MS-012AA
Abstract: RF1K49224 RF1K4922496 TB334
Text: RF1K49224 Data Sheet August 1999 File Number 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET Features The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49224
RF1K49224
MS-012AA
RF1K4922496
TB334
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Untitled
Abstract: No abstract text available
Text: RF1K49224 in te ik il Data Sheet A u g u s t 1999 Fite N um ber 4330.1 Features 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Com plem entary LittleFET Power M OSFET • 3.5A, 3 0 V N-Channel 2.5A, 3 0V (P-Channel) The R F1 K 4 9 2 24 complementary power M O S F E T is
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OCR Scan
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RF1K49224
TA49224.
AN7254
AN7260.
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is
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OCR Scan
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RF1K49224
RF1K49224
1-800-4-HARRIS
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MS-012AA
Abstract: RF1K49224 RF1K4922496 TB334 AN9321
Text: RF1K49224 Data Sheet January 2002 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET Features The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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Original
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RF1K49224
RF1K49224
MS-012AA
RF1K4922496
TB334
AN9321
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PDF
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MS-012AA
Abstract: RF1K49224 RF1K4922496 TB334
Text: RF1K49224 Data Sheet August 1999 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET File Number 4330.1 Features • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) Title F1K The RF1K49224 complementary power MOSFET is 224) manufactured using an advanced MegaFET process. This
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Original
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RF1K49224
RF1K49224
MS-012AA
RF1K4922496
TB334
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PDF
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MS-012AA
Abstract: RF1K49224 RF1K4922496
Text: RF1K49224 S E M I C O N D U C T O R 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 complementary power MOSFET is
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Original
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RF1K49224
RF1K49224
1-800-4-HARRIS
MS-012AA
RF1K4922496
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