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    RFG4 Price and Stock

    Essentra Components RFG-40MO

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    onsemi RFG40N10

    MOSFET N-CH 100V 40A TO247-3
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    Essentra Components RFG-40MA

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    Texas Instruments UC3854DWTR-FG4

    IC PFC CTR AVERAGE 200KHZ 16SOIC
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    DigiKey UC3854DWTR-FG4 Reel 2,000
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    Omega Engineering SRFG-436/5-230V

    FLEXIBLE SILICONE RUBBER FIBERGLASS INSULATED HEATERS - Bulk (Alt: SRFG-436/5-230V)
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    RFG4 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFG40N10 Fairchild Semiconductor 40 A, 100 V, 0.040 ohm, N-Channel Power MOSFET Original PDF
    RFG40N10 Intersil 40A, 100V, 0.040 ?, N-Channel Power MOSFETs Original PDF
    RFG40N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG40N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG40N10LE Fairchild Semiconductor 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFET Original PDF
    RFG40N10LE Harris Semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs Original PDF
    RFG40N10LE Intersil 40A, 100V, 0.040 ?, Logic Level N-Channel Power MOSFETs Original PDF
    RFG45N06 Fairchild Semiconductor 45A, 60V, 0.028 Ohm, N-Channel Power MOSFET Original PDF
    RFG45N06 Fairchild Semiconductor 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFG45N06 Intersil 45A, 60V, 0.028 ?, N-Channel Power MOSFETs Original PDF
    RFG45N06LE Harris Semiconductor 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF

    RFG4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP40N10

    Abstract: No abstract text available
    Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 RFP40N10

    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L

    40n10le

    Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L

    tt 4458

    Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET

    RFP45N06

    Abstract: AN7254 AN7260 RF1S45N06 RF1S45N06SM RF1S45N06SM9A RFG45N06 rfg4
    Text: RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM S E M I C O N D U C T O R 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 45A, 60V SOURCE DRAIN GATE • rDS ON = 0.028Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM O-247 175oC RFP45N06 AN7254 AN7260 RF1S45N06 RF1S45N06SM RF1S45N06SM9A RFG45N06 rfg4

    RFP40N10

    Abstract: F1S40N10 F1S40N AN9321 RF1S40N10 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334
    Text: RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 175oC RFP40N10 F1S40N10 F1S40N AN9321 RF1S40N10 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334

    tt 4458

    Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456

    40n10le

    Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10

    Untitled

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM

    f40n10le

    Abstract: No abstract text available
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM f40n10le

    RF1S45N06LE

    Abstract: RF1S45N06LESM RF1S45N06LESM9A RFG45N06LE RFP45N06LE F45N06LE 45N06LE
    Text: S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    Original     		PDF RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 175oC 1-800-4-HARRIS RF1S45N06LE RF1S45N06LESM9A RFG45N06LE RFP45N06LE F45N06LE 45N06LE

    F1S40N10

    Abstract: F1S40N RFP40N10 TA9846
    Text: RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM S E M I C O N D U C T O R 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 RF1S40N10SM F1S40N10 F1S40N RFP40N10 TA9846

    RFP40N10

    Abstract: AN9321 AN9322 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334 F1S40N10
    Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 175oC RFP40N10 AN9321 AN9322 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334 F1S40N10

    F40N10LE

    Abstract: FP40N10L FG40N10L
    Text: inter«! RFG40N10LE, RFP40N10LE, RF1S40N10LESM D a ta S h e e t 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM TA49163. RF1S40N10LESM AN7254 AN7260. F40N10LE FP40N10L FG40N10L

    RFP45N06

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. 45CTION RFP4SN06, 75BVDss RFP45N06

    655E-6

    Abstract: fp45n ppm pspice 136E3 518E-7
    Text: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG45N06 RFP45N06 O-220AB O-247 RFG45N06, FP45N06 15E-5) 25E-9 1E-30 12E-3 655E-6 fp45n ppm pspice 136E3 518E-7

    F1S45N06

    Abstract: MOSFET S1A M n10 ece
    Text: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM O-247 2E-13 86E-3 26E-3 90E-6 07E-9 F1S45N06 MOSFET S1A M n10 ece

    262E-9

    Abstract: No abstract text available
    Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 33e-3 00e-5) 98e-3 38e-6) 262E-9

    F1S40N10

    Abstract: 40N10 TA9846 rfp40n10
    Text: HARRIS S E M I C O N D U C T O R RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 040i2 AN7254 AN7260. F1S40N10 40N10 TA9846 rfp40n10

    Untitled

    Abstract: No abstract text available
    Text: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG45N06LE, RFP45N06LE, RF1S45N06LESM TA49177. 028i2 TB334 94e-4 94e-7) 70e-3 17e-5)

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n

    rfp40n

    Abstract: 40n10
    Text: RFG40N10 RFP40N10 ¡ 2 H A R R IS August 1991 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package T O -22 0 A B • 4 0 A, 100V TOP VIEW • rDS(on) = 0 .0 4 0 n • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited


    OCR Scan     		PDF RFG40N10 RFP40N10 RFP40N10 RFG40N10, FP40N rfp40n 40n10

    40N10

    Abstract: RFP40N1Q F1S40N
    Text: RFG40N10, RFP40N10, RF1S40N10SM î n t e f s il D ata S h e e t J u ly 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 AN7260. 40N10 RFP40N1Q F1S40N

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 45A,60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 26E-3 90E-6 07E-9 72E-8) 93E-1 13E-4TRS2