RFP50N06
Abstract: No abstract text available
Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFG50N06,
RFP50N06,
RF1S50N06SM
175oC
RFP50N06
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F1S50N06
Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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Original
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
175oC
98e-1
35E-4
83e-6)
42e-9
1e-30
F1S50N06
RFP50N06
RF1S50N06SM9A
RF1S50N06
RF1S50N06SM
RFG50N06
TB334
TA49018
50A60V
rfp50n0
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PDF
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fairchild 9322
Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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Original
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
fairchild 9322
4V251
f1s50n06
fairchild APPLICATION NOTE AN 9322
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F1S50N06
Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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Original
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RFG50N06,
RFP50N06,
RF1S50N06SM
175oC
F1S50N06
rfp50n06 equivalent
AN7254
AN7260
RF1S50N06SM
RF1S50N06SM9A
RFG50N06
RFP50N06
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PDF
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fairchild APPLICATION NOTE AN 9321
Abstract: No abstract text available
Text: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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Original
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RFP50N06
175oC
RFP50N06
fairchild APPLICATION NOTE AN 9321
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PDF
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rfp50n06
Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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Original
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RFG50N06,
RFP50N06,
RF1S50N06SM
175oC
rfp50n06
F1S50N06
fairchild 9322
fairchild APPLICATION NOTE AN 9321
fairchild APPLICATION NOTE AN 9322
rfp50n06 equivalent
TA49018
RF1S50N06SM9A
AN7254
AN7260
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PDF
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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PDF
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RFP50N06
Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model
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Original
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
O-247
175oC
RF1S50N06SM
RFP50N06
F1S50N06
AN7254
AN7260
RF1S50N06
RF1S50N06SM9A
RFG50N06
50A60V
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F1S50N06
Abstract: 123E-3
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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Original
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
TA49018.
98e-1
35E-4
83e-6)
42e-9
1e-30
F1S50N06
123E-3
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PDF
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TA49018
Abstract: RFP50N06 50A60V f1s50n06
Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
RF1S50N06SM
AN7254
AN7260.
TA49018
RFP50N06
50A60V
f1s50n06
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PDF
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AN7254
Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited
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OCR Scan
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RFP50N05
RFG50N05
0-022O
11e-12
91e-3TRS1
26e-3
07e-6
12e-9
AN7254
RF650N06
RFP50N06
AN-7254
mosfat 24v
mosfat
RFP70N06
34069
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PDF
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F1S50N06
Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model
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OCR Scan
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1S50N06,
RFG50N06,
RFP50N06,
RF1S50N06SM
O-247
022S1
RF1S50N06,
RF1S50N06SM
F1S50N06
RFP50N06
N-channel MOSFET to-247 50a
50A60V
tc2516
TA49018
1S50N
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RFPS0N06
Abstract: TA49018 RFP50N06
Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
AN7254
AN7260.
RFPS0N06
TA49018
RFP50N06
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PDF
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TA49018
Abstract: RF1S50N06 F1S50N06 123E-3
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
TA49018.
0-022i2
07e-3
51e-7
05e-9
33e-8)
TA49018
RF1S50N06
F1S50N06
123E-3
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
07e-3
51e-7
05e-9
33e-8)
98e-1
35E-4
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PDF
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