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    SPA06 Search Results

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    SPA06 Price and Stock

    Infineon Technologies AG SPA06N60C3XKSA1

    MOSFET N-CH 650V 6.2A TO220-FP
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    DigiKey SPA06N60C3XKSA1 Tube
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    Newark SPA06N60C3XKSA1 Bulk 1
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    Chip1Stop SPA06N60C3XKSA1 7
    • 1 $2.92
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    • 100 $2.92
    • 1000 $2.92
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    Infineon Technologies AG SPA06N60C3

    Trans MOSFET N-CH 650V 6.2A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA06N60C3)
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    Avnet Americas SPA06N60C3 Tube 4 Weeks 1
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    Quest Components SPA06N60C3 100
    • 1 $1.1967
    • 10 $1.1967
    • 100 $0.5585
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    Rochester Electronics SPA06N60C3 400 1
    • 1 $0.6256
    • 10 $0.6256
    • 100 $0.5881
    • 1000 $0.5318
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    Infineon Technologies AG SPA06N60C3IN

    - Bulk (Alt: SPA06N60C3IN)
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    Avnet Americas SPA06N60C3IN Bulk 4 Weeks 1
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    Rochester Electronics SPA06N60C3IN 389 1
    • 1 $0.6256
    • 10 $0.6256
    • 100 $0.5881
    • 1000 $0.5318
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    Infineon Technologies AG SPA06N80C3XK

    Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA06N80C3XKSA1)
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    Avnet Americas SPA06N80C3XK Tube 15 Weeks 500
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    Chip1Stop SPA06N80C3XK 12
    • 1 $5.57
    • 10 $1.76
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.76
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    Infineon Technologies AG SPA06N80C3

    MOSFETs N-Ch 800V 6A TO220FP-3 CoolMOS C3
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    Mouser Electronics SPA06N80C3 3,338
    • 1 $2.12
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    • 100 $1.4
    • 1000 $1.01
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    TME SPA06N80C3 35 1
    • 1 $1.99
    • 10 $1.58
    • 100 $1.43
    • 1000 $1.33
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    Win Source Electronics SPA06N80C3 9,121
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    • 100 $1.618
    • 1000 $1.357
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    Find more SPA06 price and stock on Findchips.com

    SPA06 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA06 C&K Components DIP / Rotary DIP Original PDF
    SPA06AB C&K Components DIP Switches, Switches, SWITCH SIP SPST 6POS R/A UN 20V Original PDF
    SPA06B C&K Components DIP / Rotary DIP Original PDF
    SPA06N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 750.0 mOhm; ID(max) @ TC=25°C: 6.2 A; IDpuls (max): 18.6 A; Original PDF
    SPA06N60C3 Infineon Technologies for lowest Conduction Losses & fastest Switching Original PDF
    SPA06N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 6.2A TO-220 Original PDF
    SPA06N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 900.0 mOhm; ID(max) @ TC=25°C: 6.0 A; IDpuls (max): 18.0 A; Original PDF
    SPA06N80C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA06N80C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 6A TO220FP Original PDF

    SPA06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor df 331

    Abstract: d39 marking
    Text: SPA06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 SP000216301 06N60C3 transistor df 331 d39 marking

    06N80C3

    Abstract: 06N80
    Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80

    diode 71A

    Abstract: SPA06N80C3
    Text: SPA06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated


    Original     		PDF SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3

    06n80c3

    Abstract: SPA06N80C3
    Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3

    06n80c3

    Abstract: JESD22 PG-TO220-3 SPA06N80C3
    Text: SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3

    06n80c3

    Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3
    Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3

    06N60C3

    Abstract: PG-TO220-3-31 Q67040-S4631 SPA06N60C3
    Text: SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 PG-TO220-3-31 Q67040-S4631 06N60C3 06N60C3 PG-TO220-3-31 Q67040-S4631 SPA06N60C3

    06n80c3

    Abstract: SPP06N80C3 06n80
    Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80

    DF 331 TRANSISTOR

    Abstract: 06N60C3 Q67040-S4631 SPA06N60C3
    Text: SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 Q67040-S4631 06N60C3 DF 331 TRANSISTOR 06N60C3 Q67040-S4631 SPA06N60C3

    Adapter

    Abstract: No abstract text available
    Text: SPARKLE POWER INT’L LTD. SPI SPA065AS19C 19V@3.42 Adapter Power Supply San Jose Office 1000 ROCK AVE. SAN JOSE, CA 95131 TEL: (408) 519-8888 FAX: (408) 519-9999 ATTN: SALES DEPT. Colorado Office TEL: (303) 776-3281 FAX: (303) 776-7645 L.A. Office TEL: (626) 839-1124


    Original     		PDF SPA065AS19C Adapter

    Untitled

    Abstract: No abstract text available
    Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3

    06N80

    Abstract: No abstract text available
    Text: SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80

    diode 400A

    Abstract: 06N60 06N60C3 PG-TO220-3-31 SPA06N60C3
    Text: SPA06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 SP000216301 06N60C3 diode 400A 06N60 06N60C3 PG-TO220-3-31 SPA06N60C3

    06N80C3

    Abstract: No abstract text available
    Text: SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA06N80C3 PG-TO220-3 06N80C3 06N80C3

    D1650

    Abstract: No abstract text available
    Text: SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3 D1650

    06n80c3

    Abstract: Q67040-S4351 SPA06N80C3 SPP06N80C3 06n80 CTJ720
    Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 Q67040-S4351 SPA06N80C3 SPP06N80C3 06n80 CTJ720

    Untitled

    Abstract: No abstract text available
    Text: SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 PG-TO220-3-31 Q67040-S4631 06N60C3

    06N80C3

    Abstract: 06n80 P-TO220-3-31 Q67040-S4435 06n8 Q67040-S4351 SPA06N80C3 SPP06N80C3 q67040s4351 spa06n
    Text: SPP06N80C3 SPA06N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 06n80 P-TO220-3-31 Q67040-S4435 06n8 Q67040-S4351 SPA06N80C3 SPP06N80C3 q67040s4351 spa06n

    SPA02

    Abstract: SPA04B SPA06 SPA08B SPA10
    Text: SPA Series Single In-line Package Switches Features/Benefits • Thin Single In-line Packaging saves • • • PCB space Retention feature holds part to PCB prior to soldering Available in vertical or right angle models High pressure contact system does not require tape sealing


    Original     		PDF SPA02AB SPA04AB SPA06AB SPA08AB SPA10AB SPA02 SPA04B SPA06 SPA08B SPA10

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    BPA01

    Abstract: SDA02H0SBD rotary BCD coded switch 16 positions
    Text: DIP Product Selection Guide DIP I DIP Series TDP TDA Switch Type Half-pitch Half-pitch No. of Positions .050” Side actuated 2,4,8 .050” SDA SD Low Profile Low Profile BD BPA SPA RTE CD CRD Single In-line Package Rotary & Coded 8 mm Coded Rotary 10 mm Coded


    Original     		PDF

    LC filter dimmer Triac

    Abstract: Triac soft start 240v zero crossing pwm dimmer triac phase control UCC28810 lighting dimmer sample schematic Single-Stage Flyback UCC28810D schematic circuit diagram of flyback PFC converter for LED UCC28811
    Text: UCC28810 UCC28811 www.ti.com. SLUS865 – OCTOBER 2008 LED LIGHTING POWER CONTROLLER


    Original     		PDF UCC28810 UCC28811 SLUS865 LC filter dimmer Triac Triac soft start 240v zero crossing pwm dimmer triac phase control UCC28810 lighting dimmer sample schematic Single-Stage Flyback UCC28810D schematic circuit diagram of flyback PFC converter for LED UCC28811

    PR788

    Abstract: UCC28810 filter dimmer Triac emc UCC28810D off-line flyback regulator 100w Self-Oscillating Flyback Converters Triac soft start 240v UCC28810DR UCC28811D UCC28811DR
    Text: UCC28810 UCC28811 www.ti.com. SLUS865 – OCTOBER 2008 LED LIGHTING POWER CONTROLLER


    Original     		PDF UCC28810 UCC28811 SLUS865 PR788 UCC28810 filter dimmer Triac emc UCC28810D off-line flyback regulator 100w Self-Oscillating Flyback Converters Triac soft start 240v UCC28810DR UCC28811D UCC28811DR

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF