RJK5020DPK Search Results

RJK5020DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK5020DPK-00#T0		Renesas Electronics Corporation	Nch Single Power Mosfet 500V 40A 118Mohm To-3P

RJK5020DPK Price and Stock

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Rochester Electronics LLC RJK5020DPK01-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK5020DPK01-E	Bulk			43	1 - 10 - 100 $7.11 1000 $7.11 10000 $7.11	Buy Now
Renesas Electronics Corporation RJK5020DPK-00-T0 MOSFET N-CH 500V 40A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK5020DPK-00-T0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation RJK5020DPK01-E Power Field-Effect Transistor, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJK5020DPK01-E		451		1	1 $6.84 10 $6.84 100 $6.43 1000 $5.81 10000 $5.81	Buy Now

RJK5020DPK Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK5020DPK		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
RJK5020DPK		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
RJK5020DPK-00#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 40A TO3P		Original	PDF
RJK5020DPK-00-T0		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
RJK5020DPK-E		Renesas Technology	Transistor Mosfet N-CH 500V 40A 3 pin TO-3P		Original	PDF

RJK5020DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
rjk5020 Abstract: RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65 Text: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0100 Rev.1.00 Sep. 23, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate	Original	RJK5020DPK REJ03G1263-0100 PRSS0004ZE-A rjk5020 RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65	PDF
rjk5020 Abstract: No abstract text available Text: Preliminary Datasheet RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0300 Rev.3.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P	Original	RJK5020DPK REJ03G1263-0300 PRSS0004ZE-A V9044 rjk5020	PDF
rjk5020 Abstract: rjk5020dpk PRSS0004ZE-A RJK5020DPK-00-T0 SC-65 Text: Preliminary Datasheet RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0300 Rev.3.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P	Original	RJK5020DPK REJ03G1263-0300 PRSS0004ZE-A rjk5020 rjk5020dpk PRSS0004ZE-A RJK5020DPK-00-T0 SC-65	PDF
RJK5020DPK-00-T0 Abstract: RJK5020DPK rjk5020 PRSS0004ZE-A SC-65 Text: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0200 Rev.2.00 Dec 19, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate	Original	RJK5020DPK REJ03G1263-0200 PRSS0004ZE-A RJK5020DPK-00-T0 RJK5020DPK rjk5020 PRSS0004ZE-A SC-65	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
rjk5020 Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174 Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment	Original	HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174	PDF
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK	PDF
R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114	PDF