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    RFP45N06 Search Results

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    RFP45N06 Price and Stock

    onsemi RFP45N06

    MOSFET N-CH 60V 45A TO220-3
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    DigiKey RFP45N06 Tube 400
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    Rochester Electronics LLC RFP45N06LE

    N-CHANNEL POWER MOSFET
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    DigiKey RFP45N06LE Bulk 430
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    Intersil Corporation RFP45N06

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    Bristol Electronics RFP45N06 135
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    Quest Components RFP45N06 104
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    Fairchild Semiconductor Corporation RFP45N06

    45 A, 60 V, 0.028 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB
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    Quest Components RFP45N06 109
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    ComSIT USA RFP45N06 1,432
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    Harris Semiconductor RFP45N06

    45 A, 60 V, 0.028 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB
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    Quest Components RFP45N06 103
    • 1 $1.44
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    Find more RFP45N06 price and stock on Findchips.com

    RFP45N06 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP45N06 Fairchild Semiconductor 45A, 60V, 0.028 ?, N-Channel Power MOSFETs Original PDF
    RFP45N06 Harris Semiconductor 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP45N06 Intersil 45A, 60V, 0.028 ?, N-Channel Power MOSFETs Original PDF
    RFP45N06 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 60V, 45A, Pkg Style TO-220AB Scan PDF
    RFP45N06LE Harris Semiconductor 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP45N06LE Intersil 45A, 60V, 0.028 ?, Logic Level N-Channel Power MOSFETs Original PDF

    RFP45N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tt 4458

    Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET PDF

    RFP45N06

    Abstract: AN7254 AN7260 RF1S45N06 RF1S45N06SM RF1S45N06SM9A RFG45N06 rfg4
    Text: RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM S E M I C O N D U C T O R 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 45A, 60V SOURCE DRAIN GATE • rDS ON = 0.028Ω • Temperature Compensating PSPICE Model


    Original     		RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM O-247 175oC RFP45N06 AN7254 AN7260 RF1S45N06 RF1S45N06SM RF1S45N06SM9A RFG45N06 rfg4 PDF

    AN9321

    Abstract: AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 45N06LE
    Text: RFP45N06LE, RF1S45N06LESM Data Sheet Title FP4 06L 1S4 06L M bt A, V, 28 m, gic vel October 1999 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs Features These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process


    Original     		RFP45N06LE, RF1S45N06LESM 175oC TA49177. TB334 RFP45N06LE O-220AB FP45N06L O-263AB AN9321 AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 45N06LE PDF

    tt 4458

    Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		RFG45N06, RFP45N06, RF1S45N06SM PDF

    mosfet motor dc 48v

    Abstract: AN9321 AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334
    Text: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		RFP45N06LE, RF1S45N06LESM 175oC mosfet motor dc 48v AN9321 AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 PDF

    RF1S45N06LE

    Abstract: RF1S45N06LESM RF1S45N06LESM9A RFG45N06LE RFP45N06LE F45N06LE 45N06LE
    Text: S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    Original     		RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 175oC 1-800-4-HARRIS RF1S45N06LE RF1S45N06LESM9A RFG45N06LE RFP45N06LE F45N06LE 45N06LE PDF

    45n06

    Abstract: AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE
    Text: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		RFP45N06LE, RF1S45N06LESM 45n06 AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE PDF

    AN9321

    Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFG45N06, RFP45N06, RF1S45N06SM TA49028. AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06 PDF

    Equivalent 50N06

    Abstract: MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 HIP6003 RFP70N03
    Text: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power


    Original     		HIP6003 AN9664 HIP6003EVAL1 Equivalent 50N06 MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 RFP70N03 PDF

    T68-52A

    Abstract: AN9722 PO564 MBR140P JOLO SPCJ-123-01 Schottky Diode 75V 7A T38-52 capacitor ceramic 33pF mosfet T60 pentium 4 motherboard schematic diagram
    Text: Switchmode DC-DC Converter Family Using HIP6006 and HIP6007 PWM Controller ICs Application Note August 1997 AN9761 Authors: Greg J. Miller, Bogdan M. Duduman Introduction Today’s high-performance microprocessors present many challenges to their power source. High power consumption,


    Original     		HIP6006 HIP6007 AN9761 HIP6007. T68-52A AN9722 PO564 MBR140P JOLO SPCJ-123-01 Schottky Diode 75V 7A T38-52 capacitor ceramic 33pF mosfet T60 pentium 4 motherboard schematic diagram PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    SPCJ-123-01

    Abstract: CTX09-13337-X1 Diode IT 9722 AN9722 HIP6002 HIP6003 HIP6006 HIP6006EVAL1 HIP6007 HIP6007EVAL1
    Text: DC-DC Converters for Microprocessors with Fixed Core Voltage Requirements Application Note April 1997 AN9722 Introduction Intersil HIP6006 and HIP6007 Today’s high-performance microprocessors present many challenges to their power source. High power consumption,


    Original     		AN9722 HIP6006 HIP6007 HIP6007 HIP6007. SPCJ-123-01 CTX09-13337-X1 Diode IT 9722 AN9722 HIP6002 HIP6003 HIP6006EVAL1 HIP6007EVAL1 PDF

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110 PDF

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    T0-262AA

    Abstract: No abstract text available
    Text: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    OCR Scan     		RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS T0-262AA PDF

    RFP45N06

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		RFG45N06, RFP45N06, RF1S45N06SM TA49028. 45CTION RFP4SN06, 75BVDss RFP45N06 PDF

    655E-6

    Abstract: fp45n ppm pspice 136E3 518E-7
    Text: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model


    OCR Scan     		RFG45N06 RFP45N06 O-220AB O-247 RFG45N06, FP45N06 15E-5) 25E-9 1E-30 12E-3 655E-6 fp45n ppm pspice 136E3 518E-7 PDF

    F1S45N06

    Abstract: MOSFET S1A M n10 ece
    Text: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model


    OCR Scan     		RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM O-247 2E-13 86E-3 26E-3 90E-6 07E-9 F1S45N06 MOSFET S1A M n10 ece PDF

    Untitled

    Abstract: No abstract text available
    Text: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model


    OCR Scan     		RFG45N06LE, RFP45N06LE, RF1S45N06LESM TA49177. 028i2 TB334 94e-4 94e-7) 70e-3 17e-5) PDF

    Untitled

    Abstract: No abstract text available
    Text: interrii RFP45N06LE, RF1S45N06LESM D ata S h e e t 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    OCR Scan     		RFP45N06LE, RF1S45N06LESM TA49177. RF1S4SN06LESM AN7254 AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 45A,60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 26E-3 90E-6 07E-9 72E-8) 93E-1 13E-4TRS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: H A F R F R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM IS s e m i c o n d u c t o r 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    OCR Scan     		RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS PDF