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    RCA RF TRANSISTOR Search Results

    RCA RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RCA RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD zener 562

    Abstract: CRCW0603 CRCW1206 D10LR hearing aids CRCW0201 CRCW0805 CRCW1206 vishay
    Text: D… /C R CW/ R CA RCWP w w w. v i s h a y. c o m For technical questions, contact ff2aresistors@vishay.com Asia and Americas , ff1resistors@vishay.com (Europe) S e l ector G uide thick film chip resistors resistive products V I S H A Y I N T E R T E C HN O L O G Y , I N C .


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    Tol4-9337-2920 VMN-SG2020-0603 SMD zener 562 CRCW0603 CRCW1206 D10LR hearing aids CRCW0201 CRCW0805 CRCW1206 vishay PDF

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


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    BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14 PDF

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


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    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U PDF

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


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    2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE PDF

    RCA-2N5179

    Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
    Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as


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    2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor PDF

    Narda 904N

    Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
    Text: File No. 350 RF P o w e r T r a n s is to rs Solid State Division 2N5470 RCA-2N5470* is an epitaxial silicon n-p-n planar transistor employing the overlay emitter-electrode con­ struction. It is intended for solid-state microwave radiosonde, communications, and S-band telemetry


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    2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N PDF

    RCA-40967

    Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
    Text: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E


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    470-MHz RCA-40967 TA8562 TA8563, VOLTAGE115 40967 40968 ATC100 596 transistor 2575A rca 832 PDF

    2N1491

    Abstract: 2N1492 2N1493 2N1491-2N1493
    Text: File No. 10 RF P o w e r T r a n s is to r s 2N1491 Solid State Division 9N14.Q9 2N1493 RCA-2N1491, 2N1492, and 2N1493 are triple-diffused transistors of the silicon n-p-n type. These transistors are intended for a wide variety of appli­ cations in industrial and military electronic equipment. They are particu­


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    2N1491 2N1492 2N1493 RCA-2N1491, 2N1492, 2N1493 2N1491 2N1492 92CS-I22B9RI 2N1491-2N1493 PDF

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


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    2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666 PDF

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


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    000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor PDF

    philco transistors

    Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
    Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.


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    2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    3SK88

    Abstract: transistor 3SK88 transistor T2S dual-gate
    Text: NEC M O S FIELD E F F E C T T R A N S I S T O R ELECTRON DEVICE 3SK88 RF A M P . FOR UHF T V TUNER N-CHANNEL SILICON DUAL-GATE M O S FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S Un.t : mm • Suitable tor use as R F am plifier in U H F T V tuner.


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    3SK88 Vos-10 VGts-t10 vG15-o lo-10mA. f-900 3SK88 transistor 3SK88 transistor T2S dual-gate PDF

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


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    to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012 PDF

    transistor 3l2

    Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
    Text: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft


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    2N5994 transistor 3l2 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    MFE201

    Abstract: S3H58 MFE201 application notes MFE202 MFE203 dual-gate
    Text: 3 S 2 - 5VZ- N-CHANNEL DUAL-GATE SIUCON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS MFE201 thru MFE203 . . d e p le tio n m o d e dual g a te tra n s is to rs d e s ig n e d fo r VHF a m p lifie r and m ix e r a p p lic a tio n s • MFE201 — VHF A m p lifie r


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    MFE201 MFE202 MFE203 MFE201. MFE202 MFE201 S3H58 MFE201 application notes MFE203 dual-gate PDF

    RFL1N08

    Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
    Text: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


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    RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352 PDF

    1415 Allen bradley

    Abstract: ta8750 microstripline 92CS-21568 2N6391 RCA2005 HF-46 HF46 SMFBA1
    Text: File No. 627 RF P o w e r T r a n s is to r s Solid State Division RCA2005 2N6391 5-W, 2-GHz, Em itter-Ballasted Silicon N-P-N Overlay Transistors Fo r Use in Microwave Power A m plifiers, Fundamental-Frequency Oscillators, and Frequency M ultipliers Features:


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    RCA2005 2N6391 HF-46 HF-46 2N6391* 1415 Allen bradley ta8750 microstripline 92CS-21568 2N6391 HF46 SMFBA1 PDF

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram PDF

    CA3031

    Abstract: CA3005 or CA3006 inverted welding machine schematic diagram .1microfarad capacitor transistor bf 175 RCA Transistors CA3034V1 RCA transistor CA3005 CA3004
    Text: This Manual, like its preceding edition, has been prepared to provide an understanding of the basic princi­ ples involved in the design and application of linear integrated circuits. It may be used as a guide by circuit and systems designers in determining optimum design


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    2N6105

    Abstract: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 2N6104 RCA 431 transistor
    Text: File No. 504 RF Power Transistors Solid State Division 2N6104 2N6105 30-W 4 0 0 - MHz Broadband E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors 2N 6105 J E D E C T O -2 1 6 A A Features: • ■ ■ ■ ■ 5-dB gain min. at 400 MHz with 30 watts (min.) output


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    2N6104 2N6105 400-MHz 2N6105) 2N6104) 2N6104 2N6105 2N6105: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 RCA 431 transistor PDF