Untitled
Abstract: No abstract text available
Text: Si7617DN www.vishay.com Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) d, g 0.0123 at VGS = -10 V -35 0.0222 at VGS = -4.5 V -35 VDS (V) -30 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 20.5 nC
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Original
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Si7617DN
Si7617DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
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SiS430DN
SiS430DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiR402DP
2002/95/EC
SiR402DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiR410DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
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SiR410DP
SiR410DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiR402DP
2002/95/EC
SiR402DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7114ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 35 0.0098 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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Original
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Si7114ADN
Si7114ADN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
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SiS432DN
SiS432DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiR402DP
2002/95/EC
SiR402DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiS454DN
2002/95/EC
SiS454DN-T1-GE3
11-Mar-11
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PDF
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SiS454
Abstract: SiS454DN
Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiS454DN
2002/95/EC
SiS454DN-T1-GE3
18-Jul-08
SiS454
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiS424DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0064 at VGS = 10 V 35 0.0089 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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Original
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SiS424DN
SiS424DN-T1-GE3
11-Mar-11
|
PDF
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SIS456DN
Abstract: No abstract text available
Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiS456DN
2002/95/EC
SiS456DN-T1-GE3
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
|
SiS434DN
2002/95/EC
SiS434DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Si7114ADN
Abstract: Si7114ADN-T1-GE3
Text: New Product Si7114ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 35 0.0098 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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Original
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Si7114ADN
Si7114ADN-T1-GE3
11-Mar-11
|
PDF
|
|
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Untitled
Abstract: No abstract text available
Text: SiR410DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
|
SiR410DP
SiR410DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
|
Original
|
SiS430DN
SiS430DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiS456DN
2002/95/EC
SiS456DN-T1-GE3
11-Mar-11
|
PDF
|
S-8265
Abstract: No abstract text available
Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
|
SiS430DN
SiS430DN-T1-GE3
11-Mar-11
S-8265
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
|
SiS432DN
SiS432DN-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
|
SiS434DN
2002/95/EC
SiS434DN-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiR410DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
|
SiR410DP
SiR410DP-T1-GE3
11-Mar-11
|
PDF
|
SiR402DP
Abstract: SiR402DP-T1-GE3
Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiR402DP
2002/95/EC
SiR402DP-T1-GE3
18-Jul-08
|
PDF
|
IN4149
Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Text: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose
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OCR Scan
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1N4149,
1N4151,
1N4154
1N4446,
1N4447,
1N4448
1N4449
DO-35
1N4149
1N41S1
IN4149
IN4154
DIODe IN4446
1N4446
in4448
4N* diode
1N4447
LN4149
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PDF
|
diode T 3512
Abstract: AR3500 AR3512
Text: AR3500 thru AR3512 35 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 35 Amperes 5VM5EMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility
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OCR Scan
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AR3500
AR3512
UL94V-0
diode T 3512
AR3512
|
PDF
|
