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    RETENTION Search Results

    RETENTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    70017-001LF Amphenol Communications Solutions Din Accessory, Backplane Connectors, Shroud 3x32 Back Side, High Retention Visit Amphenol Communications Solutions
    10042618-002 Amphenol Communications Solutions PCI Express® GEN 1 Card Edge, Storage and Server Connector, x16 Graphics Card Retention Mechanism. Visit Amphenol Communications Solutions
    10125878-202001ALF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Single row , Self Retention, 2 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    50428-X225XLF Amphenol Communications Solutions High Pin Count, Backplane Connectors, Shroud-Retentive, Vertical, 3 Row, 225 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    50431-X160XLF Amphenol Communications Solutions High Pin Count Backplane Connectors, Shroud-Retentive, Vertical, 4 Row, 160 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
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    C&K Aerospace SPLICE-TOOL-RETENTION-02

    SPACE SPLICE
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    DigiKey SPLICE-TOOL-RETENTION-02 Bulk 5 1
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    C&K Aerospace SPLICE-TOOL-RETENTION-01

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    Bel Power Solutions RETENTIONCLIP(2X)

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    ADLINK Technology Inc P4-LGA775 RETENTION MODULE

    BACKPLATE FOR LGA 775 3U CPU COOLER - Bulk (Alt: P4-LGA775 RETENTIO)
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    Bel Fuse RETENTIONCLIP(2X)

    REPLACES OLD CALLOUT HZZ01209 - Bulk (Alt: RETENTIONCLIP(2X))
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    RETENTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


    Original     		PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    Untitled

    Abstract: No abstract text available
    Text: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455C − MARCH 2005 − REVISED AUGUST 2005 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA


    Original     		PDF MSP430F42x0 SLAS455C 16-Bit 125-ns 12-Bit

    Untitled

    Abstract: No abstract text available
    Text: Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES • 100,000 Program/Erase Cycles ■ 5 MHz SPI Compatible ■ 100 Year Data Retention ■ 1.8 to 6.0 Volt Operation ■ Self-Timed Write Cycle ■ Hardware and Software Protection ■ 8-Pin DIP/SOIC and 20-Pin TSSOP


    Original     		PDF CAT25C256 256K-Bit 20-Pin 64-Byte CAT25C256 32Kx8 25C256 25C256: 2000/Reel

    CTJ-6-06-1306-BK-PX

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Voltage Rating: Current Rating: Contact Res.: Insulation Res.: Housing: Contacts: Mating/Unmating : Retention: Durability: Operating Temp.: D E Series CTJ Modular phone jack Recommended PCB Layout F Positions X


    Original     		PDF 1000Meg 500VAC CTJ-6-06-1306-BK-PX CTJ-6-06-1306-BK-PX

    KTH-1000

    Abstract: KTH-5017 KTH-2325 KTH-2025 KTH-5003 VDM230 KTH-2276 KTH-2258 KTH-5001 VPM2000TS
    Text: 2065 Series Product Benefits BNC Connectors Full crimp design Designed for analog & digital cables Field Installable Meets or exceeds HDTV standards Mechanical Durability: Center Contact Retention: Coupling Mechanism: Force to Engage/Disengage: Interface Dimension:


    Original     		PDF MIL-C-39012 5400Phone 5500Fax KTH-1000 KTH-5017 KTH-2325 KTH-2025 KTH-5003 VDM230 KTH-2276 KTH-2258 KTH-5001 VPM2000TS

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    rg5H20

    Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
    Text: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25H20 rg5H20 fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G

    NTE65101

    Abstract: No abstract text available
    Text: NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory SRAM Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention


    Original     		PDF NTE65101 526-NTE65101 NTE65101

    c8051f902

    Abstract: C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90
    Text: C8051F91x-C8051F90x Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU Ultra-Low Power - 160 uA/MHz in active mode 24.5 MHz clock - 2 us wake-up time (two-cell mode) - 10 nA sleep mode with memory retention; - 50 nA sleep mode with brownout detector


    Original     		PDF C8051F91x-C8051F90x 12/10-Bit F912/02 F911/01) c8051f902 C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90

    MSP430

    Abstract: cc cg1 100 278
    Text: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA


    Original     		PDF MSP430FG42x0 SLAS556A 16-Bit 125-ns 12-Bit MSP430 cc cg1 100 278

    MR25H10

    Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
    Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range


    Original     		PDF MR25H10 MR25H10 576-bit M25H10 MR25H10C M25H1 MR25H10CDC MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket

    SPA02

    Abstract: SPA04B SPA06 SPA08B SPA10
    Text: SPA Series Single In-line Package Switches Features/Benefits • Thin Single In-line Packaging saves • • • PCB space Retention feature holds part to PCB prior to soldering Available in vertical or right angle models High pressure contact system does not require tape sealing


    Original     		PDF SPA02AB SPA04AB SPA06AB SPA08AB SPA10AB SPA02 SPA04B SPA06 SPA08B SPA10

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y

    100-PIN

    Abstract: ADC12 MSP430 MSP430F4618IPZ
    Text: MSP430x461x1, MSP430x461x MIXED SIGNAL MICROCONTROLLER SLAS675 − OCTOBER 2009 D Low Supply Voltage Range: 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D − Active Mode: 400 µA at 1 MHz, 2.2 V − Standby Mode: 1.3 µA − Off Mode RAM Retention : 0.22 µA


    Original     		PDF MSP430x461x1, MSP430x461x SLAS675 16-Bit 125-ns 12-Bit MSP430x461x 100-PIN ADC12 MSP430 MSP430F4618IPZ

    XM28C010P

    Abstract: No abstract text available
    Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times


    Original     		PDF XM28C010P --150ns, 120ns, Size--64 XM28C010P

    ICS5311

    Abstract: ICODE SLI-S
    Text: NXP ICODE SLI-SY HF RFID smart label IC When long-term data integrity and tailored security counts National archives, university libraries and museums need an identification solution that will last for decades. Offering a guaranteed 40 years data retention, NXPs’ ICODE SLI-SY answers


    Original     		PDF ICS5311 FCS5311 ICS5311 ICODE SLI-S

    ru 94v0

    Abstract: ru 94v-0
    Text: Catalog 130/767 Issued 11-99 Top Load Battery Connector Features: • Accepts all CR2032 lithium ion batteries ■ Self-ejecting design allow s battery to be removed with­ out tools IfHp ■ Superior retention to pc board or to battery ■ Cost effective


    OCR Scan     		PDF CR2032 ru 94v0 ru 94v-0

    UM614256

    Abstract: HC 3102
    Text: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package


    OCR Scan     		PDF UM614256 150mA 28-pin 576-bit UM614256S-15 UM614256S-20 28LSOJ HC 3102

    Untitled

    Abstract: No abstract text available
    Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles


    OCR Scan     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx

    Untitled

    Abstract: No abstract text available
    Text: Electronics Standard Edge II Card Edge Connectors Solder Type Board-to-Board Connectors .100 [2.54] Centerline Vertical Solder Posts, Retention Feature, Without Mounting Ears M a te ria l and F in is h : .064 [1.63] Sq. X .130 [3.301 Dp. — Intercontact Key Slot


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns