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    RF1S50N06SM Price and Stock

    Rochester Electronics LLC RF1S50N06SM9A

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S50N06SM9A Bulk 317
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    Rochester Electronics LLC RF1S50N06SM9AS2551

    MOSFET 60V 50A
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    DigiKey RF1S50N06SM9AS2551 Bulk 293
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    Fairchild Semiconductor Corporation RF1S50N06SM9A

    50A, 60V, N-Channel Power MOSFET, TO-263AB '
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    Rochester Electronics RF1S50N06SM9A 9,898 1
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    Harris Semiconductor RF1S50N06SM9AS2551

    RF1S50 - 50A, 60V, 0.022 Ohm, Esd Rated, Logic Level N-Channel Power Mosfet '
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    Rochester Electronics RF1S50N06SM9AS2551 653 1
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    RF1S50N06SM Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S50N06SM Fairchild Semiconductor 50 A, 60 V, 0.022 ohm, N-Channel Power MOSFET Original PDF
    RF1S50N06SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S50N06SM Intersil 50A, 60V, 0.022 ?, N-Channel Power MOSFETs Original PDF
    RF1S50N06SM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S50N06SM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S50N06SM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RFP50N06

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFG50N06, RFP50N06, RF1S50N06SM 175oC RFP50N06 PDF

    F1S50N06

    Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 175oC 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0 PDF

    fairchild 9322

    Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG50N06, RFP50N06, RF1S50N06SM TA49018. fairchild 9322 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322 PDF

    F1S50N06

    Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFG50N06, RFP50N06, RF1S50N06SM 175oC F1S50N06 rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06 PDF

    rfp50n06

    Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFG50N06, RFP50N06, RF1S50N06SM 175oC rfp50n06 F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260 PDF

    RFP50N06

    Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model


    Original     		RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM O-247 175oC RF1S50N06SM RFP50N06 F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM9A RFG50N06 50A60V PDF

    F1S50N06

    Abstract: 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 123E-3 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    TO220-SMD

    Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
    Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V


    Original     		BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10 PDF

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 PDF

    TA49018

    Abstract: RFP50N06 50A60V f1s50n06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG50N06, RFP50N06, RF1S50N06SM TA49018. RF1S50N06SM AN7254 AN7260. TA49018 RFP50N06 50A60V f1s50n06 PDF

    F1S50N06

    Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
    Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model


    OCR Scan     		1S50N06, RFG50N06, RFP50N06, RF1S50N06SM O-247 022S1 RF1S50N06, RF1S50N06SM F1S50N06 RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N PDF

    RFPS0N06

    Abstract: TA49018 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG50N06, RFP50N06, RF1S50N06SM TA49018. AN7254 AN7260. RFPS0N06 TA49018 RFP50N06 PDF

    TA49018

    Abstract: RF1S50N06 F1S50N06 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 0-022i2 07e-3 51e-7 05e-9 33e-8) TA49018 RF1S50N06 F1S50N06 123E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 07e-3 51e-7 05e-9 33e-8) 98e-1 35E-4 PDF

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L PDF