Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10A
MPSH10A
MPSH10A-x-T92-B
MPSH10AL-x-T92-B
MPSH10AG-x-T92-B
MPSH10A-x-T92-K
MPSH10AL-x-T92-K
MPSH10AG-x-T92-K
QW-R201-065
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10
MPSH10
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
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mpsh10
Abstract: MPS-H10 MPSH10G transistor l2
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number Normal
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MPSH10
MPSH10
MPSH10-x-T92-B
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10-x-T92-K
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
MPS-H10
MPSH10G
transistor l2
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Untitled
Abstract: No abstract text available
Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C
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MPSH10
MPSH10A
1000pF
8-10pF
100pF
0-18pF
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CBVK741B019
Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
CBVK741B019
F63TNR
MMBTH20
PN2222N
Q100
transistor mark code t1
Ohmite RF
Z-235
MPS-H20
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Untitled
Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
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MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
MARKING W3 SOT23 TRANSISTOR
rf transistor mark code H1
transistor marking code ne SOT-23
marking code w2 sot23
pnp rf transistor
sot23 Transistor marking p2
sot-23 Marking 3D
marking 3d sot-23
Marking code mps
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MPSH81
Abstract: MMBTH81 transistor mark 3d
Text: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol
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MPSH81
MMBTH81
OT-23
MPSH81
MMBTH81
transistor mark 3d
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SILICON TRANSISTOR CORP
Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor
Text: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS
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CP302
MPSH10
MPSH11
CMPTH10
CMPTH11
SILICON TRANSISTOR CORP
MPSH10 datasheet
CMPTH10
CP302
MPSH10
MPSH11
chip die npn transistor
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transistor r 53
Abstract: MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die
Text: PROCESS CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization
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CP302
MPSH10
MPSH11
CMPTH10
CMPTH11
22-March
transistor r 53
MPSH10 datasheet
MPSH10
mpsh10 data sheet
CMPTH10
CP302
MPSH11
chip die npn transistor
chip die transistor
MPSH10 die
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MPS3866
Abstract: MRF3866R2
Text: MOTOROLA Order this document by MPS3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MPS3866 MRF3866R2 • Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY
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MPS3866/D
MPS3866
MRF3866R2
MRF3866R2:
MPS3866
MPS3866/D*
MRF3866R2
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distress beacon
Abstract: dn-101 transistor ztx zetex transistors TO92 285T distress ZTX688B DIAC application MPSH10 S parameters
Text: Design Note 9 Issue 2 June 1995 Automotive Security Systems and RF Transistor Products Design Note 10 Issue 2 June 1995 3V Distress Beacon + 12V Antenna 680 1M + 3V Encoder I.C. 15T The majority of modem automotive alarms employ coded RF systems that key a VHF carrier wave with a unique or
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1M/120k)
DN10-1
distress beacon
dn-101
transistor ztx
zetex transistors TO92
285T
distress
ZTX688B
DIAC application
MPSH10 S parameters
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318MHZ
Abstract: MPSH10 MPSH10P CTO-92
Text: NPN SILICON PLANAR RF TRANSISTOR MPSH10 ISSUE 3 NOVEMBER 94 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz B E C TO92 REFER TO MPSH10P FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage
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MPSH10
650MHz
500MHz
MPSH10P
100MHz
318MHZ
MPSH10
CTO-92
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mps901
Abstract: MRF901
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
MPS901
MRF901
MRF9011LT1
MRF9011LT1)
MRF901
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MPS6547
Abstract: 933 TRANSISTOR
Text: MPS6547 silicon NPN SILICON RF A M PLIFIER TRANSISTOR NPN SILICON ANNULAR RF A M PLIFIER TRANSISTOR . . . designed for use in RF am plifier applications. • Collector-Em itter Breakdown Voltage — • High-Current-Gain—Bandwidth Product — f f = 100 0 M H z (T yp ) @ I q ~ 2 .0 mAdc
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MPS6547
MPS6547
933 TRANSISTOR
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MPS8001
Abstract: MPS-U31 MPSU31 MPS8000 MPS-8000
Text: MPS8001 SILICON NPN SILICON RF ANNULAR TRANSISTOR RF OSCILLATOR TRANSISTOR NPN SILICON . . . designed for use in Citizen-Band comm unications equipment operating to 30 MHz, with low feedback capacity for stable opera tion. This part is designed to be used w ith the M P S 8 0 0 0 driver and
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MPS8001
MPS8000
MPS-U31
MPS8001
MPSU31
MPS-8000
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PDF
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MPS-U31
Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
Text: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.
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MPS-U31
MPS8000
MPS8001
AN-S96-
Dow-340
0ow-340
MPS-U31
MPSU31
MOTOROLA an-596
DOW 340
an-596
5659065-3B
MPS-U31-1
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mm4018
Abstract: No abstract text available
Text: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli cations in military and industrial equipment. Suitable for use as
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MM4018/D
mm4018
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS6543 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 100 |^A to 10 m A range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum RâtinÇjS
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PS6543
MPS6543
MPSH11
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PDF
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MPS 4355 transistor
Abstract: MM8009 mps 0737
Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica tions in m ilitary and industrial equipment. Suitable for use as output,
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MM8009/D
MM8009
MPS 4355 transistor
MM8009
mps 0737
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PDF
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LTED
Abstract: MPSH81 MARK CB SOT23
Text: S E M IC O N D U C T O R tm MPSH81 MMBTH81 SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 m A range. Sourced from Process 75. Absolute Maximum RâtinÇjS
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MPSH81
MMBTH81
MPSH81
OT-23
MMBTH81
LTED
MARK CB SOT23
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PDF
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transistor 6D
Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Text: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA
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MPSH81
MMBTH81
b5D1130
D040a0fl
bSD1130
transistor 6D
D040
MMBTH81
MPSH81
transistor BUV 92
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PDF
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MPSH81
Abstract: No abstract text available
Text: MOTOROLA Order this document by MPSH81/D SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor MPSH81 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit v CEO -2 0 Vdc Collector-Base Voltage v CBO -2 0 Vdc
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MPSH81/D
MPSH81
MPSH81
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PDF
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transistor rc4
Abstract: MMBT5179 MPS5179
Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common
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MPS5179
MMBT5179
OT-23
tS0113D
transistor rc4
MMBT5179
MPS5179
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