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    RL 12V 200 OHM Search Results

    RL 12V 200 OHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    RL 12V 200 OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4393

    Abstract: marking 18w sot23 sot-23 18w 4392 SST4393 4391 jfet jfet transistor 2n4391 marking N03 TO92 to92 MARKING N02 2N4391
    Text: N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N4391 2N4393 PN4391 PN4393 SST4391 SST4393 2N4391) 100pA 10VAC -65oC marking 18w sot23 sot-23 18w 4392 SST4393 4391 jfet jfet transistor 2n4391 marking N03 TO92 to92 MARKING N02 2N4391

    18W SOT23

    Abstract: marking 18w sot23
    Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N4391 2N4393 PN4391 PN4393 SST4391 SST4393 2N4391) 100pA 10VAC -65oC 18W SOT23 marking 18w sot23

    2N4391

    Abstract: SST4391 marking 18w sot23 4392 2N4393 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01
    Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N4391 2N4393 PN4391 PN4393 SST4391 SST4393 2N4391) 100pA 10VAC -65oC 2N4391 SST4391 marking 18w sot23 4392 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
    Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
    Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334 AN9322

    Untitled

    Abstract: No abstract text available
    Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using


    Original     		PDF RF1K49092

    1E14

    Abstract: 2E12 FSS230R4 JANSR2N7400
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7400 FSS230R4 1E14 2E12 FSS230R4 JANSR2N7400

    relay 12v 100A

    Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7396 FSL230R4 relay 12v 100A 1E14 2E12 FSL230R4 JANSR2N7396

    MOSFET S1A

    Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
    Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF3V49092, RF3S49092SM 0A/10A, MOSFET S1A datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322

    kp-98

    Abstract: Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
    Text: RF1K49211 Data Sheet August 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET • 7A, 12V • rDS ON = 0.020Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature


    Original     		PDF RF1K49211 RF1K49211 kp-98 Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4921196 TB334

    MO-169AB

    Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
    Text: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in


    Original     		PDF RF3S49092SM 0A/10A, MO-169AB RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406

    1E14

    Abstract: 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 Rad Hard in Fairchild for MOSFET
    Text: FSL923A0D, FSL923A0R Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL923A0D, FSL923A0R -200V, O-205AF 254mm) FSL923A0R 1E14 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R1 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    1E14

    Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
    Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSYA250D, FSYA250R 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3

    1E14

    Abstract: 2E12 FSF9250R4 JANSR2N7404
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7404 FSF9250R4 -200V, 1E14 2E12 FSF9250R4 JANSR2N7404

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7404 FSF9250R4 -200V,

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7400 FSS230R4

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    RF1K49093

    Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K49093 AN9321 AN9322 MS-012AA RF1K4909396 TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49090 RF1K4909096 TB334
    Text: RF1K49090 Data Sheet August 1999 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET Power MOSFET File Number 3985.6 Features • 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49090 AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49090 RF1K4909096 TB334

    RF1K4909396

    Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K4909396 delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs


    OCR Scan     		PDF JANSR2N7404 -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;