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    Vishay Intertechnologies RE60G1R00C02

    RH-5 1 1% RE60G1R00 C02 - Bulk (Alt: RE60G1R00C02)
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    Avnet Americas RE60G1R00C02 Bulk 10 Weeks 10
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    Mouser Electronics RE60G1R00C02 208
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    Newark RE60G1R00C02 Bulk 10
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    TTI RE60G1R00C02 Tray 10
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    Vishay Dale RE60G1R00

    RESISTOR, WIRE WOUND, 5 W, 1 %, 50 ppm, 1 ohm, CHASSIS MOUNT
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    Quest Components RE60G1R00 458
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    RE60G1R00 2
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    Ohmite Mfg Co RE60G1R00

    RESISTOR, WIRE WOUND, 5 W, 1 %, 50 ppm, 1 ohm, CHASSIS MOUNT
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    Quest Components RE60G1R00 1
    • 1 $19.5478
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    RE60G1R00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ATC 100C

    Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series

    MRF284

    Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH

    C10 PH

    Abstract: 56-590-65-3B 369A-10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 C10 PH 56-590-65-3B 369A-10

    K 3569 7.G equivalent

    Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284LSR1 MRF284R1 K 3569 7.G equivalent 369A-10 CDR33BX104AKWS 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    369A-10

    Abstract: C10 PH dale 2000 2x12 mallory capacitor 1500 mf
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D 369A-10 C10 PH dale 2000 2x12 mallory capacitor 1500 mf

    mrf284

    Abstract: C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284/D C10 PH

    RE60G1R00

    Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284R1 MRF284LSR1 RE60G1R00 RM73B2B682JT RM73B2B152JT SME50VB 56590653B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 MRF284/D

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    marking amplifier j02

    Abstract: CDR33BX104AKWS MRF284 MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284LR1 marking amplifier j02 CDR33BX104AKWS MRF284 MRF284LSR1

    MRF284

    Abstract: CDR33BX104AKWS MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 20ctive MRF284LR1 MRF284 CDR33BX104AKWS MRF284LSR1

    johanson

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284LSR1 MRF284LR1 johanson

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    MOSFET marking Z5

    Abstract: 56590653B z14 b marking Freescale MARKING W3
    Text: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LSR1 MOSFET marking Z5 56590653B z14 b marking Freescale MARKING W3

    sme50vb101m12x25l

    Abstract: C10 PH wirewound resistor j10 NI-360
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D sme50vb101m12x25l C10 PH wirewound resistor j10 NI-360

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    56590653B

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 56590653B

    capacitor variable

    Abstract: mj031 MJD32 MOTOROLA MRF284 SME50VB101 369A-10 variable capacitor CDR33BX104AKWS MRF284SR1 56-590-65-3B
    Text: MOTOROLA O rder this docum ent by M RF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF284 MRF284SR1 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    OCR Scan     		PDF MRF284/D MRF284/D capacitor variable mj031 MJD32 MOTOROLA MRF284 SME50VB101 369A-10 variable capacitor CDR33BX104AKWS MRF284SR1 56-590-65-3B