ieee1149.1 cypress
Abstract: P-LBGA165-15x17-1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
r761b
Abstract: 761-B CTR100 PS2761B PN10651EJ01V0DS PS2761B-1
Text: Data Sheet PS2761B-1 R08DS0106EJ0400 Rev.4.00 Jan 29, 2013 4-PIN SOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C DESCRIPTION The PS2761B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic SOP Small Outline Package for high density applications.
|
Original
|
PS2761B-1
R08DS0106EJ0400
PS2761B-1
PS2761B-1-F3:
r761b
761-B
CTR100
PS2761B
PN10651EJ01V0DS
|
PDF
|
RENESAS MARKING CQ
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QAA4436RBG
R1QAA4418RBG
144-Mbit
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
165-pin
RENESAS MARKING CQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QLA4436RBG,
R1QLA4418RBG
144-Mbit
R10DS0144EJ0100
R1QLA4436RBG
304-word
36-bit
R1QLA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QHA4436RBG
R1QHA4418RBG
144-Mbit
R10DS0145EJ0100
304-word
36-bit
R1QHA4418RBG
608-word
18-bit
|
PDF
|
R1QDA4418RBG-19IB0
Abstract: RENESAS MARKING CQ RENESAS Marking is "cq" RENESAS MARKING AB
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QDA4436RBG
R1QDA4418RBG
144-Mbit
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
165-pin
R1QDA4418RBG-19IB0
RENESAS MARKING CQ
RENESAS Marking is "cq"
RENESAS MARKING AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QAA4436RBG
R1QAA4418RBG
144-Mbit
R10DS0137EJ0201
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
|
PDF
|
R1QDA4436RBG
Abstract: No abstract text available
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QDA4436RBG
R1QDA4418RBG
144-Mbit
R10DS0136EJ0201
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QBA4436RBG,R1QBA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency R10DS0143EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QBA4436RBG is a 4,194,304-word by 36-bit and the R1QBA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QBA4436RBG
R1QBA4418RBG
144-Mbit
R10DS0143EJ0100
304-word
36-bit
R1QBA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG / R1QAA7209ABG R1QDA7236ABG / R1QDA7218ABG / R1QDA7209ABG R1QGA7236ABG / R1QGA7218ABG / R1QGA7209ABG R1QKA7236ABG / R1QKA7218ABG / R1QKA7209ABG
|
Original
|
0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QAA7209ABG
R1QDA7236ABG
R1QDA7218ABG
R1QDA7209ABG
R1QGA7236ABG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency R10DS0139EJ0200 Rev.2.00 Jun 01, 2013 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QGA4436RBG
R1QGA4418RBG
144-Mbit
R10DS0139EJ0200
304-word
36-bit
R1QGA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QKA4436RBG
R1QKA4418RBG
144-Mbit
R10DS0138EJ0201
304-word
36-bit
R1QKA4418RBG
608-word
18-bit
|
PDF
|
2L TRANSISTOR
Abstract: marking sa R1Q2A3618 R1Q2A3618BBG-40R R1Q2A3636B R1Q2A3636BBG-40R R1Q2A3636BBG-50R R1Q2A3636BBG-60R renesas sram marking code
Text: R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 36-Mbit QDR II SRAM 2-word Burst REJ03C0341-0003 Preliminary Rev. 0.03 Apr. 11, 2008 Description The R1Q2A3636B is a 1,048,576-word by 36-bit, the R1Q2A3618B is a 2,097,152-word by 18-bit, and the R1Q2A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
36-Mbit
REJ03C0341-0003
R1Q2A3636B
576-word
36-bit,
R1Q2A3618B
152-word
18-bit,
R1Q2A3609B
2L TRANSISTOR
marking sa
R1Q2A3618
R1Q2A3618BBG-40R
R1Q2A3636BBG-40R
R1Q2A3636BBG-50R
R1Q2A3636BBG-60R
renesas sram marking code
|
PDF
|
2L TRANSISTOR
Abstract: marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636B R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R
Text: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
|
Original
|
R1Q4A3636B/R1Q4A3618B
36-Mbit
REJ03C0343-0003
R1Q4A3636B
576-word
36-bit,
R1Q4A3618B
152-word
18-bit
165-pin
2L TRANSISTOR
marking code 576
R1Q4A3618BBG-33R
R1Q4A3618BBG-40R
R1Q4A3636BBG-33R
R1Q4A3636BBG-40R
R1Q4A3636BBG-50R
R1Q4A3636BBG-60R
R1Q4A3618BBG-60R
|
PDF
|
|
|
R1Q2A7236
Abstract: No abstract text available
Text: R1Q2A7236 / R1Q2A7218 / R1Q2A7209 Series R1Q2A7236ABG Series R1Q2A7218ABG Series R1Q2A7209ABG Series 72-Mbit QDR II SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q2A7236
R1Q2A7218
R1Q2A7209
R1Q2A7236ABG
R1Q2A7218ABG
R1Q2A7209ABG
72-Mbit
152-word
36-bit,
|
PDF
|
fbga 15x17
Abstract: fbga 15x17 tray KA Finance activities R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A3636B R1Q5A3636BBG-33R R1Q5A3636BBG-40R R1Q5A3636BBG-50R
Text: R1Q5A3636B/R1Q5A3618B 36-Mbit DDRII SRAM 4-word Burst REJ03C0344-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q5A3636B is a 1,048,576-word by 36-bit, the R1Q5A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
|
Original
|
R1Q5A3636B/R1Q5A3618B
36-Mbit
REJ03C0344-0003
R1Q5A3636B
576-word
36-bit,
R1Q5A3618B
152-word
18-bit
165-pin
fbga 15x17
fbga 15x17 tray
KA Finance activities
R1Q5A3618BBG-33R
R1Q5A3618BBG-40R
R1Q5A3636BBG-33R
R1Q5A3636BBG-40R
R1Q5A3636BBG-50R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0004 Preliminary Rev. 0.04 Oct.22, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
R1Q3A3636B/R1Q3A3618B/R1Q3A3609B
36-Mbit
REJ03C0342-0004
R1Q3A3636B
576-word
36-bit,
R1Q3A3618B
152-word
18-bit,
R1Q3A3609B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QAA36*CB* / R1QDA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
|
Original
|
0000---QDRII+
R1QAA36*
R1QDA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QCA36*CB* / R1QFA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG
|
Original
|
0000---DDRII+
R1QCA36*
R1QFA36*
R1QCA3636CBG
R1QCA3618CBG
R1QCA3609CBG
R1QFA3636CBG
R1QFA3618CBG
R1QFA3609CBG
R1QJA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: - 00000.0000.0000.0000.0000-QDRII+_RL20 R1QGA36*CB* / R1QKA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
|
Original
|
0000--QDRII+
R1QGA36*
R1QKA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description
|
Original
|
R1QBA72
R1QEA72
R1QBA7236ABG
R1QBA7218ABG
R1QBA7209ABG
R1QEA7236ABG
R1QEA7218ABG
R1QEA7209ABG
R1QHA7236ABG
R1QHA7218ABG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
|
Original
|
R1Q4A4436RBG,
R1Q4A4418RBG
144-Mbit
R10DS0146EJ0101
R1Q4A4436RBG
304-word
36-bit
R1Q4A4418RBG
608-word
18-bit
|
PDF
|
NR131
Abstract: No abstract text available
Text: Preliminary Data Sheet PS2514-1,PS2514L-1 R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES DESCRIPTION The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
|
Original
|
PS2514-1
PS2514L-1
PS2514L-1
R08DS0012EJ0100
NR131
|
PDF
|
KH 151
Abstract: No abstract text available
Text: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0100 Rev.1.00 Oct 01, 2012 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QKA4436RBG
R1QKA4418RBG
144-Mbit
304-word
36-bit
R1QKA4418RBG
608-word
18-bit
165-pin
KH 151
|
PDF
|
