Untitled
Abstract: No abstract text available
Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)
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2SK2980
REJ03G1061-0400
ADE-208-571B)
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns
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FX30KMJ-06
REJ03G1446-0200
MEJ02G0276-0101)
PRSS0003AB-A
O-220FN)
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Untitled
Abstract: No abstract text available
Text: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter
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2SK2144
REJ03G1001-0200
ADE-208-1349)
PRSS0003AE-A
O-220Câ
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Untitled
Abstract: No abstract text available
Text: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns
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FS10ASJ-2
REJ03G1408-0200
MEJ02G0061-0101)
PRSS0004ZA-A
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Untitled
Abstract: No abstract text available
Text: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.
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TBB1017
REJ03G1469-0100
PTSP0006JA-A
TBB1017
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Untitled
Abstract: No abstract text available
Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A
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2SK3214
REJ03G1093-0400
PRSS0004AC-A
O-220AB)
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Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1012
R07DS0317EJ0300
REJ03G1245-0200)
PTSP0006JA-A
TBB1012
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Abstract: No abstract text available
Text: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching Low drive current Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)
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RJK1055DPB
R07DS1058EJ0200
REJ03G1887-0100)
PTZZ0005DA-A
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Abstract: No abstract text available
Text: Data Sheet HAT2205C R07DS1181EJ0500 Previous: REJ03G1237-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.
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HAT2205C
R07DS1181EJ0500
REJ03G1237-0400)
PWSF0006JA-A
Symb2886-9022/9044
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Abstract: No abstract text available
Text: Data Sheet HAT1108C R07DS1176EJ0600 Previous: REJ03G1234-0500 Rev.6.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting
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HAT1108C
R07DS1176EJ0600
REJ03G1234-0500)
PWSF0006JA-A
Sym2886-9022/9044
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RQA0009SXAQS
Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
Text: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting
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RQA0009SXAQS
REJ03G1566-0100
PLZZ0004CA-A
RQA0009SXAQS
RQA0009
RQA0009SXTL-E
RQA0009SX
c5 marking code
1747 C13
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RJK6014DPP
Abstract: RJK6014DPP-00-T2
Text: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate
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RJK6014DPP
REJ03G1531-0100
PRSS0003AB-A
O-220FN)
RJK6014DPP
RJK6014DPP-00-T2
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PUSF0002ZC-A
Abstract: RKR0505AKH
Text: RKR0505AKH Silicon Schottky Barrier Diode for Rectifying REJ03G1493-0100 Rev.1.00 Jan 09, 2007 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package TURP is suitable for high density surface mounting and high speed assembly.
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RKR0505AKH
REJ03G1493-0100
PUSF0002ZC-A
PUSF0002ZC-A
RKR0505AKH
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PRSS0003AA-A
Abstract: BCR5PM-12LG BCR5PM-12LG-A8 TRIAC dimmer control bcr5pm
Text: BCR5PM-12LG Triac Medium Power Use REJ03G1507-0200 Rev.2.00 Mar 06, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT RMS : 5 A
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BCR5PM-12LG
REJ03G1507-0200
E223904
E80271
PRSS0003AA-A
O-220F
PRSS0003AA-A
BCR5PM-12LG
BCR5PM-12LG-A8
TRIAC dimmer control bcr5pm
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RJK0354DSP
Abstract: RJK0354DSP-00-J0
Text: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)
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RJK0354DSP
REJ03G1661-0200
PRSP0008DD-D
RJK0354DSP
RJK0354DSP-00-J0
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H5N2501LD
Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Text: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
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H5N2501LD,
H5N2501LS,
H5N2501LM
REJ03G1250-0200
PRSS0004AE-A
PRSS0004AE-B
PRSS0004AE-C
H5N2501LS
H5N2501LD
H5N2501LD
H5N2501LM
H5N2501LS
H5N2501LSTL-E
PRSS0004AE-C
Package Code 22
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RJK0301DPB
Abstract: RJK0301DPB-00-J0 RJK0301DPB-00
Text: RJK0301DPB Silicon N Channel Power MOS FET Power Switching REJ03G1338-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 mΩ typ. (at VGS = 10 V)
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RJK0301DPB
REJ03G1338-0900
PTZZ0005DA-A
RJK0301DPB
RJK0301DPB-00-J0
RJK0301DPB-00
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RQK0203SGDQA
Abstract: RQK0203SGDQATL-E SC-59A a83v
Text: RQK0203SGDQA Silicon N Channel MOS FET Power Switching REJ03G1323-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS on = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0203SGDQA
REJ03G1323-0300
PLSP0003ZB-A
RQK0203SGDQA
RQK0203SGDQATL-E
SC-59A
a83v
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RQJ0204XGDQA
Abstract: RQJ0204XGDQATL-E SC-59A
Text: RQJ0204XGDQA Silicon P Channel MOS FET Power Switching REJ03G1320-0300 Rev.3.00 May 24, 2006 Features • Low on-resistance RDS on = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQJ0204XGDQA
REJ03G1320-0300
PLSP0003ZB-A
RQJ0204XGDQA
RQJ0204XGDQATL-E
SC-59A
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RQK0301FGDQS
Abstract: RQK0301FGDQSTL-E MARKING CODE RD 3.A
Text: RQK0301FGDQS Silicon N Channel MOS FET Power Switching REJ03G1269-0300 Rev.3.00 Jun 22, 2006 Features • Low on-resistance RDS on = 28 mΩ typ (VGS = 10 V, ID = 3 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A
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RQK0301FGDQS
REJ03G1269-0300
PLZZ0004CA-A
RQK0301FGDQS
RQK0301FGDQSTL-E
MARKING CODE RD 3.A
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RQK0605JGDQA
Abstract: RQK0605JGDQATL-E SC-59A
Text: RQK0605JGDQA Silicon N Channel MOS FET Power Switching REJ03G1278-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 82 mΩ typ (VGS = 10 V, ID = 1.5 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0605JGDQA
REJ03G1278-0400
PLSP0003ZB-A
RQK0605JGDQA
RQK0605JGDQATL-E
SC-59A
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RQK0204TGDQA
Abstract: RQK0204TGDQATL-E SC-59A
Text: RQK0204TGDQA Silicon N Channel MOS FET Power Switching REJ03G1324-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS on = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0204TGDQA
REJ03G1324-0300
PLSP0003ZB-A
RQK0204TGDQA
RQK0204TGDQATL-E
SC-59A
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RQJ0301HGDQS
Abstract: RQJ0301HGDQSTL-E
Text: RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features • Low on-resistance RDS on = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A
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RQJ0301HGDQS
REJ03G1265-0300
PLZZ0004CA-A
RQJ0301HGDQS
RQJ0301HGDQSTL-E
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rjk5020
Abstract: RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65
Text: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0100 Rev.1.00 Sep. 23, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate
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RJK5020DPK
REJ03G1263-0100
PRSS0004ZE-A
rjk5020
RJK5020DPK-E
PRSS0004ZE-A
RJK5020DPK
SC-65
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