7 3 S IL E C T t V HF/U H F TRANSISTOR* DESIGNED FOR COMMON-BASE OSCILLATOR AND AMPLIFIER APPLICATIONS • Low Cce . . . 0.3 pF Max • Specified Ratio if • High fx . . . 800 MHz Min
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TIS129
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE G T 1 0 J3 1 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd G ration E n h anceme nt- Mode : tf= 0.30/iS M ax. H igh Speed Low S atu ratio n V oltage : V q e (s a t )= 2.7V (M ax.)
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GT10J311
30/iS
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TIL186
Abstract: No abstract text available
Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor
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TIL186-3,
TIL186
E65085
aA186
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)
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1SV245
C2V/C25V
10kS2)
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV276
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Toshiba transistor Ic 100A
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd ration Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e
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GT25Q301
120IG
Toshiba transistor Ic 100A
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marking t6 VARIABLE CAPACITANCE DIODE
Abstract: 1SV211
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV211
C2V/C25V
marking t6 VARIABLE CAPACITANCE DIODE
1SV211
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Untitled
Abstract: No abstract text available
Text: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYRIG H T R E L E A S E D FO R P U B LIC A T IO N A L L R IG H T S R E S E R V E D . BY TYCO ELEC TR O N IC S CO RPO RATIO N. D .D. A C C O M M O D A T E S . 0 4 0 0 + . 0 0 1 5 DIA PIN CONTACT : 0 1 0 MAX C U T - O F F
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Untitled
Abstract: No abstract text available
Text: sse • d flui?a3 ODflbiflfl t SNS4HC4066, TLC4066I SILICQN-GATE CMOS QUADRUPLE BILATERAL ANALOG SWITCH TEXAS INSTR LOGIC 02922, JANUARY 1988 High Degree of Linearity SN64HC4066 . . . J OR N PACKAGE T L C 40 66 I. . . D OR N PACKAG E • High On-Off Output Voltage Ratio
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SNS4HC4066,
TLC4066I
MM54/74HC4066,
MC54/74HC4066,
CD4066A
TLC4066
SN54HC4066,
T-51-11
--V02
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1sv257
Abstract: No abstract text available
Text: TOSHIBA 1SV257 Variable Capacitance Diode U nit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Q Typ. • Useful for Small Size Set A bso lu te M axim um R atings (Ta = 25 C) CHARACTERISTIC R everse V o lta g e
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1SV257
fs470M
1sv257
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1SV304
Abstract: No abstract text available
Text: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV304
1SV304
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sc filter ic mf10
Abstract: TLC20CN MF10C xq200
Text: TLC10/MF10A, TLC20/MF1 OC UNIVERSAL DUAL SWITCHED CAPACITOR FILTER D2952, AUGUST 1 9 8 6 -R E V IS E D NOVEMBER 1988 Maximum Clock to Center-Frequency Ratio Error TLC10 . . i ± 0.6% TLC20 . . . ± 1.5% N DUAL-IN-LINE PA CKAG E TO P VIEW I 1LP □ 1 L J 2 0 ] 2 L P
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TLC10/MF10A,
TLC20/MF1
D2952,
TLC10
TLC20
LTC1060
10/MF
TLC20/MF10C
sc filter ic mf10
TLC20CN
MF10C
xq200
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