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Vishay Siliconix SIS454DN-T1-GE3 MOSFET N-CH 20V 35A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS454DN-T1-GE3	Cut Tape	7,459		1	1 $1.53 10 $0.967 100 $1.53 1000 $0.46088 10000 $0.46088	Buy Now
	SIS454DN-T1-GE3	Digi-Reel	7,459		1	1 $1.53 10 $0.967 100 $1.53 1000 $0.46088 10000 $0.46088	Buy Now
	SIS454DN-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.40423	Buy Now
Bristol Electronics	SIS454DN-T1-GE3		1,000		6	1 - 10 $0.9375 100 $0.3516 1000 $0.2625 10000 $0.2625	Buy Now
Quest Components	SIS454DN-T1-GE3		800			1 $1.25 10 $1.25 100 $0.375 1000 $0.325 10000 $0.325	Buy Now
	SIS454DN-T1-GE3		800			1 $1.25 10 $1.25 100 $0.375 1000 $0.325 10000 $0.325	Buy Now
New Advantage Corporation	SIS454DN-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.4662	Buy Now
Vishay Intertechnologies SIS454DN-T1-GE3 Trans MOSFET N-CH 20V 25A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS454DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS454DN-T1-GE3	Reel	6,000	16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.3625	Buy Now
Mouser Electronics	SIS454DN-T1-GE3		19,701			1 $1.2 10 $0.811 100 $0.565 1000 $0.418 10000 $0.362	Buy Now
Newark	SIS454DN-T1-GE3	Reel	6,000		3,000	1 $0.363 10 $0.363 100 $0.363 1000 $0.363 10000 $0.363	Buy Now
	SIS454DN-T1-GE3	Bulk	2,298		1	1 $1.05 10 $0.872 100 $0.65 1000 $0.539 10000 $0.539	Buy Now
Quest Components	SIS454DN-T1-GE3		1,720			1 $1.25 10 $1.25 100 $0.375 1000 $0.325 10000 $0.325	Buy Now
	SIS454DN-T1-GE3		1,720			1 $1.25 10 $1.25 100 $0.375 1000 $0.325 10000 $0.325	Buy Now
TTI	SIS454DN-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.363	Buy Now

TME	SIS454DN-T1-GE3				1	1 $0.91 10 $0.82 100 $0.65 1000 $0.61 10000 $0.61	Get Quote
EBV Elektronik	SIS454DN-T1-GE3			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay BLH SIS454DN-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIS454DN-T1-GE3		2,150		6	1 - 10 $0.9375 100 $0.3516 1000 $0.2625 10000 $0.2438	Buy Now

SIS454 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIS454DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A 1212-8 PPAK		Original	PDF

SIS454 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiS454DN 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiS454DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiS454DN AN609, 19-May-10	PDF
Untitled Abstract: No abstract text available Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS454DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiS454DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 11-Mar-11	PDF
SiS454 Abstract: SiS454DN Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 18-Jul-08 SiS454	PDF
Untitled Abstract: No abstract text available Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
TSOP6 Abstract: SIS454DN-T1-GE3 Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS454DN 2002/95/EC SiS454DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP6	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	VMN-PT0105-1007	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF

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SIS454 Datasheets (1)

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